사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 11.4A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 24mOhm @ 9.1A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 50 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1350 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta), 5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
개요
Description
The SI4435DDY-T1-GE3 is a N-channel MOSFET transistor manufactured by Vishay Siliconix. It is designed for a variety of applications, including power management and load switching, commonly utilized in consumer electronics and computer systems. This MOSFET features advanced trench technology that provides extremely low on-resistance, making it highly efficient for power conversion. The device is packaged in a PowerPAK SO-8, which offers a compact form factor with excellent thermal performance and high current handling capabilities.
Key specifications include a drain-source voltage (V_ds) of 30V and a continuous drain current (I_d) of up to 13.2A, with a maximum power dissipation of approximately 2.5W. The SI4435DDY-T1-GE3 operates efficiently with a gate-source voltage (V_gs) range of ±20V. It is ideal for applications requiring fast switching and low power loss. The MOSFET is also known for its robust construction, which ensures reliability even under demanding operational conditions. It is RoHS compliant, reflecting its adherence to environmental standards.
Key specifications include a drain-source voltage (V_ds) of 30V and a continuous drain current (I_d) of up to 13.2A, with a maximum power dissipation of approximately 2.5W. The SI4435DDY-T1-GE3 operates efficiently with a gate-source voltage (V_gs) range of ±20V. It is ideal for applications requiring fast switching and low power loss. The MOSFET is also known for its robust construction, which ensures reliability even under demanding operational conditions. It is RoHS compliant, reflecting its adherence to environmental standards.
Equivalent
The SI4435DDY-T1-GE3 is a P-channel MOSFET. Equivalent products include:
1. IRF5305 from Infineon Technologies
2. FDS6679AZ from ON Semiconductor
3. AO3407 from Alpha & Omega Semiconductor
4. BSS84 from NXP Semiconductors
These equivalents have similar characteristics such as voltage and current ratings, but always verify specific parameters to ensure compatibility with your application.
1. IRF5305 from Infineon Technologies
2. FDS6679AZ from ON Semiconductor
3. AO3407 from Alpha & Omega Semiconductor
4. BSS84 from NXP Semiconductors
These equivalents have similar characteristics such as voltage and current ratings, but always verify specific parameters to ensure compatibility with your application.
Features
The SI4435DDY-T1-GE3 is a P-channel MOSFET manufactured by Vishay Siliconix. Key features include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of -30V and a continuous drain current (I_D) of -9.6A at 25°C.
2. R_DS(on): The on-resistance is typically 20 mΩ at a gate-source voltage (V_GS) of -10V.
3. Package: It is available in the PowerPAK SO-8 package, which is known for its compact size and efficient thermal performance.
4. Thermal Resistance: The device offers good thermal resistance characteristics, enhancing its reliability in applications.
5. Gate Charge: Low gate charge of typically 9.0 nC, which allows for efficient switching performance.
6. Applications: Commonly used in power management applications, load switching, and as a part of DC-DC converters.
Overall, the SI4435DDY-T1-GE3 is designed for applications requiring efficient power switching with minimal power loss.
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of -30V and a continuous drain current (I_D) of -9.6A at 25°C.
2. R_DS(on): The on-resistance is typically 20 mΩ at a gate-source voltage (V_GS) of -10V.
3. Package: It is available in the PowerPAK SO-8 package, which is known for its compact size and efficient thermal performance.
4. Thermal Resistance: The device offers good thermal resistance characteristics, enhancing its reliability in applications.
5. Gate Charge: Low gate charge of typically 9.0 nC, which allows for efficient switching performance.
6. Applications: Commonly used in power management applications, load switching, and as a part of DC-DC converters.
Overall, the SI4435DDY-T1-GE3 is designed for applications requiring efficient power switching with minimal power loss.
Pinout
The SI4435DDY-T1-GE3 is a PowerTrench MOSFET in a DFN-5 (5-pin) package.
Pin Functions:
1. Gate (G) – Controls the MOSFET switching.
2. Drain (D1, D2, D3) – Three pins internally connected to the drain for lower resistance and better thermal performance.
4. Source (S) – Output/return path.
Key Features:
- N-channel MOSFET
- 30V drain-source voltage (VDS)
- Low on-resistance (RDS(on)) for efficient power handling.
Used in power management, DC-DC converters, and load switching. Compact DFN-5 package aids in space-constrained designs.
Pin Functions:
1. Gate (G) – Controls the MOSFET switching.
2. Drain (D1, D2, D3) – Three pins internally connected to the drain for lower resistance and better thermal performance.
4. Source (S) – Output/return path.
Key Features:
- N-channel MOSFET
- 30V drain-source voltage (VDS)
- Low on-resistance (RDS(on)) for efficient power handling.
Used in power management, DC-DC converters, and load switching. Compact DFN-5 package aids in space-constrained designs.
Manufacturer
The SI4435DDY-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer known for producing discrete semiconductors, passive electronic components, and integrated circuits. These components are crucial in various electronic devices and systems across a wide range of industries, including automotive, industrial, computing, telecommunications, consumer electronics, and healthcare. Vishay's product offerings include transistors, diodes, rectifiers, capacitors, resistors, inductors, optoelectronics, and more, serving as fundamental building blocks in electronic circuit design. The company is recognized for its innovation and quality, providing solutions that enhance performance, efficiency, and reliability in electronic systems worldwide.
Application
The SI4435DDY-T1-GE3 is a MOSFET used in various electronic applications, primarily for switching and amplification. Key application areas include power management systems, DC-DC converters, motor drives, and load switches. It is also used in consumer electronics, telecommunications, and automotive applications, where efficient power handling and control are crucial. Its compact design and excellent thermal performance make it suitable for space-constrained environments.
Package
The SI4435DDY-T1-GE3 comes in a PowerPAK® SO-8 package. This compact surface-mount design is optimized for high-power applications, offering efficient thermal performance and space-saving benefits. It is commonly used in power management and switching circuits.
