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SI4467DY-BAA005AP
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제조업체온세미
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제조업체 부품 #SI4467DY-BAA005AP
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재고17610
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
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개요
Description
The SI4467DY-BAA005AP is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in various electronic applications for switching and amplification. This particular model is part of Vishay’s automotive-grade MOSFETs, designed to meet the rigorous demands of automotive environments.
Key specifications include:
- Voltage Rating: It has a drain-source voltage (V_DS) rating, typically around 30V.
- Current Capacity: It can handle a continuous drain current (I_D) of several amperes, often around 13A, depending on the configuration and heat dissipating conditions.
- R_DS(on): This refers to the on-state resistance, which is low, ensuring efficient operation and minimal power loss.
- Package Type: The SI4467DY is commonly available in PowerPAK® SO-8, which is a compact package ideal for space-constrained applications.
Applications often include automotive systems such as power management, DC-DC converters, and motor drives. Its robust design ensures reliability in high-temperature and high-stress conditions typical in automotive usage.
Key specifications include:
- Voltage Rating: It has a drain-source voltage (V_DS) rating, typically around 30V.
- Current Capacity: It can handle a continuous drain current (I_D) of several amperes, often around 13A, depending on the configuration and heat dissipating conditions.
- R_DS(on): This refers to the on-state resistance, which is low, ensuring efficient operation and minimal power loss.
- Package Type: The SI4467DY is commonly available in PowerPAK® SO-8, which is a compact package ideal for space-constrained applications.
Applications often include automotive systems such as power management, DC-DC converters, and motor drives. Its robust design ensures reliability in high-temperature and high-stress conditions typical in automotive usage.
Equivalent
The SI4467DY-BAA005AP is a N-channel MOSFET. Equivalent products typically include similar N-channel MOSFETs with comparable voltage and current ratings. Potential equivalents are:
1. NXP PSMN7R0-40YS
2. Vishay Si4470EY
3. Infineon IPD50N06S4-05
4. ON Semiconductor FDP6035AL
Ensure to compare specific electrical characteristics and packaging to confirm compatibility.
1. NXP PSMN7R0-40YS
2. Vishay Si4470EY
3. Infineon IPD50N06S4-05
4. ON Semiconductor FDP6035AL
Ensure to compare specific electrical characteristics and packaging to confirm compatibility.
Features
The SI4467DY-BAA005AP is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (V_ds) of 30V, making it suitable for a wide range of power applications.
2. Current Rating: It can handle a continuous drain current (I_d) of up to 13.5A, allowing for substantial power throughput.
3. Low On-Resistance: With a low on-resistance (R_ds(on)) of approximately 0.0105Ω, it minimizes power loss and improves efficiency in switching applications.
4. Package Type: The MOSFET is housed in a standard SO-8 package, offering ease of integration into printed circuit boards (PCBs) with minimal space requirements.
5. Thermal Efficiency: Designed with efficient thermal management characteristics to maintain reliability under high-load conditions.
6. Applications: Ideal for use in DC-DC converters, load switching operations, and power management in various electronic devices.
These features make the SI4467DY-BAA005AP a versatile and efficient choice for power management in electronic circuits.
1. Voltage Rating: It typically supports a drain-source voltage (V_ds) of 30V, making it suitable for a wide range of power applications.
2. Current Rating: It can handle a continuous drain current (I_d) of up to 13.5A, allowing for substantial power throughput.
3. Low On-Resistance: With a low on-resistance (R_ds(on)) of approximately 0.0105Ω, it minimizes power loss and improves efficiency in switching applications.
4. Package Type: The MOSFET is housed in a standard SO-8 package, offering ease of integration into printed circuit boards (PCBs) with minimal space requirements.
5. Thermal Efficiency: Designed with efficient thermal management characteristics to maintain reliability under high-load conditions.
6. Applications: Ideal for use in DC-DC converters, load switching operations, and power management in various electronic devices.
These features make the SI4467DY-BAA005AP a versatile and efficient choice for power management in electronic circuits.
Pinout
The SI4467DY-BAA005AP is a N-channel MOSFET transistor used for switching and amplification in various electronic circuits. It typically comes in a PowerPAK SO-8 package and has the following pin configuration:
1. Drain (D1) - Main terminal for current input/output.
2. Source (S1) - Main terminal for current input/output, directly connected to the substrate.
3. Gate (G1) - Terminal for controlling the MOSFET's operation.
4. Drain (D2) - Same function as D1; usually internally connected.
5. Source (S2) - Same function as S1; usually internally connected.
6. Gate (G2) - Same function as G1; usually internally connected.
7. Drain (D3) - Same function as D1; usually internally connected.
8. Source (S3) - Same function as S1; usually internally connected.
The functions of these pins are typical for a MOSFET, where the Gate controls the flow of current between the Drain and Source. The SI4467DY is often used in power management applications. For precise pin assignments and detailed specifications, consulting the official datasheet is recommended.
1. Drain (D1) - Main terminal for current input/output.
2. Source (S1) - Main terminal for current input/output, directly connected to the substrate.
3. Gate (G1) - Terminal for controlling the MOSFET's operation.
4. Drain (D2) - Same function as D1; usually internally connected.
5. Source (S2) - Same function as S1; usually internally connected.
6. Gate (G2) - Same function as G1; usually internally connected.
7. Drain (D3) - Same function as D1; usually internally connected.
8. Source (S3) - Same function as S1; usually internally connected.
The functions of these pins are typical for a MOSFET, where the Gate controls the flow of current between the Drain and Source. The SI4467DY is often used in power management applications. For precise pin assignments and detailed specifications, consulting the official datasheet is recommended.
Manufacturer
The SI4467DY-BAA005AP is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company produces a wide range of products, including diodes, MOSFETs, optoelectronics, resistors, inductors, and capacitors, which are used in various industries such as automotive, industrial, consumer electronics, telecommunications, and computing. Vishay is known for its broad portfolio of components that support efficiency and reliability in electronic circuits.
Application
The SI4467DY-BAA005AP is a N-channel MOSFET transistor known for its efficiency in switching applications. It is commonly used in power management applications, including DC-DC converters, load switches, and motor drives. Its low on-resistance and fast switching capabilities make it suitable for efficient power delivery in computing and telecommunications equipment. Additionally, the SI4467DY is often utilized in automotive systems, where reliable power distribution and energy efficiency are critical. Its compact package and performance characteristics make it well-suited for use in portable electronics and consumer devices where space-saving and thermal efficiency are important considerations.
Package
The SI4467DY-BAA005AP is a MOSFET from Vishay Siliconix, housed in a SO-8 package type.
