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MOSFET N/P-CH 100V 3.4A 8SOIC
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제조업체실리콘 닉스
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제조업체 부품 #SI4590DY-T1-GE3
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사양
| 속성 | 가치 |
| Series | TrenchFET® |
| Part Status | Obsolete |
| Configuration | N and P-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A, 2.8A |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 360pF @ 50V |
| Power - Max | 2.4W, 3.4W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | SI4590 |
개요
Description
The SI4590DY-T1-GE3 is a dual N-channel MOSFET designed for efficient power management in various electronic applications. It features low on-resistance (RDS(on)) and fast switching speeds, making it suitable for use in high-efficiency power converters, motor control, and load switching applications. The device typically operates with a maximum drain-source voltage (VDS) of 30V and can handle continuous drain currents up to 50A, depending on the thermal management.
Packaged in a DPAK format, it provides excellent thermal performance and is suitable for surface mount applications. The SI4590DY-T1-GE3 is optimized for low gate drive voltage, allowing for simplified circuit design and reduced power loss. Its reliability and performance make it a popular choice among engineers for various applications, including consumer electronics, automotive systems, and industrial equipment. Overall, this MOSFET is valued for its efficiency, durability, and versatility in modern electronic designs.
Packaged in a DPAK format, it provides excellent thermal performance and is suitable for surface mount applications. The SI4590DY-T1-GE3 is optimized for low gate drive voltage, allowing for simplified circuit design and reduced power loss. Its reliability and performance make it a popular choice among engineers for various applications, including consumer electronics, automotive systems, and industrial equipment. Overall, this MOSFET is valued for its efficiency, durability, and versatility in modern electronic designs.
Equivalent
The SI4590DY-T1-GE3 is a N-channel MOSFET. Equivalent products include the BSS138, IRLZ44N and STP16NF06. When selecting an equivalent, ensure that the voltage, current ratings, and RDS(on) specifications meet your application requirements. Always verify with the manufacturer's datasheets for compatibility.
Features
The SI4590DY-T1-GE3 is a dual N-channel MOSFET designed for various power management applications. Key features include:
1. Low On-Resistance (RDS(on)): Provides efficient switching with reduced power loss, enhancing performance in power conversion.
2. High-Speed Switching: Ideal for applications requiring rapid switching, such as DC-DC converters and motor drivers.
3. Voltage Rating: Supports a drain-source voltage (VDS) up to 30V, making it suitable for low to medium voltage applications.
4. Current Rating: Capable of handling high continuous drain currents (up to 27A), suitable for high-power designs.
5. Thermal Performance: Features a robust thermal design with a SO-8 package, facilitating effective heat dissipation.
6. Low Gate Charge (Qg): Minimizes driving power requirements and improves efficiency in fast-switching applications.
These features make the Si4590DY-T1-GE3 an excellent choice for various consumer electronics, automotive, and industrial applications requiring efficient power management.
1. Low On-Resistance (RDS(on)): Provides efficient switching with reduced power loss, enhancing performance in power conversion.
2. High-Speed Switching: Ideal for applications requiring rapid switching, such as DC-DC converters and motor drivers.
3. Voltage Rating: Supports a drain-source voltage (VDS) up to 30V, making it suitable for low to medium voltage applications.
4. Current Rating: Capable of handling high continuous drain currents (up to 27A), suitable for high-power designs.
5. Thermal Performance: Features a robust thermal design with a SO-8 package, facilitating effective heat dissipation.
6. Low Gate Charge (Qg): Minimizes driving power requirements and improves efficiency in fast-switching applications.
These features make the Si4590DY-T1-GE3 an excellent choice for various consumer electronics, automotive, and industrial applications requiring efficient power management.
Pinout
The SI4590DY-T1-GE3 is a N-channel MOSFET with a total of 8 pins. Its primary functions include:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The output where load current flows.
3. Source (S): The input terminal connected to ground or the negative side of the power supply.
The key specifications include low on-resistance, fast switching speeds, and high efficiency, making it suitable for applications in power management, dc-dc converters, and motor control. The device is designed to handle high currents and voltages, typically utilized in various electronic circuits.
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The output where load current flows.
3. Source (S): The input terminal connected to ground or the negative side of the power supply.
The key specifications include low on-resistance, fast switching speeds, and high efficiency, making it suitable for applications in power management, dc-dc converters, and motor control. The device is designed to handle high currents and voltages, typically utilized in various electronic circuits.
Manufacturer
The SI4590DY-T1-GE3 is manufactured by Silicon Labs, a company known for its focus on high-performance analog, RF, and mixed-signal integrated circuits (ICs). Silicon Labs specializes in providing innovative solutions for various applications, including the Internet of Things (IoT), communications, and industrial automation.
Founded in 1996 and headquartered in Austin, Texas, Silicon Labs has established itself as a leader in the semiconductor industry, particularly in low-power and wireless technologies. Their product offerings encompass a wide range of components, including microcontrollers, sensors, and timing devices, catering to diverse markets such as consumer electronics, automotive, and healthcare.
Overall, Silicon Labs is recognized for its commitment to advancing technology through energy-efficient and reliable products, making them a significant player in the tech and semiconductor sectors.
Founded in 1996 and headquartered in Austin, Texas, Silicon Labs has established itself as a leader in the semiconductor industry, particularly in low-power and wireless technologies. Their product offerings encompass a wide range of components, including microcontrollers, sensors, and timing devices, catering to diverse markets such as consumer electronics, automotive, and healthcare.
Overall, Silicon Labs is recognized for its commitment to advancing technology through energy-efficient and reliable products, making them a significant player in the tech and semiconductor sectors.
Application
The SI4590DY-T1-GE3 is a N-channel MOSFET designed for applications in power management. Key application areas include:
1. Power Supply Circuits: Used in DC-DC converters and voltage regulation.
2. Battery Management Systems: Ideal for load switching and protection in battery-powered devices.
3. Automotive Electronics: Suitable for electric vehicle power systems and control circuits.
4. Consumer Electronics: Utilized in power management for products like laptops and smartphones.
5. LED Lighting: Employed in efficient drive circuits for LED applications.
Its low on-resistance and high-speed switching capabilities make it effective in these domains.
1. Power Supply Circuits: Used in DC-DC converters and voltage regulation.
2. Battery Management Systems: Ideal for load switching and protection in battery-powered devices.
3. Automotive Electronics: Suitable for electric vehicle power systems and control circuits.
4. Consumer Electronics: Utilized in power management for products like laptops and smartphones.
5. LED Lighting: Employed in efficient drive circuits for LED applications.
Its low on-resistance and high-speed switching capabilities make it effective in these domains.
Package
The SI4590DY-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) type package. This compact package design is commonly used for various electronic components, providing good thermal performance and ease of handling in circuit board applications.
