사양
| 속성 | 가치 |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 8A |
| Rds On(Max) @ Id Vgs | 19.2mOhm @ 8.3A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 62nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 1945pF @ 10V |
| Power - Max | 3.1W |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
개요
Description
SI4943CDY-T1-GE3 is a Vishay Siliconix power MOSFET (N-channel, enhancement mode) used for high-efficiency switching in power electronics. The DY suffix indicates a D²PAK surface‑mount package; T1 denotes tape‑and‑reel packaging, and GE3 marks the RoHS/lead-free grade and lot code. It’s suited for DC‑DC converters, motor drivers, and load-switch applications, offering low on-resistance and solid current capability. For exact electrical specs (Vds, Id, Rds(on), gate charge, switching characteristics), consult the latest datasheet for the CDY variant.
Features
SI4943CDY-T1-GE3 is a power MOSFET. Typical features (family-level; check datasheet for exact values and your package):
- N-channel enhancement-mode MOSFET
- VDS around 30 V (DC)
- Very low RDS(on): a few milliohms (typical) at VGS = 10 V; still low at 4.5 V
- High current capability (several amps, depending on package)
- Logic-level gate drive (low VGS threshold)
- Fast switching with low gate charge
- Suitable for DC-DC converters, high/low-side switches, load switching
- RoHS compliant; wide operating temp range (roughly -55°C to +150°C)
- Surface-mount packaging (options in literature include SO-8/D2PAK variants)
Note: exact RDS(on), ID, and package can vary by revision and packaging. Refer to the official datasheet for precise electrical specs, packaging, and thermal details.
- N-channel enhancement-mode MOSFET
- VDS around 30 V (DC)
- Very low RDS(on): a few milliohms (typical) at VGS = 10 V; still low at 4.5 V
- High current capability (several amps, depending on package)
- Logic-level gate drive (low VGS threshold)
- Fast switching with low gate charge
- Suitable for DC-DC converters, high/low-side switches, load switching
- RoHS compliant; wide operating temp range (roughly -55°C to +150°C)
- Surface-mount packaging (options in literature include SO-8/D2PAK variants)
Note: exact RDS(on), ID, and package can vary by revision and packaging. Refer to the official datasheet for precise electrical specs, packaging, and thermal details.
Pinout
SI4943CDY-T1-GE3 is a 6‑pin device (dual N‑channel MOSFET). The six pins provide the two FETs’ gates, drains and sources. Typical SOT‑23‑6 pinout (confirm with the datasheet):
1 = G1, 2 = D1, 3 = S1, 4 = S2, 5 = D2, 6 = G2.
(Also check the manufacturer datasheet for package-specific pin assignment and any exposed pad details.)
1 = G1, 2 = D1, 3 = S1, 4 = S2, 5 = D2, 6 = G2.
(Also check the manufacturer datasheet for package-specific pin assignment and any exposed pad details.)
Manufacturer
The SI4943CDY-T1-GE3 is manufactured by Vishay Siliconix, a product brand/division of Vishay Intertechnology. Vishay is a global, publicly traded electronics components company (headquartered in Malvern, Pennsylvania, USA) that designs and manufactures discrete semiconductors (power MOSFETs, diodes, ICs) and passive components (resistors, capacitors, inductors).
Package
6-pin SOT-23 (SC‑74A) package.
