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SI7101DN-T1-GE3

Name: SI7101DN-T1-GE3
Rating: 4.8 (15 reviews)

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MOSFET P-CH 30V 35A PPAK 1212-8

제조업체실리콘 닉스
제조업체 부품 #SI7101DN-T1-GE3
데이터시트 SI7101DN-T1-GE3 DataSheet
패키지 PowerPAK-1212
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사양

속성	가치
Package / Case	Tape & Reel (TR),Cut Tape (CT)
Series	TrenchFET®
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain(Id) @ 25°C	35A (Tc)
Drive Voltage(Max Rds On Min Rds On)	4.5V, 10V
Rds On(Max) @ Id Vgs	7.2mOhm @ 15A, 10V
Vgs(th)(Max) @ Id	2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	102 nC @ 10 V
Vgs(Max)	±25V
Input Capacitance(Ciss)(Max) @ Vds	3595 pF @ 15 V
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8

개요

Description

The SI7101DN-T1-GE3 is a N-channel MOSFET from Vishay, designed for high-efficiency power applications. Key features include:
- Voltage Rating: 30V
- Current Rating: 60A (pulsed)
- Low On-Resistance (RDS(on)): 1.8mΩ (max at 10V VGS)
- Fast Switching: Optimized for high-speed performance.
- Package: PowerPAK® SO-8, offering compact size with excellent thermal performance.
Ideal for DC-DC converters, motor control, and load switching in automotive, industrial, and consumer electronics. Its low RDS(on) minimizes conduction losses, improving efficiency.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the SI7101DN-T1-GE3 (a Vishay/Siliconix N-channel MOSFET) include:
- IRLML6401TRPBF (Infineon)
- DMN1019USN-7 (Diodes Inc.)
- BSS138 (NXP/Infineon)
- 2N7002 (Various manufacturers)
These are similar in specs (30V, 3A, SOT-23 package). Verify exact parameters for your application.

Features

The SI7101DN-T1-GE3 is a N-channel MOSFET with the following key features:
- Voltage Rating: 30V
- Current Rating: 6.3A (continuous)
- Low On-Resistance (RDS(on)): 22mΩ (max) @ VGS = 10V
- Gate Threshold Voltage (VGS(th)): 1V (typical)
- Fast Switching: Optimized for high-efficiency power applications
- Package: PowerPAK® SO-8 (compact, thermally enhanced)
- AEC-Q101 Qualified: Suitable for automotive applications
- Low Gate Charge (Qg): Enhances switching performance
Ideal for DC-DC converters, motor control, and power management in automotive and industrial systems.

Pinout

The SI7101DN-T1-GE3 is a 4-pin dual N-channel MOSFET in a PowerPAK® SO-8 package.
Pin Functions:
1. Pin 1 (Gate 1): Controls the first N-channel MOSFET.
2. Pin 2 (Source 1): Source terminal for the first MOSFET.
3. Pin 3 (Source 2): Source terminal for the second MOSFET.
4. Pin 4 (Gate 2): Controls the second N-channel MOSFET.
Key Features:
- Dual N-channel design for compact power switching.
- Low on-resistance (RDS(on)) for efficient performance.
- Optimized for high-speed switching in power management applications.
Commonly used in DC-DC converters, load switches, and motor control.

Package

The SI7101DN-T1-GE3 is a MOSFET in a PowerPAK® SO-8 package. This compact surface-mount design offers efficient thermal performance and is commonly used in power management applications. The package dimensions are industry-standard SO-8, with enhanced power dissipation capabilities.