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SI7113ADN-T1-GE3
+BOMMOSFET P-CH 100V 10.8A PPAK
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제조업체실리콘 닉스
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제조업체 부품 #SI7113ADN-T1-GE3
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사양
| 속성 | 가치 |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 10.8A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 132mOhm @ 3.8A, 10V |
| Vgs(th)(Max) @ Id | 2.6V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 16.5 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 515 pF @ 50 V |
| Power Dissipation (Max) | 27.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
개요
Description
The SI7113ADN-T1-GE3 is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. Manufactured by Vishay Siliconix, it is commonly used in circuits requiring fast switching and high efficiency, such as DC-DC converters, load switches, and power management systems.
Key features of the SI7113ADN-T1-GE3 include its N-channel design, which allows for efficient current flow when activated. It typically offers low on-resistance, enhancing energy efficiency by minimizing power loss during operation. This MOSFET is also packaged in a compact form factor, often the PowerPAK® SO-8, providing a balance between thermal performance and space savings on printed circuit boards.
The device is also designed to handle high current and voltage levels, making it suitable for various industrial, automotive, and consumer electronics applications. Its robustness and reliability are critical in environments demanding consistent performance under varying electrical loads.
Key features of the SI7113ADN-T1-GE3 include its N-channel design, which allows for efficient current flow when activated. It typically offers low on-resistance, enhancing energy efficiency by minimizing power loss during operation. This MOSFET is also packaged in a compact form factor, often the PowerPAK® SO-8, providing a balance between thermal performance and space savings on printed circuit boards.
The device is also designed to handle high current and voltage levels, making it suitable for various industrial, automotive, and consumer electronics applications. Its robustness and reliability are critical in environments demanding consistent performance under varying electrical loads.
Equivalent
The SI7113ADN-T1-GE3 is a MOSFET from Vishay. When looking for equivalent products, consider similar N-channel MOSFETs with matching specifications such as voltage rating, current capacity, RDS(on), and package type. Possible equivalents could be MOSFETs from manufacturers like Infineon, ON Semiconductor, or STMicroelectronics. Always check the datasheets to ensure compatibility in parameters and performance for your specific application.
Features
The SI7113ADN-T1-GE3 is a P-channel MOSFET manufactured by Vishay Siliconix. It is designed for applications requiring efficient power management and switching. Key features include:
1. Voltage and Current Ratings: It operates with a maximum drain-source voltage (V_DS) of -20V and a continuous drain current (I_D) of -5.5A, making it suitable for low-voltage applications.
2. R_DS(on) Specifications: The MOSFET offers a low on-resistance (R_DS(on)) of 69 mΩ at a gate-source voltage (V_GS) of -4.5V, which reduces power losses during operation.
3. Package Type: The device is available in a compact PowerPAK® 1212-8 package, providing efficient thermal performance and space-saving advantages.
4. Thermal Performance: It has a junction-to-ambient thermal resistance (R_θJA) of approximately 40°C/W, which aids in effective heat dissipation.
5. Applications: Ideal for battery-powered devices, load switching, and DC-DC converters due to its low power loss and high switching speed.
These features make the SI7113ADN-T1-GE3 a reliable choice for designers looking to optimize power efficiency in compact electronic circuits.
1. Voltage and Current Ratings: It operates with a maximum drain-source voltage (V_DS) of -20V and a continuous drain current (I_D) of -5.5A, making it suitable for low-voltage applications.
2. R_DS(on) Specifications: The MOSFET offers a low on-resistance (R_DS(on)) of 69 mΩ at a gate-source voltage (V_GS) of -4.5V, which reduces power losses during operation.
3. Package Type: The device is available in a compact PowerPAK® 1212-8 package, providing efficient thermal performance and space-saving advantages.
4. Thermal Performance: It has a junction-to-ambient thermal resistance (R_θJA) of approximately 40°C/W, which aids in effective heat dissipation.
5. Applications: Ideal for battery-powered devices, load switching, and DC-DC converters due to its low power loss and high switching speed.
These features make the SI7113ADN-T1-GE3 a reliable choice for designers looking to optimize power efficiency in compact electronic circuits.
Pinout
The SI7113ADN-T1-GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Vishay Siliconix. It is part of the power MOSFET family designed for use in power management applications.
The SI7113ADN-T1-GE3 typically comes in a PowerPAK® SO-8 package, which is a common surface-mount package for power MOSFETs. This package generally has an 8-pin count, but it is important to note that some of these pins might be internally connected or designated for specific purposes such as heat dissipation through a large drain pad.
The primary functions of the SI7113ADN-T1-GE3 include switching and amplification in power conversion, load switching, and other power management tasks in electronic devices. It is designed to handle high currents and voltages efficiently, making it suitable for applications requiring robust and reliable power control. Always refer to the manufacturer's datasheet for detailed specifications and pin configuration.
The SI7113ADN-T1-GE3 typically comes in a PowerPAK® SO-8 package, which is a common surface-mount package for power MOSFETs. This package generally has an 8-pin count, but it is important to note that some of these pins might be internally connected or designated for specific purposes such as heat dissipation through a large drain pad.
The primary functions of the SI7113ADN-T1-GE3 include switching and amplification in power conversion, load switching, and other power management tasks in electronic devices. It is designed to handle high currents and voltages efficiently, making it suitable for applications requiring robust and reliable power control. Always refer to the manufacturer's datasheet for detailed specifications and pin configuration.
Manufacturer
The SI7113ADN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962 and headquartered in Malvern, Pennsylvania, Vishay is known for producing a wide range of products including diodes, MOSFETs, optoelectronics, resistors, inductors, and capacitors. The company serves various industries such as automotive, industrial, computing, consumer electronics, telecommunications, military, aerospace, and medical. Vishay is recognized for its innovation, quality, and broad product portfolio, making it a key player in the electronic components sector.
Application
The SI7113ADN-T1-GE3 is a MOSFET designed for various applications, particularly in power management and switching. Its key application areas include:
1. Power Supply Units: Used in the regulation and conversion of power in AC-DC and DC-DC converters.
2. Motor Drive Circuits: Suitable for driving motors in different types of machinery and consumer electronics.
3. Battery Management Systems: Supports efficient charging and discharging cycles in battery-powered devices.
4. Load Switches: Acts as a switch in electronic loads, ensuring efficient current flow control.
5. Telecommunications Equipment: Enhances power efficiency and management in telecom devices.
These applications benefit from the device's low on-resistance and high efficiency.
1. Power Supply Units: Used in the regulation and conversion of power in AC-DC and DC-DC converters.
2. Motor Drive Circuits: Suitable for driving motors in different types of machinery and consumer electronics.
3. Battery Management Systems: Supports efficient charging and discharging cycles in battery-powered devices.
4. Load Switches: Acts as a switch in electronic loads, ensuring efficient current flow control.
5. Telecommunications Equipment: Enhances power efficiency and management in telecom devices.
These applications benefit from the device's low on-resistance and high efficiency.
Package
The SI7113ADN-T1-GE3 is a MOSFET transistor typically packaged in a compact, surface-mount, PowerPAK 1212-8 package, which is designed for efficient heat dissipation and space-saving on printed circuit boards.
