이미지는 참조용입니다.
SI7129DN-T1-GE3
+BOMMOSFET P-CH 30V 35A PPAK1212-8
-
제조업체실리콘 닉스
-
제조업체 부품 #SI7129DN-T1-GE3
-
재고16210
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 35A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 11.4mOhm @ 14.4A, 10V |
| Vgs(th)(Max) @ Id | 2.8V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 71 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3345 pF @ 15 V |
| Power Dissipation (Max) | 3.8W (Ta), 52.1W (Tc) |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
개요
Description
The SI7129DN-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management in electronic circuits. Manufactured by Vishay Siliconix, this component features advanced TrenchFET technology, offering low on-resistance, which improves performance and reduces power loss. It is primarily used in applications requiring high-speed switching and efficient power conversion, such as DC-DC converters, synchronous rectification, and load switching.
Key specifications of the SI7129DN-T1-GE3 include a drain-source voltage (V_DS) rating of around 30V and a continuous drain current (I_D) capability, making it suitable for medium-power applications. Its compact PowerPAK® 1212-8 package enhances thermal performance and space efficiency, allowing for effective heat dissipation in high-density circuit boards.
The MOSFET's gate-source voltage (V_GS) threshold is compatible with low-voltage drive designs, enabling its integration in battery-operated devices and other sensitive electronics. Overall, the SI7129DN-T1-GE3 is valued for its reliability, efficiency, and adaptability in modern power electronics.
Key specifications of the SI7129DN-T1-GE3 include a drain-source voltage (V_DS) rating of around 30V and a continuous drain current (I_D) capability, making it suitable for medium-power applications. Its compact PowerPAK® 1212-8 package enhances thermal performance and space efficiency, allowing for effective heat dissipation in high-density circuit boards.
The MOSFET's gate-source voltage (V_GS) threshold is compatible with low-voltage drive designs, enabling its integration in battery-operated devices and other sensitive electronics. Overall, the SI7129DN-T1-GE3 is valued for its reliability, efficiency, and adaptability in modern power electronics.
Equivalent
The SI7129DN-T1-GE3 is a P-channel MOSFET. Equivalent products may include:
1. IRF9540N - Another P-channel MOSFET with similar voltage and current ratings.
2. FQP27P06 - A P-channel MOSFET with comparable specifications.
3. AO3401A - A smaller package alternative with similar electrical characteristics.
Always verify specifications and pin configurations to ensure compatibility when selecting equivalent parts.
1. IRF9540N - Another P-channel MOSFET with similar voltage and current ratings.
2. FQP27P06 - A P-channel MOSFET with comparable specifications.
3. AO3401A - A smaller package alternative with similar electrical characteristics.
Always verify specifications and pin configurations to ensure compatibility when selecting equivalent parts.
Features
The SI7129DN-T1-GE3 is a N-channel MOSFET designed for efficient power management applications. Key features include:
1. Low On-Resistance: The MOSFET offers low Rds(on) values, enhancing conductivity and power efficiency.
2. High Current Capacity: It supports a continuous drain current of around 20A, making it suitable for high-power applications.
3. Low Threshold Voltage: This feature ensures that the MOSFET can operate effectively at low gate voltages.
4. Fast Switching Speed: It is designed for quick switching, which reduces power loss and improves efficiency.
5. Thermal Performance: The device comes in a PowerPAK® SO-8 package, which provides excellent thermal performance.
6. ESD Protection: Enhanced protection against electrostatic discharge contributes to device reliability.
7. Lead-Free and RoHS Compliant: The component is environmentally friendly, adhering to modern regulatory standards.
Overall, the SI7129DN-T1-GE3 is ideal for applications requiring efficient load switching and power conversion, such as in computing and telecommunications equipment.
1. Low On-Resistance: The MOSFET offers low Rds(on) values, enhancing conductivity and power efficiency.
2. High Current Capacity: It supports a continuous drain current of around 20A, making it suitable for high-power applications.
3. Low Threshold Voltage: This feature ensures that the MOSFET can operate effectively at low gate voltages.
4. Fast Switching Speed: It is designed for quick switching, which reduces power loss and improves efficiency.
5. Thermal Performance: The device comes in a PowerPAK® SO-8 package, which provides excellent thermal performance.
6. ESD Protection: Enhanced protection against electrostatic discharge contributes to device reliability.
7. Lead-Free and RoHS Compliant: The component is environmentally friendly, adhering to modern regulatory standards.
Overall, the SI7129DN-T1-GE3 is ideal for applications requiring efficient load switching and power conversion, such as in computing and telecommunications equipment.
Pinout
The SI7129DN-T1-GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay Siliconix. It is primarily used in power management applications.
The device comes in a PowerPAK® SO-8 package, which typically features an 8-pin configuration. However, the SI7129DN itself utilizes only a subset of these pins for its primary functions:
1. Drain (D): There are typically two drain pins to facilitate current flow and improve thermal performance.
2. Source (S): Several pins are dedicated as source connections, which serve as the return path for the current.
3. Gate (G): One pin is used as the gate, which controls the on and off states of the MOSFET.
The exact pin assignment can vary slightly depending on the specific arrangement by the manufacturer, but the general configuration aligns with these functions. Always refer to the specific datasheet for precise pin configuration and additional details such as maximum ratings and electrical characteristics.
The device comes in a PowerPAK® SO-8 package, which typically features an 8-pin configuration. However, the SI7129DN itself utilizes only a subset of these pins for its primary functions:
1. Drain (D): There are typically two drain pins to facilitate current flow and improve thermal performance.
2. Source (S): Several pins are dedicated as source connections, which serve as the return path for the current.
3. Gate (G): One pin is used as the gate, which controls the on and off states of the MOSFET.
The exact pin assignment can vary slightly depending on the specific arrangement by the manufacturer, but the general configuration aligns with these functions. Always refer to the specific datasheet for precise pin configuration and additional details such as maximum ratings and electrical characteristics.
Manufacturer
The SI7129DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company produces a wide range of components including diodes, transistors, optoelectronics, capacitors, resistors, and inductors, which are used in a variety of industries such as automotive, industrial, consumer electronics, computing, telecommunications, military, and medical markets. Vishay is known for its extensive product line and innovation in the electronics component industry.
Application
The SI7129DN-T1-GE3 is a MOSFET typically used in various electronic applications. Its primary application areas include power management for portable and consumer electronics, load switching, DC-DC converters, and power supply circuits. It is also utilized in motor control systems, LED drivers, and battery management systems due to its efficiency and low on-resistance. The device's compact design and high performance make it suitable for use in space-constrained applications such as smartphones, tablets, and other compact electronic devices.
Package
The SI7129DN-T1-GE3 is a MOSFET device housed in a PowerPAK® SO-8 package. This package type is known for its compact size and efficient thermal performance, making it suitable for power management applications.
