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SI7143DP-T1-GE3
+BOMMOSFET P-CH 30V 35A PPAK SO-8
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제조업체실리콘 닉스
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제조업체 부품 #SI7143DP-T1-GE3
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사양
| 속성 | 가치 |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 16.1A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2230 pF @ 15 V |
| Power Dissipation (Max) | 4.2W (Ta), 35.7W (Tc) |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Base Product Number | SI7143 |
개요
Description
The SI7143DP-T1-GE3 is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for efficient power management in various applications. It features low on-resistance (RDS(on)), which minimizes conduction losses, making it ideal for use in power supplies, DC-DC converters, and motor control applications. The device operates at a maximum drain-source voltage (VDS) of 30V, with a continuous drain current (ID) rating of 30A, allowing it to handle substantial power levels.
The SI7143DP-T1-GE3 is packaged in a compact SO-8 format, facilitating easy integration into circuit boards. Its fast switching capabilities contribute to improved efficiency in high-frequency applications. Additionally, the MOSFET is characterized by its low gate charge (Qg), further enhancing its performance in dynamic switching environments. Overall, the SI7143DP-T1-GE3 is an excellent choice for designers seeking reliable and efficient solutions in power electronics.
The SI7143DP-T1-GE3 is packaged in a compact SO-8 format, facilitating easy integration into circuit boards. Its fast switching capabilities contribute to improved efficiency in high-frequency applications. Additionally, the MOSFET is characterized by its low gate charge (Qg), further enhancing its performance in dynamic switching environments. Overall, the SI7143DP-T1-GE3 is an excellent choice for designers seeking reliable and efficient solutions in power electronics.
Equivalent
The SI7143DP-T1-GE3 is a N-channel MOSFET. Equivalent products include the BSS138, IRLZ44N and STP16NF06. For exact replacements, consider looking for similar specifications such as voltage rating, current rating, and R_DS(on). Always verify the datasheets for compatibility in your specific application.
Features
The SI7143DP-T1-GE3 is a N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
2. Current Rating: The device supports continuous drain current (I_D) of up to 60A, allowing high current switching.
3. R_DS(on): It has a low on-state resistance, typically around 5.8 mΩ, which enhances efficiency and reduces heat generation during operation.
4. Gate Threshold Voltage: The threshold voltage (V_GS(th)) ranges from 1V to 2.5V, ensuring compatibility with low-voltage driving circuits.
5. Package: It comes in a compact SO-8 package, facilitating space-efficient designs.
6. Fast Switching Speed: The device exhibits quick turn-on and turn-off times, suitable for high-frequency applications.
These features make the SI7143DP-T1-GE3 ideal for applications in power management, DC-DC converters, and motor control systems.
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
2. Current Rating: The device supports continuous drain current (I_D) of up to 60A, allowing high current switching.
3. R_DS(on): It has a low on-state resistance, typically around 5.8 mΩ, which enhances efficiency and reduces heat generation during operation.
4. Gate Threshold Voltage: The threshold voltage (V_GS(th)) ranges from 1V to 2.5V, ensuring compatibility with low-voltage driving circuits.
5. Package: It comes in a compact SO-8 package, facilitating space-efficient designs.
6. Fast Switching Speed: The device exhibits quick turn-on and turn-off times, suitable for high-frequency applications.
These features make the SI7143DP-T1-GE3 ideal for applications in power management, DC-DC converters, and motor control systems.
Pinout
The SI7143DP-T1-GE3 is a N-channel MOSFET with a pin count of 8. Its primary function is to act as a switch or amplifier in electronic circuits, particularly in power management applications. The device features a low on-resistance, making it suitable for high-efficiency power applications.
The pin configuration is as follows:
1. Gate (G)
2. Drain (D)
3. Source (S)
4. Source (S) - (common for dual-source configuration)
5. Gate (G) - (common for dual-gate configuration)
6. Drain (D) - (common for dual-drain configuration)
7. N/C (Not Connected)
8. N/C (Not Connected)
For specifics regarding electrical characteristics, thermal performance, and maximum ratings, refer to the manufacturer's datasheet.
The pin configuration is as follows:
1. Gate (G)
2. Drain (D)
3. Source (S)
4. Source (S) - (common for dual-source configuration)
5. Gate (G) - (common for dual-gate configuration)
6. Drain (D) - (common for dual-drain configuration)
7. N/C (Not Connected)
8. N/C (Not Connected)
For specifics regarding electrical characteristics, thermal performance, and maximum ratings, refer to the manufacturer's datasheet.
Manufacturer
The SI7143DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a prominent global manufacturer of electronic components, specializing in semiconductors and passive components. Founded in 1962, the company is known for its extensive product portfolio, which includes resistors, capacitors, inductors, diodes, and MOSFETs, among other components.
Vishay serves a wide range of industries, including automotive, industrial, telecommunications, consumer electronics, and military/aerospace. The SI7143DP-T1-GE3 is a N-channel MOSFET designed for use in various power management applications, contributing to Vishay's reputation for producing reliable and high-performance components that meet diverse customer needs.
With a commitment to innovation and quality, Vishay continues to be a key player in the electronics manufacturing industry, facilitating advancements in technology and design for various applications worldwide.
Vishay serves a wide range of industries, including automotive, industrial, telecommunications, consumer electronics, and military/aerospace. The SI7143DP-T1-GE3 is a N-channel MOSFET designed for use in various power management applications, contributing to Vishay's reputation for producing reliable and high-performance components that meet diverse customer needs.
With a commitment to innovation and quality, Vishay continues to be a key player in the electronics manufacturing industry, facilitating advancements in technology and design for various applications worldwide.
Application
The SI7143DP-T1-GE3 is a N-channel MOSFET primarily used in power management applications due to its low on-resistance and fast switching capabilities. Key application areas include:
1. DC-DC Converters: Efficiently converting voltage levels in power supplies.
2. Load Switching: Controlling power to various electronic devices.
3. Motor Control: Driving motors in automotive and industrial applications.
4. Battery Management Systems: Enhancing performance in lithium-ion battery applications.
5. Power Amplifiers: Serving in RF and audio amplifier circuits.
Its versatility makes it suitable for consumer electronics, automotive, and industrial applications.
1. DC-DC Converters: Efficiently converting voltage levels in power supplies.
2. Load Switching: Controlling power to various electronic devices.
3. Motor Control: Driving motors in automotive and industrial applications.
4. Battery Management Systems: Enhancing performance in lithium-ion battery applications.
5. Power Amplifiers: Serving in RF and audio amplifier circuits.
Its versatility makes it suitable for consumer electronics, automotive, and industrial applications.
Package
The SI7143DP-T1-GE3 is packaged in a SO-8 (Small Outline 8) surface-mount package. This compact package design allows for efficient thermal performance and space-saving in electronic applications.
