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SI7149ADP-T1-GE3
+BOMMOSFET P-CH 30V 50A PPAK SO-8
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제조업체실리콘 닉스
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제조업체 부품 #SI7149ADP-T1-GE3
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패키지 PowerPAK-SO-8
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재고7050
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사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 50A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 5.2mOhm @ 15A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 135 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 5125 pF @ 15 V |
| Power Dissipation (Max) | 5W (Ta), 48W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
개요
Description
The SI7149ADP-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. Manufactured by Vishay Siliconix, this component is commonly used for switching and amplifying electronic signals in devices. The MOSFET features a low on-resistance, high-speed switching capabilities, and robust thermal performance, making it suitable for power management tasks.
Key specifications include a drain-source voltage (V_DS) rating of around 30V and a continuous drain current (I_D) capability, which varies based on specific operating conditions. Its compact package, typically a PowerPAK SO-8, aids in efficient thermal management and space-saving on circuit boards. The SI7149ADP-T1-GE3 is often chosen for applications in automotive, industrial, and consumer electronics due to its reliability and efficiency in handling power loads. This MOSFET is part of a series known for improving system efficiency, reducing power losses, and offering enhanced performance in compact packages, aligning with the demand for high-performance components in modern electronic systems.
Key specifications include a drain-source voltage (V_DS) rating of around 30V and a continuous drain current (I_D) capability, which varies based on specific operating conditions. Its compact package, typically a PowerPAK SO-8, aids in efficient thermal management and space-saving on circuit boards. The SI7149ADP-T1-GE3 is often chosen for applications in automotive, industrial, and consumer electronics due to its reliability and efficiency in handling power loads. This MOSFET is part of a series known for improving system efficiency, reducing power losses, and offering enhanced performance in compact packages, aligning with the demand for high-performance components in modern electronic systems.
Equivalent
The SI7149ADP-T1-GE3 is an N-channel MOSFET. Equivalent products might include the following with similar specifications:
1. IRF530 by Infineon Technologies
2. N-channel MOSFETs from the same series by Vishay
3. N-channel MOSFETs from ON Semiconductor with similar voltage and current ratings.
Always verify specific parameters like voltage, current, and Rds(on) before substitution.
1. IRF530 by Infineon Technologies
2. N-channel MOSFETs from the same series by Vishay
3. N-channel MOSFETs from ON Semiconductor with similar voltage and current ratings.
Always verify specific parameters like voltage, current, and Rds(on) before substitution.
Features
The SI7149ADP-T1-GE3 is a P-channel MOSFET known for its efficiency and compact design. Key features include:
1. Voltage and Current Ratings: It operates with a maximum drain-source voltage (V_DS) of -30V and can handle a continuous drain current (I_D) of up to -12A.
2. Low On-Resistance: The MOSFET boasts a low R_DS(on), which reduces power loss and improves efficiency in switching applications.
3. Package: It comes in a PowerPAK SO-8 package, which is conducive to efficient thermal performance and a smaller footprint in circuit designs.
4. Applications: Ideal for applications such as load switching, DC-DC converters, and other power management systems where space is a critical factor.
5. Temperature Range: It can operate across a wide temperature range, enhancing its reliability in various environmental conditions.
6. Efficiency: The low gate charge (Q_g) results in faster switching speeds and lower driving power requirements.
These features make the SI7149ADP-T1-GE3 a suitable choice for compact, high-efficiency power management solutions in electronic devices.
1. Voltage and Current Ratings: It operates with a maximum drain-source voltage (V_DS) of -30V and can handle a continuous drain current (I_D) of up to -12A.
2. Low On-Resistance: The MOSFET boasts a low R_DS(on), which reduces power loss and improves efficiency in switching applications.
3. Package: It comes in a PowerPAK SO-8 package, which is conducive to efficient thermal performance and a smaller footprint in circuit designs.
4. Applications: Ideal for applications such as load switching, DC-DC converters, and other power management systems where space is a critical factor.
5. Temperature Range: It can operate across a wide temperature range, enhancing its reliability in various environmental conditions.
6. Efficiency: The low gate charge (Q_g) results in faster switching speeds and lower driving power requirements.
These features make the SI7149ADP-T1-GE3 a suitable choice for compact, high-efficiency power management solutions in electronic devices.
Pinout
The SI7149ADP-T1-GE3 is a power MOSFET manufactured by Vishay Siliconix. It features an N-channel configuration. The device is typically housed in a PowerPAK SO-8 package, which generally has 8 pins. However, the effective pin count for electrical connection is usually considered as 3 leads: Gate (G), Drain (D), and Source (S).
Functions:
1. Gate (G): The gate terminal is used to control the MOSFET’s operation. By applying a voltage to the gate, the MOSFET can be switched between on (conducting) and off (non-conducting) states.
2. Drain (D): The drain is the terminal through which the main current flows when the MOSFET is in the on state. It is typically connected to the load.
3. Source (S): The source terminal is the return path for the current and is usually connected to ground in N-channel MOSFET configurations.
These MOSFETs are commonly used in power management applications, including DC-DC converters, battery management, and load switching, thanks to their efficiency and low on-resistance.
Functions:
1. Gate (G): The gate terminal is used to control the MOSFET’s operation. By applying a voltage to the gate, the MOSFET can be switched between on (conducting) and off (non-conducting) states.
2. Drain (D): The drain is the terminal through which the main current flows when the MOSFET is in the on state. It is typically connected to the load.
3. Source (S): The source terminal is the return path for the current and is usually connected to ground in N-channel MOSFET configurations.
These MOSFETs are commonly used in power management applications, including DC-DC converters, battery management, and load switching, thanks to their efficiency and low on-resistance.
Manufacturer
The SI7149ADP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a leading global manufacturer of discrete semiconductors and passive electronic components. The company produces a wide range of products, including diodes, MOSFETs, transistors, capacitors, resistors, and inductors. Vishay's components are used in various applications across different industries, including automotive, industrial, computing, consumer electronics, telecommunications, military, aerospace, and medical sectors. The company is known for its innovation and comprehensive product portfolio, supporting the evolving needs of electronic design engineers worldwide.
Application
The SI7149ADP-T1-GE3 is a MOSFET transistor commonly used in power management applications. Its primary application areas include DC-DC converters, load switching, and power supply circuits. It is suitable for use in consumer electronics, telecommunications, and computing systems. The device's low on-resistance and fast switching capabilities make it ideal for efficient power conversion and management in battery-operated devices and high-frequency circuits. Additionally, its compact package design allows for space-saving in densely packed electronic assemblies.
Package
The SI7149ADP-T1-GE3 is a MOSFET from Vishay, and it typically comes in a PowerPAK SO-8 package. This package type is known for its compact size, which supports efficient thermal management and lower parasitic inductance, making it suitable for high-performance applications.
