SI7155DP-T1-GE3

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SI7155DP-T1-GE3

+BOM

MOSFET P-CH 40V 31A/100A PPAK

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

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사양

속성 가치
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET® Gen III
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 31A (Ta), 100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 3.6mOhm @ 20A, 10V
Vgs(th)(Max)@Id 2.3V @ 250µA
GateCharge(Qg)(Max)@Vgs 330 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 12900 pF @ 20 V
PowerDissipation(Max) 6.25W (Ta), 104W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

개요

Description

The SI7155DP-T1-GE3 is a specific model of an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay Siliconix. It is designed for high-efficiency power management applications. Key features include a low on-resistance, which minimizes power loss and improves efficiency. It is capable of handling high current and voltage levels, making it suitable for applications such as DC-DC converters, power management systems, and load switching in a variety of electronic devices.
The MOSFET is housed in a compact PowerPAK SO-8 package, which offers enhanced thermal performance and efficient heat dissipation. This helps in maintaining reliability and performance even in demanding conditions. It is typically used in environments that require robust power handling capabilities.
The SI7155DP-T1-GE3 is part of Vishay’s product line focused on providing solutions for energy-efficient power electronics. It aligns with industry standards to ensure compatibility and performance across different platforms and applications. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.

Equivalent

The SI7155DP-T1-GE3 is a MOSFET chip produced by Vishay, commonly used in power management applications. Equivalent products by other manufacturers include:
1. Infineon: BSC042N03LS5
2. ON Semiconductor: NTMFS4935NT1G
3. STMicroelectronics: STL120N3LLH6
These equivalents should match or closely align with the SI7155DP-T1-GE3 in terms of voltage, current, and package specifications. Always verify the datasheets for compatibility in your specific application.

Features

The SI7155DP-T1-GE3 is a P-channel MOSFET designed for power management applications. Key features include:
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) of -30V and a continuous drain current (I_D) capacity depending on its operating conditions.
2. Low On-Resistance: This MOSFET offers low R_DS(on) values, which contributes to higher efficiency by minimizing power losses during operation.
3. Package Type: It is available in a PowerPAK® SO-8 package, which allows for efficient thermal performance and space-saving on printed circuit boards (PCBs).
4. Temperature Range: It is designed to operate efficiently over a wide temperature range, making it suitable for various environmental conditions.
5. Applications: The SI7155DP-T1-GE3 is typically used in applications such as load switching, battery protection, and DC-DC conversion.
6. Enhanced Performance: It offers fast switching speeds which improve efficiency and performance in high-frequency applications.
These features make the SI7155DP-T1-GE3 suitable for a variety of power management roles in electronic devices.

Pinout

The SI7155DP-T1-GE3 is a power MOSFET manufactured by Vishay Siliconix. It is designed for use in applications requiring high-speed switching and efficient power management. This device is housed in a PowerPAK SO-8 package, which typically has 8 pins.
The primary function of the SI7155DP-T1-GE3 is to serve as a switching element in electronic circuits, facilitating control of power delivery to various components. It is commonly used in synchronous buck converters, load switches, and other power management applications.
The 8 pins are generally allocated as follows: pins for the gate (G), drain (D), and source (S) connections, with multiple pins often used in parallel for drain and source to handle higher current. Exact pin configuration should be confirmed from the datasheet to understand specific connections and thermal characteristics.
For precise pin assignments and electrical characteristics, refer to the official datasheet provided by the manufacturer.

Manufacturer

The SI7155DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the manufacture of discrete semiconductors and passive electronic components. Founded in 1962, Vishay has grown to become one of the world's largest manufacturers in these categories by acquiring several other companies and expanding its product lines. Vishay's products are used in a wide variety of industries including automotive, industrial, computing, telecommunications, consumer electronics, military, aerospace, and medical markets. Their product offerings include resistors, inductors, capacitors, diodes, optoelectronics, and power MOSFETs, among others. The company is known for its innovation and extensive portfolio of components that are critical for electronic circuitry and signal processing.

Application

The SI7155DP-T1-GE3 is a power MOSFET commonly used in applications requiring efficient power management and conversion. Key application areas include:
1. DC-DC Converters: Used in voltage regulation and power supply designs.
2. Motor Drives: For controlling and powering motors in various devices.
3. Battery Management: Utilized in battery charging and protection circuits.
4. Telecommunications: In power amplifiers and RF applications.
5. Automotive Electronics: For electric and hybrid vehicle power systems.
6. Industrial Equipment: Used in power tools and automation systems.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.

Package

The SI7155DP-T1-GE3 is a PowerPAK® SO-8 package type. This package is designed to offer low thermal resistance and high power dissipation, commonly used for power MOSFETs.

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