SI7415DN-T1-GE3

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SI7415DN-T1-GE3

+BOM

MOSFET P-CH 60V 3.6A PPAK1212-8

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사양

속성 가치
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 3.6A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 65mOhm @ 5.7A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 25 nC @ 10 V
Vgs(Max) ±20V
PowerDissipation(Max) 1.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® 1212-8

개요

Description

The SI7415DN-T1-GE3 is a specific model of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay Siliconix. This component is part of the TrenchFET® series, known for their low on-resistance and high-efficiency performance in power management applications. The SI7415DN is housed in a PowerPAK® SO-8 package, which provides enhanced thermal performance and reliability in compact form factors.
Key features of the SI7415DN-T1-GE3 include:
1. Voltage and Current Ratings: Typically designed to handle a specific range of voltage and current, making it suitable for various power management tasks.
2. Low On-Resistance: Offers low R_DS(on) to reduce power losses and improve efficiency in applications.
3. Thermal Performance: The PowerPAK SO-8 package ensures effective heat dissipation.
4. Applications: Commonly used in DC-DC converters, power management, switching applications, and load switches.
Overall, the SI7415DN-T1-GE3 is ideal for applications requiring high efficiency and compact design, particularly beneficial in consumer electronics, telecommunications, and computing sectors.

Equivalent

The SI7415DN-T1-GE3 is a power MOSFET from Vishay. Equivalent products could include other N-channel MOSFETs with similar voltage, current, and package specifications. Examples from other manufacturers might include the IRF7413 from Infineon or the FDS6679 from ON Semiconductor. Always verify key parameters such as the drain-source voltage, continuous drain current, and package type to ensure compatibility.

Features

The SI7415DN-T1-GE3 is a MOSFET transistor manufactured by Vishay Siliconix. It features a P-channel configuration, making it suitable for use in various switching applications. Key features include:
1. Voltage and Current Ratings: The transistor can handle a drain-source voltage (V_DS) of up to -20V and a continuous drain current (I_D) of approximately -12A.
2. Low On-Resistance: It boasts a low on-state resistance (R_DS(on)) of about 0.018 ohms at a gate-source voltage (V_GS) of -4.5V, which ensures efficient performance with reduced power losses.
3. Compact Package: The device is housed in a PowerPAK 1212-8 package, which provides efficient thermal performance and is suitable for space-constrained applications.
4. Temperature Range: The operating junction temperature range is -55°C to +150°C, allowing for reliable operation in various environmental conditions.
5. Applications: This MOSFET is ideal for use in power management, load switching, and battery protection circuits.
Overall, the SI7415DN-T1-GE3 offers a combination of efficiency and reliability suitable for modern electronic applications.

Pinout

The SI7415DN-T1-GE3 is a power MOSFET from Vishay Siliconix. It is packaged in a PowerPAK SO-8, which typically has an 8-pin layout. Here is a brief overview of its pin functions:
1. Pins 1, 2, 3 (Source): These are connected internally and serve as the source terminals of the MOSFET.
2. Pin 4 (Gate): This pin is used to control the MOSFET. A voltage applied to the gate will allow current to flow between the drain and source.
3. Pins 5, 6, 7, 8 (Drain): These are connected internally and serve as the drain terminals.
The SI7415DN is designed for applications that require efficient switching and low on-resistance, making it suitable for power management in various electronic devices. It is commonly used in DC-DC converters, load switches, and general power switching.

Manufacturer

The SI7415DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962 and headquartered in Malvern, Pennsylvania, USA, the company produces a wide range of products including diodes, MOSFETs, optoelectronics, and resistors. Vishay's components are used in various industries such as automotive, industrial, computing, consumer, telecommunications, and military applications. The company's focus is on delivering reliable, high-performance components that support energy efficiency and technological advancements.

Application

The SI7415DN-T1-GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in power management applications. Key application areas include:
1. DC-DC Converters: Utilized in switching regulators for efficient power conversion.
2. Load Switches: Acts as an electronic switch in power distribution.
3. Battery Management: Helps in battery protection and charging circuits.
4. Motor Drives: Used in controlling motors in various devices.
5. LED Drivers: Facilitates efficient driving of LED circuits.
6. Telecommunications: Employed in power amplification and distribution systems.
These applications benefit from the MOSFET's low on-resistance and high efficiency.

Package

The SI7415DN-T1-GE3 is a Power MOSFET from Vishay Siliconix. It comes in an SO-8 package type, which is a small-outline package used for surface-mount applications.

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