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SI7450DP-T1-GE3
+BOMMOSFET N-CH 200V 3.2A PPAK SO-8
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제조업체실리콘 닉스
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제조업체 부품 #SI7450DP-T1-GE3
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사양
| 속성 | 가치 |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 3.2A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 80mOhm @ 4A, 10V |
| Vgs(th)(Max) @ Id | 4.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 42 nC @ 10 V |
| Vgs(Max) | ±20V |
| Power Dissipation (Max) | 1.9W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
개요
Description
The SI7450DP-T1-GE3 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Vishay Intertechnology. It is designed for use in high-efficiency power management and switching applications. Key features of this component include its N-channel configuration, which allows for efficient control of electrical power. The MOSFET is known for its low on-resistance, which minimizes power loss and increases efficiency.
It typically comes in a PowerPAK SO-8 package, which supports high current handling and provides good thermal performance. This component is suitable for applications such as DC-DC converters, synchronous rectification in power supplies, load switching, and motor control.
The SI7450DP-T1-GE3 is designed to operate across a wide temperature range, making it versatile for various industrial and consumer applications. With its robust design and efficient performance, it is an excellent choice for engineers looking to optimize power systems in their designs. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
It typically comes in a PowerPAK SO-8 package, which supports high current handling and provides good thermal performance. This component is suitable for applications such as DC-DC converters, synchronous rectification in power supplies, load switching, and motor control.
The SI7450DP-T1-GE3 is designed to operate across a wide temperature range, making it versatile for various industrial and consumer applications. With its robust design and efficient performance, it is an excellent choice for engineers looking to optimize power systems in their designs. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
Equivalent
The SI7450DP-T1-GE3 is a MOSFET from Vishay. Equivalent products would include similar N-channel MOSFETs with comparable voltage and current ratings, and package type. Examples might be:
1. Infineon BSC123N08NS3 – Similar voltage and current specifications.
2. ON Semiconductor NTMFS4935NT1G – Comparable in performance and package.
3. Texas Instruments CSD18543Q3A – Matches in key specifications and size.
Always verify the datasheets to ensure compatibility with your application.
1. Infineon BSC123N08NS3 – Similar voltage and current specifications.
2. ON Semiconductor NTMFS4935NT1G – Comparable in performance and package.
3. Texas Instruments CSD18543Q3A – Matches in key specifications and size.
Always verify the datasheets to ensure compatibility with your application.
Features
The SI7450DP-T1-GE3 is a power MOSFET designed by Vishay Siliconix. It features an N-channel MOSFET structure, which is known for its high efficiency and fast switching capabilities. Key features include a low on-resistance (R_DS(on)) for minimal power loss, making it suitable for applications requiring efficient power management. It supports a maximum drain-source voltage (V_DS) of around 30V and can handle substantial continuous drain current, which makes it ideal for use in power supplies, DC-DC converters, and motor control circuits.
The device is housed in a PowerPAK SO-8 package, offering enhanced thermal performance with a low-profile design suitable for compact applications. It provides excellent thermal resistance, ensuring reliable operation under high-power conditions. The SI7450DP-T1-GE3 also includes ESD protection for increased robustness against electrostatic discharge, contributing to its reliability in various operating environments. Overall, this MOSFET is valued for its efficiency, thermal performance, and robust design, making it a popular choice in the electronics industry for power management applications.
The device is housed in a PowerPAK SO-8 package, offering enhanced thermal performance with a low-profile design suitable for compact applications. It provides excellent thermal resistance, ensuring reliable operation under high-power conditions. The SI7450DP-T1-GE3 also includes ESD protection for increased robustness against electrostatic discharge, contributing to its reliability in various operating environments. Overall, this MOSFET is valued for its efficiency, thermal performance, and robust design, making it a popular choice in the electronics industry for power management applications.
Pinout
The SI7450DP-T1-GE3 is a power MOSFET manufactured by Vishay Siliconix. It comes in a PowerPAK SO-8 package, which typically has an 8-pin configuration. The actual MOSFET may use fewer pins for its primary functions, while others may be internally connected or used for thermal and mechanical stability.
Key functions of the SI7450DP-T1-GE3 include:
- Drain (D): The terminal where the load is connected. It typically handles high voltage and current.
- Gate (G): The control terminal that modulates the conductivity of the MOSFET. A voltage applied here turns the MOSFET on or off.
- Source (S): The terminal where current enters the MOSFET.
In a typical configuration, some pins might be internally connected, like multiple pins for the drain or source to accommodate higher current handling and better heat dissipation. Always refer to the specific datasheet for details on pin connections and layout.
Key functions of the SI7450DP-T1-GE3 include:
- Drain (D): The terminal where the load is connected. It typically handles high voltage and current.
- Gate (G): The control terminal that modulates the conductivity of the MOSFET. A voltage applied here turns the MOSFET on or off.
- Source (S): The terminal where current enters the MOSFET.
In a typical configuration, some pins might be internally connected, like multiple pins for the drain or source to accommodate higher current handling and better heat dissipation. Always refer to the specific datasheet for details on pin connections and layout.
Manufacturer
The SI7450DP-T1-GE3 is manufactured by Vishay Intertechnology. Vishay is an American company that specializes in the production of discrete semiconductors and passive electronic components. Founded in 1962, the company provides a wide range of components that are essential for electronic devices and systems across various industries, including automotive, industrial, computing, consumer electronics, telecommunications, and more. Vishay's product portfolio includes transistors, diodes, integrated circuits, resistors, capacitors, inductors, and optoelectronics, making it a key player in the global electronics components market.
Application
The SI7450DP-T1-GE3 is a power MOSFET primarily used in applications that require efficient power management and control. Key application areas include:
1. DC-DC Converters: Utilized in synchronous rectification to enhance efficiency.
2. Power Management: Ideal for load switching and protection circuits in power management systems.
3. Automotive Systems: Used for high-efficiency power delivery and control in automotive electronic systems.
4. Consumer Electronics: Supports efficient power usage in devices such as laptops and gaming consoles.
5. Industrial Equipment: Applied in motor drives and other industrial power control systems.
These applications benefit from its low on-resistance and high current handling capabilities.
1. DC-DC Converters: Utilized in synchronous rectification to enhance efficiency.
2. Power Management: Ideal for load switching and protection circuits in power management systems.
3. Automotive Systems: Used for high-efficiency power delivery and control in automotive electronic systems.
4. Consumer Electronics: Supports efficient power usage in devices such as laptops and gaming consoles.
5. Industrial Equipment: Applied in motor drives and other industrial power control systems.
These applications benefit from its low on-resistance and high current handling capabilities.
Package
The SI7450DP-T1-GE3 is a power MOSFET packaged in a PowerPAK SO-8 format. This package type is designed for efficient thermal performance and space-saving on circuit boards, making it ideal for high-power and compact applications.
