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SI7454DDP-T1-GE3
+BOMMOSFET N-CH 100V 21A PPAK SO-8
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제조업체실리콘 닉스
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제조업체 부품 #SI7454DDP-T1-GE3
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사양
| 속성 | 가치 |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 21A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 33mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 19.5 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 550 pF @ 50 V |
| Power Dissipation (Max) | 4.1W (Ta), 29.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
개요
Description
The key features of the SI7454DDP-T1-GE3 include low on-resistance, which minimizes power losses, and high-current handling capabilities, making it suitable for high-power applications. It is packaged in a compact form factor, often in a PowerPAK SO-8 package, which is designed to provide enhanced thermal performance. Additionally, the MOSFET may offer features like fast switching speed and robustness, contributing to overall system efficiency and reliability.
Overall, the SI7454DDP-T1-GE3 is valued for its efficiency, compact size, and performance, aiding in the design of energy-efficient and compact electronic systems.
Equivalent
1. Infineon BSC057N04LS: Offers similar voltage and current ratings.
2. ON Semiconductor NTMFS4935N: Comparable in terms of on-resistance and power handling.
3. STMicroelectronics STL50N4LLF5: Matches in voltage and current specifications.
These alternatives should be verified for specific applications to ensure compatibility with performance needs.
Features
1. Dual N-Channel Configuration: Allows for compact design and efficient power usage.
2. Low On-Resistance: Offers reduced power loss and improved efficiency.
3. Fast Switching Speed: Enhances performance in high-speed applications.
4. Small Package: Comes in a PowerPAK® SO-8 package, suitable for space-constrained designs.
5. High Current Capability: Supports high current loads, making it versatile for various applications.
6. Thermal Performance: Optimized for better heat dissipation.
7. Logic Level Compatibility: Can be driven with low voltage levels, compatible with microcontrollers and logic circuits.
8. ESD Protection: Built-in electrostatic discharge protection enhances reliability.
These features make the SI7454DDP-T1-GE3 a suitable choice for consumer electronics, computing, and industrial applications where space efficiency and performance are critical.
Pinout
Here's a brief overview of its functions:
- Type: N-Channel MOSFET
- Purpose: Used for switching and amplification in electronic circuits.
- Applications: Suitable for DC-DC converters, load switching, and power management in various electronic devices.
The pin configuration typically involves:
- Drain (D): Connected to the load.
- Gate (G): Receives the control voltage to turn the MOSFET on or off.
- Source (S): Connected to ground or the return path of the circuit.
The exact layout of the pins (which pins are designated as drain, gate, and source) can be confirmed in the datasheet for the specific device. For detailed electrical characteristics and ratings, consulting the manufacturer's datasheet is recommended.