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SI7461DP-T1-GE3
+BOMMOSFET P-CH 60V 8.6A PPAK SO-8
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제조업체실리콘 닉스
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제조업체 부품 #SI7461DP-T1-GE3
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패키지 PowerPAK-SO-8
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사양
| 속성 | 가치 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 8.6A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 14.5mOhm @ 14.4A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 190 nC @ 10 V |
| Vgs(Max) | ±20V |
| PowerDissipation(Max) | 1.9W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® SO-8 |
개요
Description
Key features include a low on-resistance, which minimizes power loss and enhances efficiency. The MOSFET is designed to handle high currents and voltages, making it suitable for applications like DC-DC converters, load switches, and other power management tasks. It also has a low gate charge, which reduces the power required to switch the device, contributing to overall energy efficiency.
The SI7461DP-T1-GE3 is widely used in consumer electronics, industrial equipment, and automotive applications, where reliable and efficient power control is essential.
Equivalent
1. IRF530 by International Rectifier (now Infineon)
2. FQP27P06 by ON Semiconductor
3. NTD4960N by ON Semiconductor
4. 2N7002 by NXP or Fairchild
When selecting an equivalent, ensure the voltage, current ratings, and package type match your requirements. Always verify with manufacturer datasheets.
Features
1. Type and Configuration: It is an N-channel MOSFET.
2. Voltage and Current Ratings: The device typically handles a drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of approximately 18A at 25°C.
3. On-Resistance: It has a low on-resistance (R_DS(on)) of about 4.4 mΩ, enhancing efficiency by minimizing power loss.
4. Package: This MOSFET is available in a PowerPAK SO-8 package, providing efficient thermal performance.
5. Temperature Range: Operates effectively over a wide temperature range.
6. Applications: Ideal for applications such as DC-DC converters, motor drives, and load switching.
7. Enhanced Performance: Designed for fast switching speeds, improving performance in high-frequency applications.
These features make the SI7461DP-T1-GE3 suitable for a variety of power management applications requiring efficient and reliable switching.
Pinout
Pin Count and Function:
1. Drain (D): Four pins (pins 5, 6, 7, and 8) are connected to the drain. This configuration allows for enhanced current-carrying capability.
2. Source (S): Three pins (pins 1, 2, and 3) serve as the source of the MOSFET.
3. Gate (G): One pin (pin 4) is used as the gate. This pin controls the MOSFET's operation by regulating the flow of current between the drain and source.
This configuration allows for efficient thermal management and current distribution, making it suitable for high-performance applications. The device is commonly used in power management, load switching, and DC-DC converters.
Manufacturer
Application
1. DC-DC Converters: Used for voltage regulation in power supply circuits.
2. Motor Drives: Controls and manages power in motor driver circuits.
3. Load Switches: Acts as a switch for controlling power to various loads.
4. Battery Management: Helps in battery protection and management systems.
5. Telecommunications: Utilized in power amplification stages.
6. Consumer Electronics: Used in devices requiring efficient power management, such as laptops and mobile devices.
Overall, its low on-resistance and fast switching capabilities make it suitable for energy-efficient power conversion and management applications.