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SI7489DP-T1-E3
+BOMMOSFET P-CH 100V 28A PPAK SO-8
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제조업체실리콘 닉스
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제조업체 부품 #SI7489DP-T1-E3
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데이터시트 SI7489DP-T1-E3 DataSheet
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사양
| 속성 | 가치 |
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 28A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 41mOhm @ 7.8A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 160 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4600 pF @ 50 V |
| PowerDissipation(Max) | 5.2W (Ta), 83W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® SO-8 |
개요
Description
Key specifications include a drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of 60A, and a low gate charge, which enables fast switching and reduced power losses. The SI7489DP-T1-E3 is housed in a compact PowerPAK SO-8 package, allowing for efficient thermal performance and space-saving on circuit boards.
This MOSFET is commonly used in DC-DC converters, motor drives, and other applications requiring high power density and efficiency. Its robust design ensures reliable operation in various environments, making it a versatile choice for engineers looking to optimize power delivery in their electronic systems.
Equivalent
1. IRF530 - by International Rectifier
2. NTD4906N - by ON Semiconductor
3. FDP8870 - by Fairchild Semiconductor
4. 2N7002 - by NXP Semiconductors
These are similar in terms of functionality, but check specific parameters like voltage, current ratings, and package type for exact equivalence.
Features
1. N-Channel MOSFET: It is an N-channel MOSFET, often used for high-speed switching applications.
2. Low On-Resistance: It offers low on-state resistance, which minimizes power loss and improves efficiency.
3. High Power Capability: The device can handle significant power levels, suitable for various power management tasks.
4. Fast Switching: Designed for fast switching speed, enabling efficient energy usage and reduced power dissipation.
5. Package Type: Available in a PowerPAK SO-8 package, which provides a small footprint and efficient thermal performance.
6. Voltage and Current Ratings: Typically supports a range of voltage and current levels conducive for use in consumer electronics, automotive, and industrial applications.
7. Thermal Performance: Excellent thermal resistance characteristics, aiding in reliable performance under high-temperature conditions.
These features make the SI7489DP-T1-E3 suitable for applications requiring efficient power conversion and management.
Pinout
1. Pin Count: 8 pins
2. Pin Functions:
- Pins 1, 2, 3: Source (S) - These pins are connected to the source terminal of the MOSFET.
- Pin 4: Gate (G) - This pin is connected to the gate terminal, which controls the MOSFET's switching state.
- Pins 5, 6, 7, 8: Drain (D) - These pins are connected to the drain terminal. They are internally connected together to manage higher current capacity.
The device is commonly used for switching and amplification purposes in power management applications, offering features like low on-resistance and fast switching.
Manufacturer
Application
1. DC-DC Converters: Utilized in power supply circuits for efficient voltage regulation.
2. Motor Drives: Suitable for driving motors in various consumer electronics and industrial applications.
3. Load Switches: Acts as a switch for managing loads in power distribution networks.
4. Power Supplies: Used in the design of efficient power supply units for electronics.
5. Battery Management: Applied in battery protection and management systems for safe and efficient charging and discharging.
Its low on-resistance and high current handling capabilities make it ideal for these applications.