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SI7611DN-T1-GE3
+BOMMOSFET P-CH 40V 18A PPAK1212-8
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제조업체실리콘 닉스
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제조업체 부품 #SI7611DN-T1-GE3
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사양
| 속성 | 가치 |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 9.3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1980 pF @ 20 V |
| Power Dissipation (Max) | 3.7W (Ta), 39W (Tc) |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
| Package / Case | PowerPAK® 1212-8 |
| Base Product Number | SI7611 |
개요
Description
The SI7611DN-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. It features low on-resistance and fast switching speeds, making it suitable for various uses, including power supplies, DC-DC converters, and motor control circuits. With a maximum drain-to-source voltage of 30V and a continuous drain current of 62A, it can handle significant power loads efficiently.
The device is packaged in a compact SOIC-8 form factor, facilitating easier integration into electronic designs. Its gate threshold voltage ranges from 1V to 3V, allowing for compatibility with lower voltage drive circuits. The SI7611DN-T1-GE3 also boasts thermal performance, with a maximum junction temperature of 150°C, ensuring reliability in high-temperature environments.
Overall, the SI7611DN-T1-GE3 is a versatile and efficient choice for engineers seeking robust solutions in semiconductor applications.
The device is packaged in a compact SOIC-8 form factor, facilitating easier integration into electronic designs. Its gate threshold voltage ranges from 1V to 3V, allowing for compatibility with lower voltage drive circuits. The SI7611DN-T1-GE3 also boasts thermal performance, with a maximum junction temperature of 150°C, ensuring reliability in high-temperature environments.
Overall, the SI7611DN-T1-GE3 is a versatile and efficient choice for engineers seeking robust solutions in semiconductor applications.
Equivalent
The SI7611DN-T1-GE3 is a N-channel MOSFET. Equivalent products include the AO3400, IRLZ44N and FDS6910. When selecting a substitute, ensure compatibility in voltage, current ratings, RDS(on), and package type. Always review the datasheets for specifications to confirm equivalency.
Features
The SI7611DN-T1-GE3 is a N-channel MOSFET designed for efficient performance in various applications. Key features include:
1. Low On-Resistance: Offers a low R_DS(on) for improved efficiency and reduced power losses during operation.
2. High Voltage Rating: Supports a drain-source voltage (V_DS) of 30V, making it suitable for many power management applications.
3. High Current Capability: Can handle continuous drain current (I_D) up to 50A, providing versatility in designs requiring high power.
4. Fast Switching Speed: Ideal for applications that require rapid switching, enhancing overall system performance.
5. Thermal Stability: Equipped with good thermal performance, which helps ensure reliability during operation.
6. Surface Mount Package: Comes in a compact DPAK package, facilitating easier integration into printed circuit boards.
7. Low Gate Charge: Reduces power loss during the switching transitions.
These features make the SI7611DN-T1-GE3 suitable for applications in power management, DC-DC converters, and motor control systems.
1. Low On-Resistance: Offers a low R_DS(on) for improved efficiency and reduced power losses during operation.
2. High Voltage Rating: Supports a drain-source voltage (V_DS) of 30V, making it suitable for many power management applications.
3. High Current Capability: Can handle continuous drain current (I_D) up to 50A, providing versatility in designs requiring high power.
4. Fast Switching Speed: Ideal for applications that require rapid switching, enhancing overall system performance.
5. Thermal Stability: Equipped with good thermal performance, which helps ensure reliability during operation.
6. Surface Mount Package: Comes in a compact DPAK package, facilitating easier integration into printed circuit boards.
7. Low Gate Charge: Reduces power loss during the switching transitions.
These features make the SI7611DN-T1-GE3 suitable for applications in power management, DC-DC converters, and motor control systems.
Pinout
The SI7611DN-T1-GE3 is a N-channel MOSFET transistor with a total of 4 pins. The pin configuration and functions are as follows:
1. Gate (G) - This pin controls the MOSFET's operation by receiving the gate voltage.
2. Drain (D) - This pin is where the load is connected; it allows current to flow from the drain to the source when the MOSFET is turned on.
3. Source (S) - This pin is connected to the ground or the negative side of the power supply, allowing current to flow from the drain to the source.
4. Tab (if applicable) - Often used for thermal dissipation; may not be a pin but is part of the package for heat sinking.
This device is typically used in various applications, including power management, switching, and amplification in electronic circuits. The SI7611DN-T1-GE3 features low on-resistance and fast switching capabilities, making it suitable for efficient performance.
1. Gate (G) - This pin controls the MOSFET's operation by receiving the gate voltage.
2. Drain (D) - This pin is where the load is connected; it allows current to flow from the drain to the source when the MOSFET is turned on.
3. Source (S) - This pin is connected to the ground or the negative side of the power supply, allowing current to flow from the drain to the source.
4. Tab (if applicable) - Often used for thermal dissipation; may not be a pin but is part of the package for heat sinking.
This device is typically used in various applications, including power management, switching, and amplification in electronic circuits. The SI7611DN-T1-GE3 features low on-resistance and fast switching capabilities, making it suitable for efficient performance.
Manufacturer
The manufacturer of the SI7611DN-T1-GE3 is Vishay Intertechnology, Inc. Vishay is a global company that designs and manufactures a wide range of discrete semiconductors and passive electronic components. Founded in 1962, it operates in various sectors, including automotive, industrial, consumer, and telecommunications. Vishay is known for its extensive product portfolio, which includes diodes, transistors, resistors, capacitors, and inductors, among others. The company emphasizes innovation and quality, catering to the diverse needs of electronic device manufacturers around the world.
Application
The SI7611DN-T1-GE3 is a N-channel MOSFET commonly used in applications such as power management, DC-DC converters, and battery management systems. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power supplies, motor control, and load switching. Additionally, it's utilized in consumer electronics, automotive systems, and industrial automation for tasks requiring reliable and efficient power handling.
Package
The SI7611DN-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) format. This surface-mount package type features eight pins, making it suitable for various electronic applications due to its compact size and ease of handling in automated assembly processes.
