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SI7852DP-T1-GE3
+BOMMOSFET N-CH 80V 7.6A PPAK SO-8
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제조업체실리콘 닉스
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제조업체 부품 #SI7852DP-T1-GE3
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패키지 PowerPAK-SO-8
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사양
| 속성 | 가치 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 80 V |
| Current-ContinuousDrain(Id)@25°C | 7.6A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 16.5mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA (Min) |
| GateCharge(Qg)(Max)@Vgs | 41 nC @ 10 V |
| Vgs(Max) | ±20V |
| PowerDissipation(Max) | 1.9W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® SO-8 |
개요
Description
The SI7852DP-T1-GE3 is a dual N-channel MOSFET developed by Vishay Siliconix. It is designed for use in power management applications, offering efficient switching performance. The device is characterized by its low on-resistance and fast switching speeds, making it suitable for functions like load switching, DC-DC conversion, and power management in various electronic devices.
Key specifications include a low on-resistance, typically in the range of a few milliohms, which reduces power losses and improves efficiency. The device is housed in a compact, thermally enhanced PowerPAK® SO-8 package, which aids in effective heat dissipation. The SI7852DP-T1-GE3 is also capable of handling significant current loads, typically up to several tens of amperes, depending on the configuration and application.
Overall, this MOSFET is valued for its reliability, performance, and versatility in managing power in compact electronic circuits. It is commonly used in applications where space is limited, and efficiency is critical.
Key specifications include a low on-resistance, typically in the range of a few milliohms, which reduces power losses and improves efficiency. The device is housed in a compact, thermally enhanced PowerPAK® SO-8 package, which aids in effective heat dissipation. The SI7852DP-T1-GE3 is also capable of handling significant current loads, typically up to several tens of amperes, depending on the configuration and application.
Overall, this MOSFET is valued for its reliability, performance, and versatility in managing power in compact electronic circuits. It is commonly used in applications where space is limited, and efficiency is critical.
Equivalent
The SI7852DP-T1-GE3 is a P-channel MOSFET. Equivalent products can include:
1. Infineon BSC026N02LS - P-channel MOSFET with similar voltage and current ratings.
2. ON Semiconductor NTMS4P02R2 - Comparable P-channel MOSFET.
3. STMicroelectronics STS40P3LLH6 - Another similar P-channel MOSFET.
When selecting an equivalent, verify the specifications such as voltage, current, Rds(on), and package type to ensure compatibility.
1. Infineon BSC026N02LS - P-channel MOSFET with similar voltage and current ratings.
2. ON Semiconductor NTMS4P02R2 - Comparable P-channel MOSFET.
3. STMicroelectronics STS40P3LLH6 - Another similar P-channel MOSFET.
When selecting an equivalent, verify the specifications such as voltage, current, Rds(on), and package type to ensure compatibility.
Features
The SI7852DP-T1-GE3 is a power MOSFET designed for enhanced performance in electronic applications. Key features include:
1. N-Channel MOSFET: Suitable for a wide range of applications requiring efficient high-speed switching.
2. Low On-Resistance: Offers improved efficiency due to reduced power loss.
3. TrenchFET Technology: Provides superior performance with increased power density.
4. Compact Package: Housed in a PowerPAK SO-8 package, which is compact yet effective in thermal management.
5. High Drain Current: Can handle significant current levels, making it suitable for demanding applications.
6. Fast Switching Speed: Ideal for high-frequency applications which require rapid switching.
7. Enhanced Thermal Performance: The design facilitates better heat dissipation, improving reliability and longevity.
8. Lead-Free and RoHS Compliant: Environmentally friendly, aligning with global standards for hazardous substances.
These features make the SI7852DP-T1-GE3 a versatile choice for applications in power management, motor drives, and other electronic devices where efficient switching is critical.
1. N-Channel MOSFET: Suitable for a wide range of applications requiring efficient high-speed switching.
2. Low On-Resistance: Offers improved efficiency due to reduced power loss.
3. TrenchFET Technology: Provides superior performance with increased power density.
4. Compact Package: Housed in a PowerPAK SO-8 package, which is compact yet effective in thermal management.
5. High Drain Current: Can handle significant current levels, making it suitable for demanding applications.
6. Fast Switching Speed: Ideal for high-frequency applications which require rapid switching.
7. Enhanced Thermal Performance: The design facilitates better heat dissipation, improving reliability and longevity.
8. Lead-Free and RoHS Compliant: Environmentally friendly, aligning with global standards for hazardous substances.
These features make the SI7852DP-T1-GE3 a versatile choice for applications in power management, motor drives, and other electronic devices where efficient switching is critical.
Pinout
The SI7852DP-T1-GE3 is a power MOSFET manufactured by Vishay Siliconix. It is part of the TrenchFET series of MOSFETs. This particular MOSFET is housed in a PowerPAK SO-8 package, which typically has 8 leads or pins. The primary function of the SI7852DP-T1-GE3 is to act as a switch for power management in electronic circuits.
Key specifications include:
- N-Channel MOSFET
- Low on-resistance for efficient switching
- Suitable for use in a wide range of applications, including DC-DC converters and power management in computing and telecommunications.
The pin configuration usually includes:
- Source (S), Gate (G), and Drain (D) terminals.
- Multiple source and drain pins are often paralleled to achieve better current handling and lower resistance.
Always consult the datasheet for detailed pin assignments and electrical characteristics to ensure proper implementation in your design.
Key specifications include:
- N-Channel MOSFET
- Low on-resistance for efficient switching
- Suitable for use in a wide range of applications, including DC-DC converters and power management in computing and telecommunications.
The pin configuration usually includes:
- Source (S), Gate (G), and Drain (D) terminals.
- Multiple source and drain pins are often paralleled to achieve better current handling and lower resistance.
Always consult the datasheet for detailed pin assignments and electrical characteristics to ensure proper implementation in your design.
Manufacturer
The SI7852DP-T1-GE3 is a MOSFET transistor manufactured by Vishay Intertechnology, Inc. Vishay is an international company that specializes in manufacturing discrete semiconductors and passive electronic components. Founded in 1962, Vishay is known for producing a wide range of electronic components, including diodes, rectifiers, transistors, optoelectronics, resistors, inductors, and capacitors. The company's products are used in various industries, including automotive, industrial, computing, consumer electronics, telecommunications, military, aerospace, and medical markets. Vishay has established itself as a leading supplier in the electronics industry, providing components that are crucial for the functioning of a wide array of electronic devices and systems.
Application
The SI7852DP-T1-GE3 is a power MOSFET commonly used in various electronic applications. Its primary application areas include power management in DC-DC converters, voltage regulation modules, and power supply circuits. It is suitable for use in computing, telecommunications, and consumer electronics where efficient power conversion is critical. The MOSFET's characteristics make it ideal for load switching, motor drives, and as a control element in power management systems. Its low on-resistance and fast switching capabilities contribute to enhanced energy efficiency and thermal performance in these applications.
Package
The SI7852DP-T1-GE3 is a N-channel MOSFET, with a package type of PowerPAK SO-8. This package is designed for surface mounting on a PCB, offering efficient heat dissipation and compact size suitable for high-performance applications.
