사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 4.7A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 120mOhm @ 3.2A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 22 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 600 pF @ 30 V |
| Power Dissipation (Max) | 2.4W (Ta), 5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
개요
Description
The SI9407BDY-T1-GE3 is a P-channel MOSFET from Vishay Siliconix, designed for power management in compact, high-efficiency applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 28 mΩ at VGS = -4.5 V, reducing conduction losses.
- High Current Handling: Supports up to -5.7 A continuous drain current.
- Small Footprint: Packaged in a PowerPAK® SC-70, ideal for space-constrained designs.
- Low Gate Charge (Qg): Enhances switching efficiency.
Common uses include load switching, battery protection, and DC-DC conversion in portable electronics, IoT devices, and power supplies. Its -20 V drain-source voltage (VDS) rating ensures robustness in low-voltage systems.
This MOSFET combines performance, compactness, and energy efficiency, making it suitable for modern power-sensitive applications.
- Low On-Resistance (RDS(on)): Typically 28 mΩ at VGS = -4.5 V, reducing conduction losses.
- High Current Handling: Supports up to -5.7 A continuous drain current.
- Small Footprint: Packaged in a PowerPAK® SC-70, ideal for space-constrained designs.
- Low Gate Charge (Qg): Enhances switching efficiency.
Common uses include load switching, battery protection, and DC-DC conversion in portable electronics, IoT devices, and power supplies. Its -20 V drain-source voltage (VDS) rating ensures robustness in low-voltage systems.
This MOSFET combines performance, compactness, and energy efficiency, making it suitable for modern power-sensitive applications.
Pinout
The SI9407BDY-T1-GE3 is a P-channel MOSFET in a PowerPAK® SO-8 package with 8 pins.
Key Functions:
- Pins 1, 2, 3 (Source): Connected internally for power handling.
- Pin 4 (Gate): Controls switching.
- Pins 5, 6, 7, 8 (Drain): Internally linked for high current capability.
Features:
- -30V drain-source voltage (VDS)
- -12A continuous drain current (ID)
- Low on-resistance (RDS(on)) for efficient power management.
Used in power switching, load switching, and battery management applications.
Key Functions:
- Pins 1, 2, 3 (Source): Connected internally for power handling.
- Pin 4 (Gate): Controls switching.
- Pins 5, 6, 7, 8 (Drain): Internally linked for high current capability.
Features:
- -30V drain-source voltage (VDS)
- -12A continuous drain current (ID)
- Low on-resistance (RDS(on)) for efficient power management.
Used in power switching, load switching, and battery management applications.
Manufacturer
The SI9407BDY-T1-GE3 is manufactured by Vishay Intertechnology, a global leader in semiconductors and passive electronic components.
Vishay is a well-established company founded in 1962, known for producing high-performance MOSFETs, diodes, resistors, capacitors, and optoelectronics. They serve industries like automotive, industrial, computing, and consumer electronics, emphasizing innovation and reliability.
The SI9407BDY-T1-GE3 is a P-channel MOSFET, commonly used in power management applications. Vishay's products are widely trusted for efficiency and durability in demanding circuits.
Vishay is a well-established company founded in 1962, known for producing high-performance MOSFETs, diodes, resistors, capacitors, and optoelectronics. They serve industries like automotive, industrial, computing, and consumer electronics, emphasizing innovation and reliability.
The SI9407BDY-T1-GE3 is a P-channel MOSFET, commonly used in power management applications. Vishay's products are widely trusted for efficiency and durability in demanding circuits.
Application
The SI9407BDY-T1-GE3 is a P-channel MOSFET commonly used in:
1. Power Management – Load switching, battery protection, and DC-DC converters.
2. Portable Electronics – Smartphones, tablets, and wearables for power efficiency.
3. Automotive Systems – Infotainment, lighting, and power distribution.
4. Industrial Applications – Motor control and power supply modules.
5. Consumer Electronics – USB power switches and charging circuits.
Its low on-resistance and compact package make it ideal for space-constrained, high-efficiency designs.
1. Power Management – Load switching, battery protection, and DC-DC converters.
2. Portable Electronics – Smartphones, tablets, and wearables for power efficiency.
3. Automotive Systems – Infotainment, lighting, and power distribution.
4. Industrial Applications – Motor control and power supply modules.
5. Consumer Electronics – USB power switches and charging circuits.
Its low on-resistance and compact package make it ideal for space-constrained, high-efficiency designs.
Package
The SI9407BDY-T1-GE3 is a PowerPAK® SO-8 package, a compact surface-mount design optimized for high-power applications. It features a small footprint (5mm x 6mm) with improved thermal performance due to an exposed pad. This package is commonly used for MOSFETs in power management circuits.
