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SIC453ED-T1-GE3
+BOM4.5 V TO 20 V INPUT, 15 A, 25 A
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제조업체실리콘 닉스
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제조업체 부품 #SIC453ED-T1-GE3
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재고4388
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사양
| 속성 | 가치 |
| Package / Case | 1 |
| Series | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | microBUCK® |
| Function | Active |
| Output Configuration | Step-Down |
| Topology | Positive |
| Output Type | Buck |
| Number of Outputs | Adjustable |
| Voltage - Input (Min) | 1 |
| Voltage - Input (Max) | 4.5V |
| Voltage - Output (Min/Fixed) | 20V |
| Voltage - Output (Max) | 0.3V |
| Current - Output | 12V |
| Frequency - Switching | 15A |
| Synchronous Rectifier | 300kHz ~ 1.5MHz |
| Operating Temperature | Yes |
| Mounting Type | -40°C ~ 85°C (TA) |
개요
Description
- "SIC" could denote a department or field, such as Science, Information, or Computing.
- "453" might indicate the course level, possibly an advanced undergraduate or entry-level graduate class.
- "ED" might stand for Education, suggesting a focus on teaching within that field.
- "T1" could refer to the term or session, such as Term 1.
- "GE3" might indicate a general education requirement or category, such as Group 3.
This course would likely cover foundational concepts relevant to its department, offering students an introduction to essential theories, methodologies, and applications within the specified field. For precise details, including course content, prerequisites, and objectives, refer to the relevant academic institution's course catalog or syllabus.
Equivalent
Features
1. N-Channel MOSFET: It is an N-channel device, which is ideal for high-speed switching.
2. Low On-Resistance: Offers low drain-source resistance, which reduces power loss and increases efficiency.
3. High-Speed Switching: Designed for fast switching speeds, suitable for high-frequency applications.
4. Low Gate Charge: Features low gate charge, facilitating efficient driving and reducing switching losses.
5. Thermal Performance: Comes with a package that provides good thermal performance, aiding in heat dissipation.
6. Compact Package: Available in a compact package, which is suitable for space-constrained applications.
7. Protection Features: May include built-in protection features like ESD protection, enhancing device reliability.
This device is suitable for applications in power management, DC-DC converters, and various other electronic systems requiring efficient power control and switching.
Pinout
Key specifications include:
- Type: N-Channel MOSFET
- Drain-Source Voltage (Vds): 60V
- Continuous Drain Current (Id): Dependent on the thermal environment and specific conditions.
- Rds(on): Low on-resistance, which contributes to its efficiency in switching applications.
The pins are typically configured as follows:
- Two pins for the gate (G),
- Two for the source (S),
- Four for the drain (D),
This pin configuration helps to optimize performance by minimizing parasitic inductance and resistance, which is critical in high-frequency applications.