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SIR462DP-T1-GE3
+BOMMOSFET N-CH 30V 30A PPAK SO-8
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제조업체실리콘 닉스
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제조업체 부품 #SIR462DP-T1-GE3
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사양
| 속성 | 가치 |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 30A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 7.9mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 30 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1155 pF @ 15 V |
| Power Dissipation (Max) | 4.8W (Ta), 41.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
개요
Description
The SIR462DP-T1-GE3 is a semiconductor device, specifically a Schottky Barrier Rectifier, utilized in power management and conversion applications. Manufactured by Vishay, this component is designed for high efficiency and performance in switching power supplies and DC-to-DC converters.
Its key features include low forward voltage drop, which minimizes power loss and enhances efficiency, and a high current capability, which supports robust operation in demanding environments. The device also offers fast switching speeds, reducing energy consumption and improving overall system performance.
Housed in a surface-mount package, the SIR462DP-T1-GE3 is suitable for automated assembly processes, contributing to cost-efficient manufacturing. It is designed to handle medium to high power applications and provides reliable performance across a range of operating conditions.
This rectifier is ideal for use in applications where space, efficiency, and reliability are critical considerations, such as in consumer electronics, telecommunications, and computing equipment.
Its key features include low forward voltage drop, which minimizes power loss and enhances efficiency, and a high current capability, which supports robust operation in demanding environments. The device also offers fast switching speeds, reducing energy consumption and improving overall system performance.
Housed in a surface-mount package, the SIR462DP-T1-GE3 is suitable for automated assembly processes, contributing to cost-efficient manufacturing. It is designed to handle medium to high power applications and provides reliable performance across a range of operating conditions.
This rectifier is ideal for use in applications where space, efficiency, and reliability are critical considerations, such as in consumer electronics, telecommunications, and computing equipment.
Equivalent
The SIR462DP-T1-GE3 is a MOSFET produced by Vishay. Equivalent products can include similar MOSFETs from other manufacturers with comparable specifications, such as the IRF540N from Infineon, the NTD5867NL from ON Semiconductor, or the FQP30N06L from Fairchild/ON Semiconductor. When selecting an equivalent, it's important to compare key parameters like voltage rating, current capacity, Rds(on), and package type to ensure compatibility. Always consult datasheets to verify equivalency for your specific application.
Features
The SIR462DP-T1-GE3 is a silicon N-channel MOSFET designed for efficiency and high-performance applications. Key features include:
1. Voltage and Current Ratings: It operates with a drain-source voltage (V_DS) of up to 60V and a continuous drain current (I_D) of approximately 28A, making it suitable for medium-power applications.
2. Low On-Resistance: It features a low R_DS(on) which reduces power losses and enhances efficiency, crucial for applications demanding minimal power consumption.
3. Fast Switching Speed: The MOSFET exhibits rapid switching times, which is advantageous for high-frequency applications, improving overall system performance.
4. Package Type: It is available in a compact PowerPAK® SO-8 package, providing effective thermal performance and space-saving benefits for compact circuit designs.
5. Thermal Performance: Designed to handle thermal stress effectively, it supports high power density applications with efficient heat dissipation.
These features make the SIR462DP-T1-GE3 suitable for use in power management, DC-DC converters, motor drives, and other industrial and consumer electronics requiring reliable power control.
1. Voltage and Current Ratings: It operates with a drain-source voltage (V_DS) of up to 60V and a continuous drain current (I_D) of approximately 28A, making it suitable for medium-power applications.
2. Low On-Resistance: It features a low R_DS(on) which reduces power losses and enhances efficiency, crucial for applications demanding minimal power consumption.
3. Fast Switching Speed: The MOSFET exhibits rapid switching times, which is advantageous for high-frequency applications, improving overall system performance.
4. Package Type: It is available in a compact PowerPAK® SO-8 package, providing effective thermal performance and space-saving benefits for compact circuit designs.
5. Thermal Performance: Designed to handle thermal stress effectively, it supports high power density applications with efficient heat dissipation.
These features make the SIR462DP-T1-GE3 suitable for use in power management, DC-DC converters, motor drives, and other industrial and consumer electronics requiring reliable power control.
Pinout
The SIR462DP-T1-GE3 is a power MOSFET manufactured by Vishay Siliconix. It typically comes in a PowerPAK SO-8 package, which generally features a pin count of 8. The primary function of this MOSFET is to act as a switch or amplifier in electronic circuits, specifically for power management applications. It is designed to handle significant power levels, making it suitable for use in high-efficiency power conversion, load switching, and other power management tasks.
For detailed and specific information regarding the pin configuration and electrical characteristics, it is best to refer to the datasheet provided by the manufacturer. The datasheet will include important details such as the pin layout, electrical specifications, and recommended usage conditions to ensure optimal performance in your application.
For detailed and specific information regarding the pin configuration and electrical characteristics, it is best to refer to the datasheet provided by the manufacturer. The datasheet will include important details such as the pin layout, electrical specifications, and recommended usage conditions to ensure optimal performance in your application.
Manufacturer
The SIR462DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company produces a wide range of products, including diodes, MOSFETs, resistors, capacitors, inductors, and other semiconductor and electronic components. Vishay's components are used in various applications across different industries, such as automotive, industrial, computing, consumer electronics, telecommunications, and medical devices.
Founded in 1962 by Dr. Felix Zandman, Vishay has grown through strategic acquisitions and organic growth to become one of the largest manufacturers in its field. The company is known for its innovation in technology and manufacturing processes, enabling it to deliver high-quality and reliable components that meet stringent industry standards. With a strong global presence, Vishay operates numerous manufacturing facilities and sales offices worldwide, serving a vast customer base with a commitment to sustainability and corporate responsibility.
Founded in 1962 by Dr. Felix Zandman, Vishay has grown through strategic acquisitions and organic growth to become one of the largest manufacturers in its field. The company is known for its innovation in technology and manufacturing processes, enabling it to deliver high-quality and reliable components that meet stringent industry standards. With a strong global presence, Vishay operates numerous manufacturing facilities and sales offices worldwide, serving a vast customer base with a commitment to sustainability and corporate responsibility.
Application
The SIR462DP-T1-GE3 is a Trench MOS Barrier Schottky (TMBS) rectifier diode. Its application areas include power management systems, such as switch-mode power supplies (SMPS), DC-DC converters, and photovoltaic inverters. It is also used in battery charger circuits and reverse battery protection. The component's low forward voltage drop and high-efficiency characteristics make it suitable for reducing power losses in high-frequency applications and improving overall system efficiency. Additionally, it is used in automotive electronics for efficient power rectification and voltage regulation tasks.
Package
The SIR462DP-T1-GE3 is a power MOSFET typically packaged in a DPAK (TO-252) surface-mount package. This package type is designed for efficient thermal performance and is commonly used for power management applications.
