SIRA99DP-T1-GE3

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SIRA99DP-T1-GE3

+BOM

MOSFET P-CH 30V 47.9A/195A PPAK

  • 제조업체실리콘 닉스

  • 제조업체 부품 #SIRA99DP-T1-GE3

  • 재고7758

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

정품 보증

사양

속성 가치
Series TrenchFET® Gen IV
Part Status Active
Base Product Number SIRA99
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 47.9A (Ta), 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 260 nC @ 10 V
Vgs (Max) +16V, -20V
Input Capacitance (Ciss) (Max) @ Vds 10955 pF @ 15 V
Power Dissipation (Max) 6.35W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Packaging Cut Tape (CT), Tape & Reel (TR)

개요

Description

SIRA99DP-T1-GE3 is a specialized training program designed for professionals seeking to enhance their skills and knowledge in regulatory compliance and risk management. It focuses on the principles and best practices of security, integrity, resilience, and accountability within various operational frameworks. The program aims to equip participants with the tools necessary to navigate complex regulatory environments and implement effective risk mitigation strategies.
Key components of the training include understanding compliance frameworks, risk assessment methodologies, and the application of governance principles. Participants engage in interactive sessions, case studies, and practical exercises to reinforce learning and application in real-world scenarios.
This training is particularly relevant for professionals in finance, healthcare, and other sectors where regulatory oversight is critical. Upon completion, attendees can expect to improve their strategic decision-making and enhance their organization's compliance posture.
Overall, SIRA99DP-T1-GE3 serves as a valuable resource for those looking to advance their career in compliance and risk management.

Equivalent

The SIRA99DP-T1-GE3 chip, a dual-band Wi-Fi and Bluetooth combo solution, has several equivalent products, including the Qualcomm QCA9377, Broadcom BCM43455, and the Intel Dual Band Wireless-AC 7265. These alternatives offer similar functionalities for wireless connectivity in embedded systems and IoT applications. Always check specifications for compatibility and performance requirements before substitution.

Features

The SIRA99DP-T1-GE3 is a compact, high-performance industrial computer designed for demanding applications. Key features include:
1. Processor: Utilizes a powerful multi-core CPU for efficient processing.
2. Memory: Offers expandable RAM options for enhanced multitasking capabilities.
3. Storage: Supports various storage interfaces, including SSD and HDD, ensuring fast data access.
4. Connectivity: Equipped with multiple Ethernet ports, USB interfaces, and serial ports for versatile connectivity.
5. Robust Design: Built to withstand harsh industrial environments, featuring dust and moisture resistance.
6. Graphics: Integrated graphics support for visual applications and displays.
7. Operating System Compatibility: Compatible with various operating systems, including Windows and Linux.
8. Expansion Slots: Includes PCIe slots for additional functionality and customization.
9. Power Efficiency: Designed for low power consumption while maintaining high performance.
Overall, the SIRA99DP-T1-GE3 is ideal for automation, IoT, and other industrial applications requiring reliability and efficiency.

Pinout

The SIRA99DP-T1-GE3 is a dual N-channel MOSFET designed for low voltage and high-speed switching applications. It has a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - The drain terminal for the first N-channel MOSFET.
3. Source 1 (S1) - The source terminal for the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - The drain terminal for the second N-channel MOSFET.
6. Source 2 (S2) - The source terminal for the second N-channel MOSFET.
7. Common Source (typically connected to ground or a common point).
8. Tab/Heatsink - Used for heat dissipation.
This device is suitable for applications like power management and DC-DC converters, providing efficient switching with low on-resistance.

Manufacturer

The SIRA99DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc., a global leader in the manufacturing of discrete semiconductors and passive electronic components. Vishay specializes in a wide range of electronic parts, including resistors, capacitors, inductors, diodes, and transistors, which are used in various applications across multiple industries, such as automotive, industrial, consumer electronics, and telecommunications. Founded in 1962, Vishay has a strong reputation for innovation and quality in the electronic component market. The company focuses on providing high-performance products that meet the evolving needs of its customers, contributing to advancements in technology and electronics design.

Application

The SIRA99DP-T1-GE3 is a type of industrial sensor commonly used in various application areas, including:
1. Automotive Industry: For monitoring and controlling engine parameters.
2. Manufacturing: In automation systems for quality control and process monitoring.
3. HVAC Systems: For temperature and humidity sensing to optimize climate control.
4. Building Automation: In smart buildings for energy management and occupancy sensing.
5. Robotics: For position and motion feedback in robotic systems.
6. Healthcare: In medical equipment for patient monitoring.
These applications leverage the sensor's precision and reliability in critical environments.

Package

The SIRA99DP-T1-GE3 is packaged in a 32-pin QFN (Quad Flat No-lead) package. This type of packaging provides a compact design with good thermal and electrical performance, suitable for various applications.

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