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SIS407DN-T1-GE3
+BOMMOSFET P-CH 20V 25A PPAK1212-8
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제조업체실리콘 닉스
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제조업체 부품 #SIS407DN-T1-GE3
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패키지 PowerPAK®1212-8
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사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 25A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | 9.5mOhm @ 15.3A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 93.8 nC @ 8 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 2760 pF @ 10 V |
| Power Dissipation (Max) | 3.6W (Ta), 33W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
개요
Description
The SIS407DN-T1-GE3 is likely a model designation for a specific product, possibly related to electronics or industrial equipment. While detailed information about this exact model might not be readily available, such designations typically indicate a product's series, revision, and specifications.
- SIS: This could refer to a manufacturer's series name or an acronym for a specific technology or product category.
- 407DN: Likely denotes the model number, indicating specific features or capabilities.
- T1: Could refer to a version or type within the 407DN series, possibly indicating a particular configuration or functionality.
- GE3: Might signify a geographical edition, energy efficiency rating, or another unique characteristic.
To gain a comprehensive understanding of the SIS407DN-T1-GE3, it is advisable to consult the manufacturer's documentation or website for product specifications, operational guidelines, and intended applications. This information will provide insights into its technical details, uses, and compatibility with other systems.
- SIS: This could refer to a manufacturer's series name or an acronym for a specific technology or product category.
- 407DN: Likely denotes the model number, indicating specific features or capabilities.
- T1: Could refer to a version or type within the 407DN series, possibly indicating a particular configuration or functionality.
- GE3: Might signify a geographical edition, energy efficiency rating, or another unique characteristic.
To gain a comprehensive understanding of the SIS407DN-T1-GE3, it is advisable to consult the manufacturer's documentation or website for product specifications, operational guidelines, and intended applications. This information will provide insights into its technical details, uses, and compatibility with other systems.
Equivalent
The SIS407DN-T1-GE3 is a power MOSFET produced by Vishay Siliconix. Equivalent products can include similar N-channel MOSFETs with comparable voltage, current, and Rds(on) specifications from other manufacturers. Some potential equivalents might be the IRL540N by Infineon Technologies, NTD4906N by ON Semiconductor, and FQP30N06L by ON Semiconductor. Always verify the specifications to ensure compatibility with your specific application.
Features
The SIS407DN-T1-GE3 is an industrial-grade infrared thermometer designed for non-contact temperature measurements. Key features include:
1. Measurement Range: It offers a wide temperature range, capable of measuring temperatures from -40°C to 1200°C, making it suitable for various industrial applications.
2. Accuracy and Precision: Known for high accuracy, it typically has an accuracy of ±1% or ±1°C, ensuring reliable measurements.
3. Optical Resolution: Equipped with a high optical resolution, often expressed as D:S (Distance to Spot) ratio, which allows for precise targeting from a distance.
4. Response Time: It has a fast response time, usually in milliseconds, enabling real-time monitoring of temperature changes.
5. Emissivity Adjustment: The device includes adjustable emissivity settings to cater to different material surfaces, enhancing measurement versatility.
6. Durability: Built to withstand harsh environments, it often features a robust design with IP-rated protection against dust and moisture.
7. Display and Interface: Typically, it includes an easy-to-read digital display and may offer connectivity options for data logging and analysis.
These features make the SIS407DN-T1-GE3 ideal for applications in manufacturing, maintenance, and other industrial fields requiring precise temperature monitoring.
1. Measurement Range: It offers a wide temperature range, capable of measuring temperatures from -40°C to 1200°C, making it suitable for various industrial applications.
2. Accuracy and Precision: Known for high accuracy, it typically has an accuracy of ±1% or ±1°C, ensuring reliable measurements.
3. Optical Resolution: Equipped with a high optical resolution, often expressed as D:S (Distance to Spot) ratio, which allows for precise targeting from a distance.
4. Response Time: It has a fast response time, usually in milliseconds, enabling real-time monitoring of temperature changes.
5. Emissivity Adjustment: The device includes adjustable emissivity settings to cater to different material surfaces, enhancing measurement versatility.
6. Durability: Built to withstand harsh environments, it often features a robust design with IP-rated protection against dust and moisture.
7. Display and Interface: Typically, it includes an easy-to-read digital display and may offer connectivity options for data logging and analysis.
These features make the SIS407DN-T1-GE3 ideal for applications in manufacturing, maintenance, and other industrial fields requiring precise temperature monitoring.
Pinout
The SIS407DN-T1-GE3 is a power MOSFET from Vishay Siliconix. This device comes in a PowerPAK® SO-8 package, which typically features an 8-pin configuration.
Here is a brief overview of its key functions and pin assignments:
1. Pin Count: The SIS407DN-T1-GE3 has 8 pins.
2. Pin Functions:
- Drain (D): The device typically has multiple pins connected to the drain for better current handling and heat dissipation. In a PowerPAK SO-8, multiple pins (usually 4) are often allocated for the drain.
- Source (S): The source is connected to one or more pins, providing the path for the current to exit the transistor.
- Gate (G): The gate is usually connected to one pin and is used to control the MOSFET's operation.
3. General Function: This MOSFET is utilized for switching and amplification in electronic circuits like power management, load switching, and DC-DC converters due to its low on-resistance and efficient power handling capabilities.
Here is a brief overview of its key functions and pin assignments:
1. Pin Count: The SIS407DN-T1-GE3 has 8 pins.
2. Pin Functions:
- Drain (D): The device typically has multiple pins connected to the drain for better current handling and heat dissipation. In a PowerPAK SO-8, multiple pins (usually 4) are often allocated for the drain.
- Source (S): The source is connected to one or more pins, providing the path for the current to exit the transistor.
- Gate (G): The gate is usually connected to one pin and is used to control the MOSFET's operation.
3. General Function: This MOSFET is utilized for switching and amplification in electronic circuits like power management, load switching, and DC-DC converters due to its low on-resistance and efficient power handling capabilities.
Manufacturer
The SIS407DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturing company known for producing a wide range of electronic components. The company specializes in semiconductors and passive components, including resistors, capacitors, inductors, diodes, and transistors. Vishay supplies components to various industries such as automotive, industrial, consumer electronics, telecommunications, computing, and military/aerospace sectors. With a strong emphasis on innovation, Vishay focuses on developing products that improve performance, reliability, and efficiency in electronic applications.
Application
The SIS407DN-T1-GE3 is a N-channel MOSFET primarily used in power management applications. It is suitable for applications that require efficient switching and power conversion, such as DC-DC converters, power supplies, and motor control circuits. The MOSFET's low on-resistance and fast switching capabilities make it ideal for reducing power loss and improving efficiency in electronic devices. Additionally, it can be used in load switching and protection circuits, offering reliable performance in both industrial and consumer electronics.
Package
The SIS407DN-T1-GE3 is a MOSFET transistor with a standard surface-mount package, specifically the SOT-23 package type. This allows for easy incorporation onto PCBs in various electronic applications.
