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SIS412DN-T1-GE3
+BOMMOSFET N-CH 30V 12A PPAK1212-8
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제조업체실리콘 닉스
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제조업체 부품 #SIS412DN-T1-GE3
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패키지 PowerPAK-1212
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재고6336
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사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 12A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 24mOhm @ 7.8A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 12 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 435 pF @ 15 V |
| Power Dissipation (Max) | 3.2W (Ta), 15.6W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
개요
Description
The SIS412DN-T1-GE3 appears to be a specific semiconductor device, likely a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). These components are essential in electronic circuits for switching and amplifying signals. The model number suggests it may be part of a series with distinctive specifications tailored for particular applications such as power management, switching regulators, or motor drives.
Key features of a device like the SIS412DN-T1-GE3 might include a specific voltage and current rating, low on-resistance to minimize power loss, and fast switching capabilities. It could be used in various applications, including consumer electronics, automotive systems, and industrial equipment.
When dealing with MOSFETs or similar devices, it's crucial to ensure compatibility with the intended circuit in terms of electrical characteristics and thermal management needs. For specific details about the SIS412DN-T1-GE3, including its datasheet, electrical specifications, and application circuits, contacting the manufacturer or consulting the product documentation is recommended.
Key features of a device like the SIS412DN-T1-GE3 might include a specific voltage and current rating, low on-resistance to minimize power loss, and fast switching capabilities. It could be used in various applications, including consumer electronics, automotive systems, and industrial equipment.
When dealing with MOSFETs or similar devices, it's crucial to ensure compatibility with the intended circuit in terms of electrical characteristics and thermal management needs. For specific details about the SIS412DN-T1-GE3, including its datasheet, electrical specifications, and application circuits, contacting the manufacturer or consulting the product documentation is recommended.
Equivalent
The SIS412DN-T1-GE3 is a N-channel MOSFET. Equivalent products could include:
1. IRL3713 by Infineon
2. FDMS86252 by ON Semiconductor
3. NTMFS5C628NL by ON Semiconductor
4. BSC123N08NS3 G by Infineon
It's crucial to verify the specifications such as voltage, current, and package type to ensure compatibility. Always consult datasheets to confirm equivalence.
1. IRL3713 by Infineon
2. FDMS86252 by ON Semiconductor
3. NTMFS5C628NL by ON Semiconductor
4. BSC123N08NS3 G by Infineon
It's crucial to verify the specifications such as voltage, current, and package type to ensure compatibility. Always consult datasheets to confirm equivalence.
Features
The SIS412DN-T1-GE3 is a N-Channel MOSFET designed for efficient power management in electronic devices. Key features include:
1. Low On-Resistance: It offers a low on-resistance, which minimizes power loss and enhances efficiency in circuits.
2. High-Speed Switching: The MOSFET supports fast switching speeds, making it suitable for high-frequency applications.
3. Thermal Performance: It has excellent thermal performance, which is crucial for maintaining reliability and longevity in demanding applications.
4. Compact Package: The component comes in a compact package, ideal for space-constrained designs.
5. Robust Design: It features a robust design to withstand high voltages and currents, ensuring operation stability.
6. Applications: Commonly used in power management, load switching, and DC-DC conversion in consumer electronics and industrial equipment.
These features make the SIS412DN-T1-GE3 a versatile and reliable choice for engineers seeking efficient power control solutions.
1. Low On-Resistance: It offers a low on-resistance, which minimizes power loss and enhances efficiency in circuits.
2. High-Speed Switching: The MOSFET supports fast switching speeds, making it suitable for high-frequency applications.
3. Thermal Performance: It has excellent thermal performance, which is crucial for maintaining reliability and longevity in demanding applications.
4. Compact Package: The component comes in a compact package, ideal for space-constrained designs.
5. Robust Design: It features a robust design to withstand high voltages and currents, ensuring operation stability.
6. Applications: Commonly used in power management, load switching, and DC-DC conversion in consumer electronics and industrial equipment.
These features make the SIS412DN-T1-GE3 a versatile and reliable choice for engineers seeking efficient power control solutions.
Pinout
The SIS412DN-T1-GE3 is a dual N-channel MOSFET produced by Vishay Siliconix. It is designed for use in power management applications. The package type for this component is a PowerPAK® 1212-8, which features 8 pins in total.
The primary function of the SIS412DN-T1-GE3 is to control and switch power within circuits efficiently, with its dual N-channel configuration providing enhanced performance for high-speed and low-voltage applications. It is typically used in synchronous rectification, DC-DC converters, and other applications requiring efficient power management.
The PowerPAK® 1212-8 package provides excellent thermal performance, making it suitable for compact and high-density board designs. For more detailed information on the pin configuration and specific electrical characteristics, please refer to the manufacturer's datasheet.
The primary function of the SIS412DN-T1-GE3 is to control and switch power within circuits efficiently, with its dual N-channel configuration providing enhanced performance for high-speed and low-voltage applications. It is typically used in synchronous rectification, DC-DC converters, and other applications requiring efficient power management.
The PowerPAK® 1212-8 package provides excellent thermal performance, making it suitable for compact and high-density board designs. For more detailed information on the pin configuration and specific electrical characteristics, please refer to the manufacturer's datasheet.
Manufacturer
The SIS412DN-T1-GE3 is a product manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer known for producing a wide range of discrete semiconductors and passive electronic components. The company was founded in 1962 and has grown to become one of the largest suppliers in the electronics industry, serving markets such as automotive, industrial, consumer, telecommunications, and computing.
Vishay's product offerings include a variety of components such as resistors, capacitors, inductors, diodes, and transistors, as well as optoelectronic components and power ICs. Their products are used in numerous applications and are critical in the development and functionality of electronic devices.
The company is recognized for its innovation and commitment to quality, aiming to provide efficient and reliable components that meet the diverse needs of its customers. Vishay operates globally, with manufacturing facilities and sales offices around the world, allowing it to serve a broad customer base effectively.
Vishay's product offerings include a variety of components such as resistors, capacitors, inductors, diodes, and transistors, as well as optoelectronic components and power ICs. Their products are used in numerous applications and are critical in the development and functionality of electronic devices.
The company is recognized for its innovation and commitment to quality, aiming to provide efficient and reliable components that meet the diverse needs of its customers. Vishay operates globally, with manufacturing facilities and sales offices around the world, allowing it to serve a broad customer base effectively.
Application
The SIS412DN-T1-GE3 is a type of MOSFET transistor. Its application areas typically include power management systems, DC-DC converters, load switches, and motor control circuits. It is often used in consumer electronics, automotive applications, and industrial equipment where efficient power switching and low on-resistance are crucial. Additionally, it may be utilized in battery management systems and various power supply circuits to enhance energy efficiency and performance.
Package
The SIS412DN-T1-GE3 is a MOSFET transistor typically packaged in a surface-mount configuration. It uses a PowerPAK 1212-8 package, which is compact and designed for efficient thermal performance and low on-resistance, suitable for high-performance applications.
