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SIS488DN-T1-GE3

Name: SIS488DN-T1-GE3
Rating: 4.8 (15 reviews)

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MOSFET N-CH 40V 40A PPAK1212-8

제조업체실리콘 닉스
제조업체 부품 #SIS488DN-T1-GE3
데이터시트 SIS488DN-T1-GE3 DataSheet
패키지 PowerPAK-8
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사양

속성	가치
Package / Case	Tape & Reel (TR),Cut Tape (CT)
Series	TrenchFET®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain(Id) @ 25°C	40A (Tc)
Drive Voltage(Max Rds On Min Rds On)	4.5V, 10V
Rds On(Max) @ Id Vgs	5.5mOhm @ 20A, 10V
Vgs(th)(Max) @ Id	2.2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	32 nC @ 10 V
Vgs(Max)	±20V
Input Capacitance(Ciss)(Max) @ Vds	1330 pF @ 20 V
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8

개요

Description

The SIS488DN-T1-GE3 is a high-performance N-channel MOSFET from Vishay Siliconix, designed for power management applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 4.8 mΩ at 10 V, ensuring efficient power handling.
- High Current Rating: Supports up to 100 A (continuous) for robust performance.
- Fast Switching: Optimized for high-frequency applications like DC-DC converters and motor drives.
- Low Gate Charge (Qg): Enhances efficiency in switching circuits.
- Package: Housed in a compact PowerPAK® SO-8 for space-constrained designs.
Ideal for server power supplies, automotive systems, and industrial controls, this MOSFET balances efficiency, thermal performance, and reliability. Its GE3 suffix denotes third-generation silicon technology, offering improved performance over predecessors.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the SIS488DN-T1-GE3 (Vishay SiS488DN MOSFET) include:
- SiS482DN-T1-GE3 (Similar specs, lower current rating)
- SiS486DN-T1-GE3 (Higher current rating)
- IRLML6402TRPBF (Infineon, comparable P-channel MOSFET)
- AO3401A (Alpha & Omega, similar P-channel MOSFET)
Check datasheets for exact compatibility in your application.

Pinout

The SIS488DN-T1-GE3 is a N-channel MOSFET in a PowerPAK® SO-8 package.
- Pin Count: 8 pins (though some are internally connected for thermal/electrical performance).
- Function: Designed for power switching applications, such as DC-DC converters, motor control, and load switching.
- Key Features:
- 30V drain-source voltage (V_DS).
- Low on-resistance (R_DS(on)) for efficient power handling.
- High current capability (e.g., ~50A continuous drain current, depending on conditions).
Pins typically include Gate (G), Drain (D), and Source (S), with multiple pins for Drain/Source to reduce resistance and improve heat dissipation.
For exact pinout, refer to the datasheet (Vishay/Siliconix).

Application

The SIS488DN-T1-GE3 is a high-performance N-channel MOSFET designed for power management applications. Key application areas include:
- DC-DC Converters – Efficient voltage regulation in power supplies.
- Motor Control – Used in driver circuits for precise motor operation.
- Load Switching – Fast switching for power distribution in electronic systems.
- Battery Management – Enhances charging/discharging efficiency in portable devices.
- Automotive Electronics – Supports power control in infotainment and lighting systems.
Its low on-resistance and high-speed switching make it ideal for compact, energy-efficient designs.

Package

The SIS488DN-T1-GE3 is a DFN-8 (Dual Flat No-Lead) package. It features a compact, surface-mount design with 8 pins, optimized for high efficiency and thermal performance in power applications. The DFN-8 package is lead-free and RoHS compliant, making it suitable for modern electronic designs.