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SISS61DN-T1-GE3
+BOMMOSFET P-CH 20V 30.9/111.9A PPAK
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제조업체실리콘 닉스
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제조업체 부품 #SISS61DN-T1-GE3
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패키지 PowerPAK-1212
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재고7492
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사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® Gen III |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 30.9A (Ta), 111.9A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | 3.5mOhm @ 15A, 4.5V |
| Vgs(th)(Max) @ Id | 900mV @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 231 nC @ 10 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 8740 pF @ 10 V |
| Power Dissipation (Max) | 5W (Ta), 65.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8S |
개요
Description
- Low On-Resistance (RDS(on)): Typically 1.6 mΩ at 10V, reducing conduction losses.
- High Current Handling: Supports up to 100A continuous drain current.
- Voltage Rating: 30V, suitable for DC-DC converters, motor drives, and battery management.
- Optimized for Switching: Fast switching performance with low gate charge (Qg).
- Package: PowerPAK® SO-8, offering compact size with excellent thermal performance.
Ideal for synchronous rectification, load switching, and power distribution in industrial, automotive, and computing systems. Its GE3 suffix indicates enhanced efficiency and reliability.
For detailed specs, refer to the datasheet.
Features
- Voltage Rating: 60V
- Current Rating: 50A (continuous)
- Low On-Resistance (RDS(on)): 5.6mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Package: PowerPAK® SO-8 (compact, surface-mount design)
- Gate Charge (Qg): Low (enhances switching performance)
- AEC-Q101 Qualified: Suitable for automotive applications
- Operating Temperature: -55°C to +175°C
Ideal for DC-DC converters, motor control, and power management in automotive/industrial systems.
Pinout
Pin Functions:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connected to the load (high-side switch).
3. Source (S) – Connected to ground.
4. Exposed Pad (EP) – Thermally conductive pad for heat dissipation, typically tied to the source (S).
Key Features:
- 30V drain-source voltage (VDS)
- Low on-resistance (RDS(on)) for efficient power handling.
- Designed for high-frequency switching in power management applications.
This MOSFET is commonly used in DC-DC converters, load switches, and battery protection circuits.
Manufacturer
Vishay is a well-established company known for producing high-performance discrete semiconductors (diodes, MOSFETs, optoelectronics) and passive components (resistors, capacitors, inductors). Founded in 1962, it serves industries like automotive, industrial, computing, and consumer electronics, emphasizing innovation and reliability.
The SISS61DN-T1-GE3 is part of Vishay’s TrenchFET® Gen IV power MOSFET series, designed for efficient power management in applications like DC-DC converters and load switching.
