SISS71DN-T1-GE3

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SISS71DN-T1-GE3

+BOM

MOSFET P-CH 100V 23A PPAK1212-8S

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

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사양

속성 가치
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series ThunderFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 23A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 59mOhm @ 5A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 15 nC @ 4.5 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1050 pF @ 50 V
Power Dissipation (Max) 57W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S

개요

Description

"SISS71DN-T1-GE3" appears to be a course code or a specific program module, possibly related to a specialized academic or training program. Unfortunately, without additional context or information about the subject matter or the institution offering it, it's challenging to provide a detailed introduction to SISS71DN-T1-GE3.
If it is a course or module, the introduction would typically cover the key objectives, topics, and skills that participants are expected to learn. It might include information on the course structure, assessment methods, and any prerequisites required for enrollment.
For a precise and detailed overview, I would recommend checking the official website or program catalog of the relevant institution or organization offering this course. They would provide the most accurate and comprehensive information regarding the curriculum and goals of SISS71DN-T1-GE3.

Equivalent

The SISS71DN-T1-GE3 is a N-channel MOSFET produced by Vishay. Equivalent products from other manufacturers may include:
1. IRF7410 from Infineon Technologies/International Rectifier
2. Si2312DS from Vishay
3. BSC057N04LS from Infineon Technologies
4. NTMFS4941N from ON Semiconductor
It's crucial to compare specific parameters such as voltage, current ratings, on-resistance, and packaging to ensure compatibility in your application.

Features

The SISS71DN-T1-GE3 is a surface-mount Schottky diode produced by Vishay Siliconix. It features fast switching speeds and low forward voltage drop, making it suitable for low-power applications where efficiency is critical. The diode is designed to handle a maximum reverse voltage, typically in the range of 30-40 volts, and supports a current rating suitable for small signal applications. Its compact form factor is ideal for space-constrained designs, and it is often used in rectification, clamping, and protection circuits. The device is RoHS compliant, ensuring it meets environmental and safety standards for electronic components. The SISS71DN-T1-GE3 offers a balance of performance and reliability, making it a popular choice in various consumer electronics, automotive, and industrial applications.

Pinout

The SISS71DN-T1-GE3 is a MOSFET transistor manufactured by Vishay Siliconix. It is a single N-channel MOSFET, typically used for switching and amplifying electronic signals in various applications. The device is housed in a small, surface-mount package known as SOT-23, which generally features three pins.
1. Pin Count: The SISS71DN-T1-GE3 has three pins.
2. Pin Functions:
- Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate pin can turn the MOSFET on or off.
- Drain (D): This is the pin through which the current enters the MOSFET when it is switched on.
- Source (S): This is the pin through which the current leaves the MOSFET. It is typically connected to the ground or a negative voltage in N-channel devices.
This MOSFET is widely used in power management applications due to its efficiency and compact size. Always refer to the datasheet for specific electrical characteristics and thermal ratings.

Manufacturer

The SISS71DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company known for manufacturing discrete semiconductors and passive electronic components. Founded in 1962 by Dr. Felix Zandman, the company has grown through acquisitions and innovations to become a significant player in the electronics industry.
Vishay's product portfolio includes a wide range of components such as diodes, MOSFETs, optoelectronics, resistors, inductors, and capacitors, catering to various sectors like automotive, industrial, computing, consumer electronics, telecommunications, military, aerospace, and medical. The company focuses on providing solutions that enhance the performance and reliability of electronic systems, making it a key supplier for original equipment manufacturers (OEMs) and electronic manufacturing services (EMS) companies globally.
Vishay is recognized for its commitment to quality, innovation, and sustainability, often investing in research and development to improve product efficiency and reduce environmental impact. With facilities and sales offices across the globe, Vishay Intertechnology operates as a multinational corporation dedicated to meeting the diverse needs of the electronics market.

Application

The SISS71DN-T1-GE3 is a N-channel MOSFET widely used in various applications due to its efficiency and compact design. Common application areas include:
1. Power Management: Used in DC-DC converters and power supply circuits for efficient power regulation and distribution.
2. Motor Control: Employed in controlling motors in consumer electronics and industrial applications.
3. Switching Applications: Ideal for high-speed switching in signal and power circuits.
4. Load Switching: Utilized in automotive and industrial sectors for load control.
5. Battery Management: Applied in battery protection and charging circuits to ensure reliable operation.
Its low on-resistance and fast switching capabilities make it suitable for these diverse applications.

Package

The SISS71DN-T1-GE3 is a MOSFET transistor packaged in a SOT-23 format. This is a small, surface-mount package commonly used for electronic components in compact and high-density circuit board applications.

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