SIZ340DT-T1-GE3

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SIZ340DT-T1-GE3

+BOM

MOSFET 2N-CH 30V 30A PWRPAIR3X3

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

정품 보증

사양

속성 가치
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series PowerPAIR®, TrenchFET®
Part Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain(Id) @ 25°C 30A, 40A
Rds On(Max) @ Id Vgs 9.5mOhm @ 15.6A, 10V
Vgs(th)(Max) @ Id 2.4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 19nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 760pF @ 15V
Power - Max 16.7W, 31W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

개요

Description

The SIZ340DT-T1-GE3 is a N-channel MOSFET from Vishay, designed for high-efficiency power applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 3.4 mΩ at 10V, reducing conduction losses.
- High Current Handling: Supports up to 100A continuous drain current.
- Fast Switching: Optimized for switching regulators, motor control, and DC-DC converters.
- Robust Package: PowerPAK® SO-8 for improved thermal performance.
- Low Gate Charge (Qg): Enhances efficiency in high-frequency applications.
Ideal for automotive, industrial, and computing power systems, this MOSFET combines high performance with reliability.

Application

The SIZ340DT-T1-GE3 is a Schottky diode rectifier primarily used in:
1. Power Supplies – Efficient rectification in AC-DC converters.
2. Voltage Clamping – Protection circuits to limit voltage spikes.
3. Reverse Polarity Protection – Safeguarding sensitive electronics.
4. DC-DC Converters – High-frequency switching applications.
5. Automotive Systems – Used in power management and LED lighting.
Its low forward voltage drop and fast switching make it ideal for energy-efficient, high-speed applications.

Package

The SIZ340DT-T1-GE3 is a PowerPAK® SO-8 package type. This compact surface-mount design is optimized for high-power applications, offering efficient thermal performance and space-saving benefits. It is commonly used in power management circuits.

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