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SM8S36AHE3/2D
+BOMTVS DIODE 36VWM 58.1VC DO218AB
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제조업체비쉐이 제너럴 세미컨덕터 - 다이오드 사업부
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제조업체 부품 #SM8S36AHE3/2D
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데이터시트 SM8S36AHE3/2D DataSheet
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패키지 DO-218AB
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재고27279
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사양
| 속성 | 가치 |
| Supplier | Vishay General Semiconductor - Diodes Division |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, PAR® |
| ProductStatus | Obsolete |
| Type | Zener |
| UnidirectionalChannels | 1 |
| Voltage-ReverseStandoff(Typ) | 36V |
| Voltage-Breakdown(Min) | 40V |
| Voltage-Clamping(Max)@Ipp | 58.1V |
| Current-PeakPulse(10/1000µs) | 114A |
| Power-PeakPulse | 6600W (6.6kW) |
| PowerLineProtection | No |
| Applications | Automotive |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | DO-218AB |
개요
Description
Key features of the SM8S36AHE3/2D include a reverse standoff voltage of 36 volts, with the ability to handle a peak pulse power of 6,600 watts (6.6 kW) for a specified pulse duration. This component is unidirectional, meaning it provides protection in one direction of current flow, making it suitable for DC applications.
It is typically used in applications such as power supply lines, telecommunications, and industrial electronics. The device is housed in a DO-218AB package, which provides good thermal performance and efficient heat dissipation.
Engineers favor the SM8S36AHE3/2D for its robust performance, reliability, and compliance with industry standards, making it an essential component in enhancing circuit durability against voltage spikes.
Equivalent
1. Littelfuse SMCJ36A
2. Bourns SMCJ36A
3. ON Semiconductor SMCJ36A
4. NXP SMCJ36A
5. STMicroelectronics SMCJ36A
These components generally share similar electrical characteristics, such as breakdown voltage and power handling capability, and are used for protecting sensitive electronics from voltage spikes. Always verify the specifications to ensure compatibility with your application.
Features
1. Power Rating: It has a peak pulse power capability of up to 6,600 Watts for a 10/1,000 µs waveform, ensuring robust protection against high voltage transients.
2. Breakdown Voltage: The diode has a breakdown voltage range of 34.2 to 37.8 volts, making it suitable for a variety of circuit applications.
3. Unidirectional: It is a unidirectional device, meaning it conducts current in only one direction to protect against overvoltage events.
4. Package Type: The component is housed in a DO-218AB package, offering good thermal management and ease of mounting on circuit boards.
5. Low Clamping Voltage: It provides a low clamping voltage, which minimizes stress on protected components during transient events.
6. RoHS Compliant: The device is compliant with Restriction of Hazardous Substances (RoHS) standards, ensuring it is environmentally friendly.
These features make the SM8S36AHE3/2D ideal for safeguarding automotive and industrial applications.
Pinout
This device is packaged in an SMC (DO-214AB) package, which has two pins. The two pins are as follows:
1. Anode: One of the terminals that acts as an input for current flow. In bidirectional TVS diodes, the anode and cathode are interchangeable.
2. Cathode: The other terminal, it serves as an output for current flow. However, in bidirectional TVS devices like the SM8S36AHE3/2D, this distinction is not functionally critical as both pins can conduct in either direction.
The primary function of the SM8S36AHE3/2D is to clamp excess voltage to a safe level, thereby protecting downstream components from damage. This diode is particularly suitable for protecting power lines and high-speed data lines.
Manufacturer
Application
1. Telecommunications: Protects communication systems from lightning and ESD.
2. Consumer Electronics: Safeguards devices like smartphones and tablets against electrical surges.
3. Industrial Equipment: Shields machinery and control systems from power fluctuations.
4. Automotive Electronics: Protects automotive circuits from load dump and inductive switching.
5. Power Supplies: Ensures stability by clamping overvoltage conditions.
These applications leverage its capability to absorb high-energy transients and maintain signal integrity.