SQJA82EP-T1_GE3

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SQJA82EP-T1_GE3

+BOM

MOSFET N-CH 80V 60A PPAK SO-8

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

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사양

속성 가치
Supplier Vishay Siliconix
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain(Id) @ 25°C 60A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 8.2mOhm @ 10A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 60 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 3000 pF @ 25 V
Power Dissipation (Max) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8

개요

Description

The SQJA82EP-T1_GE3 is a specific model of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Vishay Siliconix. It is designed for use in various electronic applications, particularly those requiring efficient power management and switching. This MOSFET is often utilized in circuits for its fast switching speed, low on-resistance, and high efficiency, which are critical for power conversion and regulation tasks.
The SQJA82EP-T1_GE3 typically features an N-channel configuration, facilitating the control of large current flows with minimal input power. It is commonly used in applications such as power supplies, DC-DC converters, and motor control circuits. Its compact packaging allows for integration into space-constrained designs, while its thermal and electrical characteristics ensure reliable performance under varying conditions.
This component is chosen for its robust performance, low power loss, and compact size, making it suitable for modern electronic devices that prioritize energy efficiency and compact design.

Equivalent

The SQJA82EP-T1_GE3 is a Power MOSFET from Vishay. Equivalent products typically include similar N-channel MOSFETs with comparable voltage and current ratings from other manufacturers. Possible equivalents might be Infineon's BSC080N06LS5 or ON Semiconductor's NTMFS5C604NL, depending on the specific circuit requirements. Always check the datasheets for electrical characteristics and package compatibility to ensure they match your application's needs.

Features

The SQJA82EP-T1_GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for electronic applications requiring efficient power management. Here are its key features:
1. Type: N-channel MOSFET.
2. Voltage Rating: Typically, these components have a high voltage rating, often around 20V to 60V.
3. Current Rating: They can usually handle current in the range of several amperes, often around 8A.
4. Package Type: It is commonly available in surface-mount packages such as SOT-23 or similar, facilitating easy integration into circuits.
5. RDS(on): The on-resistance is typically low, contributing to better efficiency and lower power loss during operation.
6. Fast Switching: It supports high-speed switching, suitable for applications like DC-DC converters.
7. Thermal Performance: Designed for efficient thermal management, ensuring reliable operation under various load conditions.
8. Applications: Typically used in power management, load switching, and DC-DC conversion in consumer electronics and industrial applications.
For precise details, refer to the datasheet provided by the manufacturer, Vishay Intertechnology.

Pinout

The SQJA82EP-T1_GE3 is a power MOSFET manufactured by Vishay Siliconix. It is specifically designed for use in power management applications. This MOSFET is housed in a PowerPAK® SO-8 package, which typically features an 8-pin configuration.
Key functions and specifications include:
- N-Channel MOSFET: Utilized for switching and amplification in electronic circuits.
- Low On-Resistance: Ensures efficient power conduction with minimal loss.
- High Current Capability: Suitable for applications requiring significant power handling.
- Dual Configuration: Often used in synchronous rectification and other power management scenarios.
For precise pin configuration and specific electrical parameters, refer to the datasheet provided by Vishay for the SQJA82EP-T1_GE3, as it contains detailed technical information, including pin layout and detailed electrical characteristics.

Manufacturer

The SQJA82EP-T1_GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the design, manufacture, and supply of a broad range of discrete semiconductors and passive electronic components. These components are used in various sectors, including industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Vishay’s product portfolio includes resistors, inductors, capacitors, diodes, transistors, optoelectronics, and sensors, which are integral to electronic devices and systems. The company is known for its innovation in the electronics industry and provides essential components that enhance performance and reliability in electronic equipment.

Application

The SQJA82EP-T1_GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in various electronic applications. It is typically employed in power management circuits due to its efficient switching capabilities and low on-resistance. This makes it suitable for applications such as DC-DC converters, load switches, and power supply circuits. Additionally, its compact size and thermal performance make it ideal for use in portable electronics, automotive systems, and industrial equipment where space and heat dissipation are critical considerations.

Package

The SQJA82EP-T1_GE3 is a power MOSFET, and it comes in a PowerPAK® SO-8 package. This package type is designed to provide enhanced thermal performance, making it suitable for applications requiring efficient heat dissipation.

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