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STB45N60DM2AG
+BOMMOSFET N-CH 600V 34A D2PAK
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제조업체ST마이크로일렉트로닉스(주)
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제조업체 부품 #STB45N60DM2AG
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사양
| 속성 | 가치 |
| Series | MDmesh™ DM2 |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 34A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 90mOhm @ 17A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 56 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 2500 pF @ 100 V |
| PowerDissipation(Max) | 250W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-263 (D2PAK) |
| Package/Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| BaseProductNumber | STB45 |
개요
Description
The device is typically used in applications such as switch-mode power supplies (SMPS), induction heating, and motor control, where high efficiency and thermal performance are critical. It comes in a TO-220 package, facilitating easy heat dissipation and mounting.
The STB45N60DM2AG is also noted for its fast switching capabilities, which contribute to improved performance in PWM (Pulse Width Modulation) applications. Overall, this MOSFET is ideal for engineers looking for reliable, efficient, and robust solutions in power electronics.
Equivalent
1. IRF840
2. STP45NF60
3. FQP45N60
4. MTP45N60
5. BTA45-600V
Always verify the specifications for your specific application to ensure compatibility.
Features
1. Voltage Rating: 600V, suitable for high-voltage applications.
2. Current Rating: 45A, allowing for high current handling.
3. RDS(on): Low on-state resistance typically around 0.45 ohms, reducing power losses.
4. Gate Threshold Voltage (Vgs(th)): 2-4V, enabling efficient switching with lower gate drive voltages.
5. Fast Switching Speed: Designed for rapid switching, enhancing performance in power electronics.
6. Thermal Resistance: Excellent thermal performance with a low junction-to-case thermal resistance of 0.35°C/W.
7. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
8. Applications: Ideal for switch-mode power supplies, motor control, and DC-DC converters.
Overall, the STB45N60DM2AG is engineered for reliability and efficiency in demanding electronic applications.
Pinout
1. Gate (G): Controls the MOSFET; applies voltage to turn the device on or off.
2. Drain (D): Connects to the load; carries the main current when the MOSFET is on.
3. Source (S): Common reference point; usually connected to ground in N-channel configurations.
4. Body Diode: Internal structure that allows current to flow in the reverse direction when the MOSFET is off.
5. Thermal Pad: Provides heat dissipation to improve thermal performance.
This MOSFET is designed for high-voltage applications, with a maximum drain-source voltage of 600V and a continuous drain current of up to 45A, making it suitable for power conversion and switching applications.
Manufacturer
Application
1. Switching Power Supplies: For efficient power conversion in industrial and consumer electronics.
2. Motor Control: In driving DC motors and brushless motors for robotics and HVAC systems.
3. Inverter Circuits: Used in renewable energy systems like solar inverters and uninterruptible power supplies (UPS).
4. Lighting Control: In LED drivers and lighting systems for efficient dimming and control.
5. Automotive Applications: In electric vehicles for power management and control systems.
These applications leverage its high voltage rating, low on-resistance, and fast switching capabilities.