STB45N60DM2AG

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STB45N60DM2AG

+BOM

MOSFET N-CH 600V 34A D2PAK

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사양

속성 가치
Series MDmesh™ DM2
PartStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 34A (Tc)
DriveVoltage(MaxRdsOn,MinRdsOn) 10V
RdsOn(Max)@Id,Vgs 90mOhm @ 17A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 56 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 2500 pF @ 100 V
PowerDissipation(Max) 250W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
MountingType Surface Mount
SupplierDevicePackage TO-263 (D2PAK)
Package/Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BaseProductNumber STB45

개요

Description

The STB45N60DM2AG is a high-performance N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 45A, making it suitable for high-voltage and high-current switching applications. This MOSFET is characterized by low on-resistance (R_DS(on)), which reduces power loss and increases efficiency in circuits.
The device is typically used in applications such as switch-mode power supplies (SMPS), induction heating, and motor control, where high efficiency and thermal performance are critical. It comes in a TO-220 package, facilitating easy heat dissipation and mounting.
The STB45N60DM2AG is also noted for its fast switching capabilities, which contribute to improved performance in PWM (Pulse Width Modulation) applications. Overall, this MOSFET is ideal for engineers looking for reliable, efficient, and robust solutions in power electronics.

Equivalent

The STB45N60DM2AG is an N-channel MOSFET with a 600V rating and a current capacity of 45A. Equivalent products include:
1. IRF840
2. STP45NF60
3. FQP45N60
4. MTP45N60
5. BTA45-600V
Always verify the specifications for your specific application to ensure compatibility.

Features

The STB45N60DM2AG is a N-channel MOSFET designed for high-efficiency switching applications. Its key features include:
1. Voltage Rating: 600V, suitable for high-voltage applications.
2. Current Rating: 45A, allowing for high current handling.
3. RDS(on): Low on-state resistance typically around 0.45 ohms, reducing power losses.
4. Gate Threshold Voltage (Vgs(th)): 2-4V, enabling efficient switching with lower gate drive voltages.
5. Fast Switching Speed: Designed for rapid switching, enhancing performance in power electronics.
6. Thermal Resistance: Excellent thermal performance with a low junction-to-case thermal resistance of 0.35°C/W.
7. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
8. Applications: Ideal for switch-mode power supplies, motor control, and DC-DC converters.
Overall, the STB45N60DM2AG is engineered for reliability and efficiency in demanding electronic applications.

Pinout

The STB45N60DM2AG is a N-channel MOSFET from STMicroelectronics. It features a pin count of 5. The functions of the pins are as follows:
1. Gate (G): Controls the MOSFET; applies voltage to turn the device on or off.
2. Drain (D): Connects to the load; carries the main current when the MOSFET is on.
3. Source (S): Common reference point; usually connected to ground in N-channel configurations.
4. Body Diode: Internal structure that allows current to flow in the reverse direction when the MOSFET is off.
5. Thermal Pad: Provides heat dissipation to improve thermal performance.
This MOSFET is designed for high-voltage applications, with a maximum drain-source voltage of 600V and a continuous drain current of up to 45A, making it suitable for power conversion and switching applications.

Manufacturer

The STB45N60DM2AG is manufactured by STMicroelectronics, a global semiconductor company. Founded in 1987, STMicroelectronics is headquartered in Geneva, Switzerland, and is a leader in the design and production of a wide range of electronic components and systems. The company specializes in various sectors, including automotive, industrial, consumer electronics, and communication equipment. STMicroelectronics is known for its innovative solutions in power management, microcontrollers, sensors, and analog devices, among others. The STB45N60DM2AG is a power MOSFET designed for applications requiring high efficiency and performance, particularly in power management and conversion systems.

Application

The STB45N60DM2AG is a high-voltage N-channel MOSFET primarily used in power applications. Its key application areas include:
1. Switching Power Supplies: For efficient power conversion in industrial and consumer electronics.
2. Motor Control: In driving DC motors and brushless motors for robotics and HVAC systems.
3. Inverter Circuits: Used in renewable energy systems like solar inverters and uninterruptible power supplies (UPS).
4. Lighting Control: In LED drivers and lighting systems for efficient dimming and control.
5. Automotive Applications: In electric vehicles for power management and control systems.
These applications leverage its high voltage rating, low on-resistance, and fast switching capabilities.

Package

The STB45N60DM2AG is packaged in a TO-220 form factor. This package type is commonly used for power transistors due to its excellent thermal performance and ease of mounting on heatsinks.

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