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STB6NK90ZT4
+BOMMOSFET N-CH 900V 5.8A D2PAK
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제조업체ST마이크로일렉트로닉스(주)
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제조업체 부품 #STB6NK90ZT4
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데이터시트 STB6NK90ZT4 DataSheet
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패키지 TO-263-3
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사양
| 속성 | 가치 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 900 V |
| Current-ContinuousDrain(Id)@25°C | 5.8A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2Ohm @ 2.9A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 60.5 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1350 pF @ 25 V |
| PowerDissipation(Max) | 140W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
개요
Description
The STB6NK90ZT4 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) developed by STMicroelectronics. It is designed for use in various electronic applications, including power management and switching. Key features of the STB6NK90ZT4 include a maximum drain-source voltage (V_DS) of 900V and a continuous drain current (I_D) of approximately 5.8A, making it suitable for high-voltage and medium-current applications.
This MOSFET is part of the MDmesh™ K5 series, which is known for its enhanced efficiency and low on-resistance, leading to reduced power loss and improved thermal performance. The device is housed in a DPAK package, which is compact and facilitates efficient heat dissipation.
The STB6NK90ZT4 is commonly used in applications such as power converters, motor control circuits, and other high-efficiency power management systems. Its robust design and reliable performance make it a popular choice for engineers looking to optimize energy efficiency in electronic devices.
This MOSFET is part of the MDmesh™ K5 series, which is known for its enhanced efficiency and low on-resistance, leading to reduced power loss and improved thermal performance. The device is housed in a DPAK package, which is compact and facilitates efficient heat dissipation.
The STB6NK90ZT4 is commonly used in applications such as power converters, motor control circuits, and other high-efficiency power management systems. Its robust design and reliable performance make it a popular choice for engineers looking to optimize energy efficiency in electronic devices.
Equivalent
The STB6NK90ZT4 is an N-channel MOSFET. Equivalent products include:
1. IRFB9N65A - Infineon
2. FQA9N90C - ON Semiconductor
3. IXTH10N85 - IXYS
4. APT10N80B - Microchip
5. STW9NK90Z - STMicroelectronics
Ensure the equivalent matches your specific application requirements in terms of voltage, current, and package. Always verify datasheets for compatibility.
1. IRFB9N65A - Infineon
2. FQA9N90C - ON Semiconductor
3. IXTH10N85 - IXYS
4. APT10N80B - Microchip
5. STW9NK90Z - STMicroelectronics
Ensure the equivalent matches your specific application requirements in terms of voltage, current, and package. Always verify datasheets for compatibility.
Features
The STB6NK90ZT4 is an N-channel MOSFET designed for various electronic applications. Key features include:
1. Voltage & Current Ratings: It can handle a drain-source voltage (V_DS) of up to 900V and a continuous drain current (I_D) of 5.5A, making it suitable for high-voltage applications.
2. R_DS(on) Resistance: The on-resistance is typically low, enhancing efficiency by reducing power losses when the MOSFET is in the 'on' state.
3. Gate Threshold Voltage: It has a threshold voltage range, which is the gate-source voltage (V_GS) required to start the conduction between drain and source.
4. Package Type: Usually available in a TO-220 package, which provides good thermal performance and is suitable for through-hole mounting.
5. Fast Switching: The device offers fast switching capabilities, which is beneficial for high-frequency applications.
6. Temperature Range: Operates efficiently over a wide temperature range, making it versatile for different environments.
These features make the STB6NK90ZT4 a reliable choice for power management, motor drives, and other high-voltage applications.
1. Voltage & Current Ratings: It can handle a drain-source voltage (V_DS) of up to 900V and a continuous drain current (I_D) of 5.5A, making it suitable for high-voltage applications.
2. R_DS(on) Resistance: The on-resistance is typically low, enhancing efficiency by reducing power losses when the MOSFET is in the 'on' state.
3. Gate Threshold Voltage: It has a threshold voltage range, which is the gate-source voltage (V_GS) required to start the conduction between drain and source.
4. Package Type: Usually available in a TO-220 package, which provides good thermal performance and is suitable for through-hole mounting.
5. Fast Switching: The device offers fast switching capabilities, which is beneficial for high-frequency applications.
6. Temperature Range: Operates efficiently over a wide temperature range, making it versatile for different environments.
These features make the STB6NK90ZT4 a reliable choice for power management, motor drives, and other high-voltage applications.
Pinout
The STB6NK90ZT4 is a N-channel MOSFET designed for high-voltage applications. It comes in a D²PAK (TO-263) package and features three pins: Gate (G), Drain (D), and Source (S).
1. Gate: This pin is responsible for controlling the ON/OFF state of the MOSFET. A voltage applied to the gate controls the conductivity between the drain and source.
2. Drain: The drain is the terminal through which the main current flows from the load.
3. Source: The source is the terminal through which the current exits the MOSFET.
The STB6NK90ZT4 is known for its ability to handle high voltage, with a maximum drain-source voltage (V_ds) of 900V, and it is commonly used in applications such as power supplies, converters, and other high-voltage circuits due to its robustness and efficiency.
1. Gate: This pin is responsible for controlling the ON/OFF state of the MOSFET. A voltage applied to the gate controls the conductivity between the drain and source.
2. Drain: The drain is the terminal through which the main current flows from the load.
3. Source: The source is the terminal through which the current exits the MOSFET.
The STB6NK90ZT4 is known for its ability to handle high voltage, with a maximum drain-source voltage (V_ds) of 900V, and it is commonly used in applications such as power supplies, converters, and other high-voltage circuits due to its robustness and efficiency.
Manufacturer
The STB6NK90ZT4 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company known for designing, developing, and manufacturing a wide range of semiconductor products. These products are utilized across various applications, including automotive, industrial, personal electronics, and communications equipment.
Founded in 1987 through the merger of two companies, SGS Microelettronica of Italy and Thomson Semiconducteurs of France, STMicroelectronics has its headquarters in Geneva, Switzerland. The company operates research and development, manufacturing, and sales offices worldwide, making it a significant player in the global semiconductor industry.
STMicroelectronics focuses on innovation and technology development, offering solutions that help to drive advancements in diverse sectors, such as smart driving, the Internet of Things (IoT), and energy management. Its product portfolio includes microcontrollers, sensors, power management systems, and other semiconductor components, catering to both consumer and industrial markets.
Founded in 1987 through the merger of two companies, SGS Microelettronica of Italy and Thomson Semiconducteurs of France, STMicroelectronics has its headquarters in Geneva, Switzerland. The company operates research and development, manufacturing, and sales offices worldwide, making it a significant player in the global semiconductor industry.
STMicroelectronics focuses on innovation and technology development, offering solutions that help to drive advancements in diverse sectors, such as smart driving, the Internet of Things (IoT), and energy management. Its product portfolio includes microcontrollers, sensors, power management systems, and other semiconductor components, catering to both consumer and industrial markets.
Application
The STB6NK90ZT4 is a N-channel MOSFET known for its high-voltage capabilities and fast switching speed. It is commonly used in applications such as power supplies, motor control, lighting systems, and industrial automation. Its high voltage rating makes it suitable for use in high-power circuits, including switch-mode power supplies (SMPS), DC-DC converters, and as a switch in relay replacement. Additionally, its efficiency and reliability make it a good choice for applications requiring efficient energy management and thermal performance, such as electric vehicle systems and renewable energy solutions.
Package
The STB6NK90ZT4 is a power MOSFET with a DPAK (TO-252) package type. This package is commonly used for surface-mount devices, offering good thermal performance and compact size suitable for high-density applications.
