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STF10N60M2
+BOMMOSFET N-CH 600V 7.5A TO220FP
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제조업체ST마이크로일렉트로닉스(주)
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제조업체 부품 #STF10N60M2
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사양
| 속성 | 가치 |
| Series | MDmesh™ II Plus |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 7.5A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 600mOhm @ 4A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 13.5 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 400 pF @ 100 V |
| PowerDissipation(Max) | 25W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
| Package/Case | TO-220-3 Full Pack |
| BaseProductNumber | STF10 |
개요
Description
The STF10N60M2 is a high-performance N-channel MOSFET designed for use in high-voltage applications, particularly in power electronics and switching circuits. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 10A, making it suitable for various power conversion and control tasks.
This MOSFET is known for its low on-resistance (R_DS(on)), which reduces power loss and improves efficiency in applications like power supplies, motor drives, and inverters. The device is typically packaged in a TO-220 form factor, allowing for efficient heat dissipation.
With a fast switching speed, the STF10N60M2 is suitable for high-frequency applications, enabling it to switch on and off rapidly, which is essential for minimizing switching losses. Its robust design ensures reliability in demanding environments. Overall, the STF10N60M2 is a versatile component for engineers looking to enhance performance in high-voltage systems.
This MOSFET is known for its low on-resistance (R_DS(on)), which reduces power loss and improves efficiency in applications like power supplies, motor drives, and inverters. The device is typically packaged in a TO-220 form factor, allowing for efficient heat dissipation.
With a fast switching speed, the STF10N60M2 is suitable for high-frequency applications, enabling it to switch on and off rapidly, which is essential for minimizing switching losses. Its robust design ensures reliability in demanding environments. Overall, the STF10N60M2 is a versatile component for engineers looking to enhance performance in high-voltage systems.
Equivalent
The STF10N60M2 is a N-channel MOSFET with a voltage rating of 600V and a current rating of 10A. Equivalent products include the STP10NK60Z, IRF840, and FQA10N60. When selecting alternatives, ensure that they match or exceed the voltage, current ratings, and R_DS(on) specifications for your specific application. Always refer to datasheets to confirm compatibility.
Features
The STF10N60M2 is a high-voltage N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: 600V, making it suitable for high-voltage applications.
2. Current Rating: 10A continuous drain current, allowing for efficient power handling.
3. RDS(on): Low on-state resistance (typically around 0.15 ohms), which minimizes conduction losses.
4. Gate-Source Voltage: Maximum rating of ±20V, providing flexibility in control.
5. Fast Switching: Designed for high-speed operation, ideal for switching power supplies and converters.
6. Thermal Performance: Enhanced thermal stability with a junction-to-case thermal resistance of 0.5°C/W.
7. Package: Available in TO-220 and DPAK packages, facilitating easy integration into various circuits.
These characteristics make the STF10N60M2 suitable for applications such as industrial drives, power supplies, and audio amplifiers, where both efficiency and reliability are critical.
1. Voltage Rating: 600V, making it suitable for high-voltage applications.
2. Current Rating: 10A continuous drain current, allowing for efficient power handling.
3. RDS(on): Low on-state resistance (typically around 0.15 ohms), which minimizes conduction losses.
4. Gate-Source Voltage: Maximum rating of ±20V, providing flexibility in control.
5. Fast Switching: Designed for high-speed operation, ideal for switching power supplies and converters.
6. Thermal Performance: Enhanced thermal stability with a junction-to-case thermal resistance of 0.5°C/W.
7. Package: Available in TO-220 and DPAK packages, facilitating easy integration into various circuits.
These characteristics make the STF10N60M2 suitable for applications such as industrial drives, power supplies, and audio amplifiers, where both efficiency and reliability are critical.
Pinout
The STF10N60M2 is an N-channel MOSFET designed for power applications. It features a TO-220 package with a pin count of three. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the MOSFET operation. Applying a voltage to this pin allows current to flow between the drain and source.
2. Drain (D): This pin connects to the load. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the circuit. It completes the circuit when the MOSFET is activated.
The STF10N60M2 is rated for 10A continuous current and a maximum drain-source voltage of 600V, making it suitable for applications like switch mode power supplies and motor drives.
1. Gate (G): This pin controls the MOSFET operation. Applying a voltage to this pin allows current to flow between the drain and source.
2. Drain (D): This pin connects to the load. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the circuit. It completes the circuit when the MOSFET is activated.
The STF10N60M2 is rated for 10A continuous current and a maximum drain-source voltage of 600V, making it suitable for applications like switch mode power supplies and motor drives.
Manufacturer
The STF10N60M2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of electronic components, including integrated circuits, sensors, and power management devices. The company serves various markets such as automotive, industrial, personal electronics, and communication equipment. Established in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is known for its innovative technologies and commitment to sustainability. They are a key player in the semiconductor industry, providing solutions that enhance energy efficiency and performance across diverse applications.
Application
The STF10N60M2 is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its key areas include:
1. Switching Power Supplies: Enhancing efficiency in AC-DC converters and DC-DC converters.
2. Motor Control: Used in inverter circuits for driving electric motors, particularly in industrial automation and electric vehicles.
3. Lighting Systems: Employed in LED drivers and ballast circuits for efficient light management.
4. High-Frequency Applications: Suitable for RF amplifiers and other high-frequency switching applications.
5. Power Management: Utilized in power management systems for consumer electronics and industrial equipment.
Its high voltage and current ratings make it versatile for various power applications.
1. Switching Power Supplies: Enhancing efficiency in AC-DC converters and DC-DC converters.
2. Motor Control: Used in inverter circuits for driving electric motors, particularly in industrial automation and electric vehicles.
3. Lighting Systems: Employed in LED drivers and ballast circuits for efficient light management.
4. High-Frequency Applications: Suitable for RF amplifiers and other high-frequency switching applications.
5. Power Management: Utilized in power management systems for consumer electronics and industrial equipment.
Its high voltage and current ratings make it versatile for various power applications.
Package
The STF10N60M2 is typically packaged in a TO-220 format. This package type is known for its good thermal performance and ease of mounting, making it suitable for high-power applications.
