STF18NM60N

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STF18NM60N

+BOM

MOSFET N-CH 600V 13A TO220FP

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  • 데이터시트 STF18NM60N DataSheet

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사양

속성 가치
Series MDmesh™ II
PartStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 13A (Tc)
DriveVoltage(MaxRdsOn,MinRdsOn) 10V
RdsOn(Max)@Id,Vgs 285mOhm @ 6.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 35 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 1000 pF @ 50 V
PowerDissipation(Max) 30W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220FP
Package/Case TO-220-3 Full Pack
BaseProductNumber STF18

개요

Description

The STF18NM60N is a high-voltage N-channel MOSFET designed for power switching applications. It features a voltage rating of 600V and a continuous drain current of up to 18A, making it suitable for use in various power electronics applications, including power supplies, motor drives, and inverters. With a low on-resistance (R_DS(on)), it minimizes conduction losses, enhancing overall efficiency.
This MOSFET also has a fast switching speed, which is beneficial for high-frequency applications. Its thermal performance is optimized with a maximum junction temperature of 150°C, allowing for reliable operation under demanding conditions. The device is housed in a TO-220 package, providing ease of heat dissipation.
Key specifications include a gate threshold voltage typically ranging from 2V to 4V and a maximum gate-source voltage of ±20V. The STF18NM60N is ideal for designers looking for a robust, efficient solution for high-voltage switching applications.

Equivalent

The STF18NM60N is an N-channel MOSFET with a voltage rating of 600V and a current rating of 18A. Equivalent products include the STP18NM60, IRF840, and MTP18N60E. Always verify specific parameters like R_DS(on), gate charge, and thermal performance before substituting.

Features

The STF18NM60N is an N-channel MOSFET designed for high-voltage applications. Key features include:
- Voltage Rating: Capable of withstanding a maximum drain-source voltage (Vds) of 600V.
- Current Rating: It can handle a continuous drain current (Id) of up to 18A, making it suitable for various power applications.
- Rds(on): Low on-resistance of approximately 0.25 ohms at a gate-source voltage (Vgs) of 10V, which enhances efficiency by reducing conduction losses.
- Thermal Resistance: Features a low thermal resistance, allowing for better heat dissipation and reliability in power circuits.
- Switching Speed: Fast switching capabilities suitable for high-frequency applications.
- Package Type: Available in TO-220 and DPAK packages, facilitating easy mounting and integration into circuits.
These features make the STF18NM60N ideal for use in power supplies, motor drives, and other high-voltage switching applications.

Pinout

The STF18NM60N is a N-channel MOSFET designed for high voltage applications. It features a TO-220 package, which typically has three pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or a lower potential in the circuit. It serves as the return path for the current flowing from the drain.
The STF18NM60N is rated for a maximum drain-source voltage (V_DS) of 600V and can handle a continuous drain current (I_D) of up to 18A, making it suitable for various power management applications.

Manufacturer

The STF18NM60N is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics designs, develops, manufactures, and markets a wide range of semiconductor solutions, including microcontrollers, analog devices, and power management components. The company serves various sectors such as automotive, industrial, personal electronics, and communication.
STMicroelectronics is known for its commitment to innovation and sustainability, focusing on developing technologies that enhance energy efficiency and improve performance across different applications. The STF18NM60N itself is a high-voltage N-channel MOSFET designed for power applications, showcasing the company's expertise in power management solutions. The company operates worldwide, providing products that cater to the growing demands of modern electronics and smart technologies.

Application

The STF18NM60N is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its main application areas include:
1. Switching Power Supplies: Utilized in DC-DC converters for efficient power management.
2. Motor Drives: Employed in industrial and automotive motor control systems for driving electric motors.
3. Inverters: Applied in renewable energy systems, such as solar inverters and UPS systems.
4. Lighting Control: Used in LED drivers and dimmers for efficient lighting solutions.
5. Audio Amplifiers: Integrated into audio power amplifiers for high-performance sound systems.
Its high voltage and current handling capabilities make it suitable for these applications.

Package

The STF18NM60N is typically packaged in a TO-220 format. This package type features a metal tab for heat dissipation and is designed for high-power applications, allowing efficient thermal management and easy mounting on heatsinks.

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