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STGD18N40LZT4

Name: STGD18N40LZT4
Rating: 4.8 (15 reviews)

+BOM

IGBT 420V 25A 125W DPAK

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제조업체 부품 #STGD18N40LZT4
데이터시트 STGD18N40LZT4 DataSheet
패키지 TO-252-3
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사양

속성	가치
Package / Case	Tape & Reel (TR),Cut Tape (CT)
Series	Automotive, AEC-Q101, PowerMESH™
Part Status	Active
Voltage - Collector Emitter Breakdown(Max)	420 V
Current - Collector(Ic)(Max)	25 A
Current - Collector Pulsed(Icm)	40 A
Vce(on)(Max) @ Vge Ic	1.7V @ 4.5V, 10A
Power - Max	125 W
Input Type	Logic
Gate Charge	29 nC
Td(on / off) @ 25°C	650ns/13.5µs
Test Condition	300V, 10A, 5V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount

개요

Description

The STGD18N40LZT4 is an N-channel 400V, 18A power MOSFET from STMicroelectronics, designed for high-efficiency switching applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 0.22Ω, reducing conduction losses.
- Fast Switching: Optimized for high-frequency operations like SMPS, lighting, and motor control.
- Avalanche-Rugged: Enhanced reliability under high-energy stress.
- Low Gate Charge (Qg): Improves switching efficiency.
- TO-252 (DPAK) Package: Compact and suitable for space-constrained designs.
Ideal for AC-DC converters, inverters, and industrial power systems, it balances performance and thermal management. Always refer to the datasheet for detailed specs.

Equivalent

Equivalent products to the STGD18N40LZT4 (600V, 18A, N-channel MOSFET) include:
- STP18N40LZ (STMicroelectronics)
- IRF840 (Infineon)
- FQP18N40 (ON Semiconductor)
- IXFH18N40 (IXYS)
These alternatives offer similar voltage/current ratings but verify datasheets for exact specs.

Features

The STGD18N40LZT4 is a 600V, 18A N-channel Power MOSFET with key features:
- Low On-Resistance (RDS(on)): 0.22Ω (typ.) @ 10V, reducing conduction losses.
- Fast Switching: Optimized for high-efficiency applications.
- Low Gate Charge (Qg): Enhances switching performance.
- Avalanche Energy Rated: Improves ruggedness in inductive loads.
- Low Input Capacitance (Ciss): Reduces drive requirements.
- TO-252 (DPAK) Package: Compact, surface-mount design for space-constrained applications.
- Applications: SMPS, motor drives, lighting, and industrial systems.
Its high voltage rating and low power dissipation make it suitable for energy-efficient designs.

Manufacturer

The STGD18N40LZT4 is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland.
STMicroelectronics specializes in designing and producing a wide range of semiconductor products, including power MOSFETs, microcontrollers, sensors, and analog ICs. The company serves industries like automotive, industrial, consumer electronics, and IoT.
The STGD18N40LZT4 is a 600V, 18A power MOSFET, part of ST’s MDmesh™ DM2 series, optimized for high-efficiency switching applications.
STMicroelectronics is known for innovation in energy-efficient and high-performance semiconductor solutions.

Application

The STGD18N40LZT4 is a 400V, 18A N-channel MOSFET, ideal for high-efficiency power applications. Key application areas include:
- Switched-Mode Power Supplies (SMPS) – Used in AC-DC and DC-DC converters.
- Motor Control – Drives motors in industrial and automotive systems.
- Lighting Solutions – Supports LED drivers and ballasts.
- Renewable Energy – Used in solar inverters and power management.
- Industrial Automation – Powers relays, solenoids, and inductive loads.
Its low on-resistance (RDS(on)) and fast switching make it suitable for energy-efficient designs.

Package

The STGD18N40LZT4 is a Power MOSFET housed in a TO-252 (DPAK) surface-mount package. This package is compact, suitable for high-power applications, and features good thermal performance with an exposed pad for heat dissipation. It is commonly used in switching power supplies, motor control, and other high-efficiency circuits.