STGW45HF60WD

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STGW45HF60WD

+BOM

IGBT 600V 70A 250W TO247

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

정품 보증

사양

속성 가치
Package Tube
ProductStatus Obsolete
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 70 A
Current-CollectorPulsed(Icm) 150 A
Vce(on)(Max)@VgeIc 2.5V @ 15V, 30A
Power-Max 250 W
SwitchingEnergy 300µJ (on), 330µJ (off)
InputType Standard
GateCharge 160 nC
Td(on/off)@25°C 30ns/145ns
TestCondition 400V, 30A, 6.8Ohm, 15V
ReverseRecoveryTime(trr) 55 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

개요

Description

The STGW45HF60WD is a high-performance, ultrafast dual diode module manufactured by STMicroelectronics, designed for applications requiring efficient and reliable power rectification. It features two diodes in a single package, each capable of handling high current and voltage, making it suitable for applications in power supplies, inverters, and motor drives.
Key specifications include a repetitive peak reverse voltage (VRRM) of 600V and a continuous forward current (IF) of 45A per diode at 90°C. The device is optimized for fast recovery with a reverse recovery time (trr) of typically 35 ns, which minimizes energy loss and improves efficiency in high-frequency operations.
Packaged in the TO-247, the STGW45HF60WD provides excellent thermal performance and ease of mounting. Its design ensures low forward voltage drop and high surge current capability, enhancing system reliability and performance.
Overall, the STGW45HF60WD is ideal for power applications requiring robust performance, fast switching, and a compact form factor, meeting the needs of modern electronic systems with demanding power requirements.

Equivalent

The STGW45HF60WD is a 600V, 45A IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics. Equivalent products include:
1. IRG4PC50W from Infineon Technologies: 600V, 47A IGBT.
2. FGH40N60SFD from ON Semiconductor: 600V, 40A IGBT.
3. GT40J325 from Toshiba: 600V, 40A IGBT.
These equivalents might vary slightly in specifications, so it's crucial to verify parameters with datasheets for compatibility in specific applications.

Features

The STGW45HF60WD is an IGBT transistor designed for power applications, featuring the following key specifications:
1. Type: IGBT (Insulated Gate Bipolar Transistor).
2. Voltage Rating: 600V - suitable for medium to high voltage applications.
3. Current Rating: 60A - capable of handling moderate to high current loads.
4. Switching Speed: Offers fast switching capabilities, making it efficient for high-frequency applications.
5. Low On-State Voltage Drop: Ensures minimal power loss and improved efficiency during operation.
6. Rugged Design: Built to withstand demanding operating conditions, providing reliability and longevity.
7. Applications: Typically used in motor drives, power inverters, and general-purpose power switching.
8. Package: TO-247 - a standard package providing good thermal performance and ease of mounting.
9. Thermal Performance: Enhanced thermal characteristics allow for effective heat dissipation, crucial for maintaining performance under load.
10. Short Circuit Withstand Time: Offers protection against short circuits, enhancing device safety.
Overall, the STGW45HF60WD is designed for efficient power handling and reliability in industrial and consumer electronic applications.

Pinout

The STGW45HF60WD is an insulated gate bipolar transistor (IGBT) with a freewheeling diode, manufactured by STMicroelectronics. It typically comes in a TO-247 package. The device is used for high-power applications and features a combination of low conduction and switching losses.
In terms of pin count, the TO-247 package usually has three pins:
1. Collector (C): This is the pin where the main current enters the IGBT.
2. Gate (G): This pin is used to control the IGBT; applying a voltage here turns the device on.
3. Emitter (E): The main current exits the IGBT through this pin.
These pins facilitate the IGBT's function of switching electrical power in high-efficiency applications, making it suitable for use in inverters, motor drives, and other power electronic circuits.

Manufacturer

The STGW45HF60WD is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a range of semiconductor products. These products are used in a variety of applications, including automotive, industrial, personal electronics, computer, and communication equipment. The company is known for its innovation in microelectronics and integrated circuits, providing solutions that enable smarter driving and smarter factories, as well as the Internet of Things and connectivity. STMicroelectronics operates worldwide and focuses on sustainability and the development of energy-efficient technologies.

Application

The STGW45HF60WD is a high-speed IGBT (Insulated Gate Bipolar Transistor) designed for high efficiency and fast switching applications. Key application areas include:
1. Inverters: Used in motor drives and photovoltaic inverters for efficient energy conversion.
2. Welding Equipment: Provides reliable performance under heavy-duty cycles.
3. Uninterruptible Power Supplies (UPS): Enhances power management and reliability.
4. Industrial Power Supplies: Ideal for high-frequency power conversion.
5. Induction Heating: Supports applications requiring rapid switching.
6. Switch-Mode Power Supplies (SMPS): Improves performance in power conversion systems.
These applications benefit from its low loss and high-speed switching characteristics.

Package

The STGW45HF60WD is an IGBT (Insulated-Gate Bipolar Transistor) and typically comes in a TO-247 package. The TO-247 is a type of power package used for high-power semiconductors, providing efficient heat dissipation and facilitating easy mounting on heatsinks.

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