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STGWA40H120DF2
+BOMTRENCH GATE IGBT TO247 PKG
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제조업체ST마이크로일렉트로닉스(주)
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제조업체 부품 #STGWA40H120DF2
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데이터시트 STGWA40H120DF2 DataSheet
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패키지 TO-247
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사양
| 속성 | 가치 |
| Package / Case | Tube |
| Part Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown(Max) | 1200 V |
| Current - Collector(Ic)(Max) | 80 A |
| Current - Collector Pulsed(Icm) | 160 A |
| Vce(on)(Max) @ Vge Ic | 2.6V @ 15V, 40A |
| Power - Max | 468 W |
| Switching Energy | 1mJ (on), 1.32mJ (off) |
| Input Type | Standard |
| Gate Charge | 158 nC |
| Td(on / off) @ 25°C | 18ns/152ns |
| Test Condition | 600V, 40A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 488 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
개요
Description
The STGWA40H120DF2 is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This component is designed for use in applications requiring efficient switching and low conduction losses. Featuring a 1200V blocking voltage and a 40A current rating, it offers robust performance in demanding environments. The IGBT is part of the H-series, which is known for improved switching speed and reduced power dissipation, making it suitable for applications like motor drives, power converters, and industrial control systems.
One of the key advantages of the STGWA40H120DF2 is its low on-state voltage drop, which enhances overall efficiency by minimizing power loss during operation. It also includes a fast recovery diode, further optimizing its performance in high-frequency applications. The device is designed to operate at high temperatures, providing reliability and longevity under tough conditions. Its TO-247 package ensures ease of integration into existing systems, providing a compact and robust solution for power management needs.
One of the key advantages of the STGWA40H120DF2 is its low on-state voltage drop, which enhances overall efficiency by minimizing power loss during operation. It also includes a fast recovery diode, further optimizing its performance in high-frequency applications. The device is designed to operate at high temperatures, providing reliability and longevity under tough conditions. Its TO-247 package ensures ease of integration into existing systems, providing a compact and robust solution for power management needs.
Equivalent
The STGWA40H120DF2 is a 1200V, 40A IGBT from STMicroelectronics. Equivalent products from other manufacturers include:
1. Infineon: IKW40N120H3
2. ON Semiconductor: FGA40N120ANTD
3. Mitsubishi: CM40DY-24A
These listed parts offer similar voltage and current ratings and are designed for high-speed switching applications. Always verify parameters like switching speed and thermal characteristics to ensure they meet your specific application needs.
1. Infineon: IKW40N120H3
2. ON Semiconductor: FGA40N120ANTD
3. Mitsubishi: CM40DY-24A
These listed parts offer similar voltage and current ratings and are designed for high-speed switching applications. Always verify parameters like switching speed and thermal characteristics to ensure they meet your specific application needs.
Features
The STGWA40H120DF2 is an IGBT (Insulated Gate Bipolar Transistor) designed for high-performance applications. It features a voltage rating of 1200V and a current capacity of 40A, making it suitable for high-voltage and high-current environments. The key features of this component include low on-state voltage drop, which enhances its efficiency by reducing power loss during operation. Additionally, it offers fast switching capabilities that improve performance in applications requiring rapid current changes. The device is also designed with a low saturation voltage and a high-speed soft recovery antiparallel diode, which further optimizes its efficiency and reduces electromagnetic interference. The STGWA40H120DF2 is often employed in industrial applications, including motor drives, power converters, and inverters. Its robust design and thermal stability make it suitable for demanding operational conditions.
Pinout
The STGWA40H120DF2 is an Insulated Gate Bipolar Transistor (IGBT) with the following characteristics:
- Pin Count: The STGWA40H120DF2 is typically housed in a TO-247 package, which usually has 3 pins.
- Pin Functionality:
1. Collector (C): This is the input terminal where the load current enters the IGBT.
2. Emitter (E): This terminal allows the load current to exit the IGBT. It is often connected to the ground or negative side of the load.
3. Gate (G): This terminal is used to control the IGBT's operation. A voltage applied to the gate modulates the conductivity between the collector and emitter.
This IGBT model is designed for high-voltage and high-current applications, and it is often used in power electronics, such as inverters, motor drives, and power supplies. The STGWA40H120DF2 offers benefits such as fast switching speed and low conduction losses.
- Pin Count: The STGWA40H120DF2 is typically housed in a TO-247 package, which usually has 3 pins.
- Pin Functionality:
1. Collector (C): This is the input terminal where the load current enters the IGBT.
2. Emitter (E): This terminal allows the load current to exit the IGBT. It is often connected to the ground or negative side of the load.
3. Gate (G): This terminal is used to control the IGBT's operation. A voltage applied to the gate modulates the conductivity between the collector and emitter.
This IGBT model is designed for high-voltage and high-current applications, and it is often used in power electronics, such as inverters, motor drives, and power supplies. The STGWA40H120DF2 offers benefits such as fast switching speed and low conduction losses.
Manufacturer
The STGWA40H120DF2 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a broad range of semiconductor products. The company serves a variety of sectors, including automotive, industrial, personal electronics, communications equipment, and computer peripherals. STMicroelectronics is known for its innovation in integrated circuits, smart power devices, and MEMS (Micro-Electro-Mechanical Systems) technology. It is one of the largest semiconductor companies in the world, with a focus on sustainable and efficient solutions.
Application
The STGWA40H120DF2 is an insulated gate bipolar transistor (IGBT) that is primarily used in high-power and high-efficiency applications. Key application areas include:
1. Motor Drives: Used in industrial motor control systems for efficient power conversion.
2. Inverters: Utilized in solar inverters, UPS systems, and power supplies for efficient energy conversion.
3. Welding Equipment: Provides precise control and efficiency in welding machines.
4. Induction Heating: Used in induction cooktops and industrial heaters for high-frequency operations.
5. Switching Power Supplies: Helps in designing compact and efficient SMPS systems.
Its high-speed switching and low saturation voltage make it suitable for these demanding applications.
1. Motor Drives: Used in industrial motor control systems for efficient power conversion.
2. Inverters: Utilized in solar inverters, UPS systems, and power supplies for efficient energy conversion.
3. Welding Equipment: Provides precise control and efficiency in welding machines.
4. Induction Heating: Used in induction cooktops and industrial heaters for high-frequency operations.
5. Switching Power Supplies: Helps in designing compact and efficient SMPS systems.
Its high-speed switching and low saturation voltage make it suitable for these demanding applications.
Package
The STGWA40H120DF2 is an IGBT (Insulated-Gate Bipolar Transistor) with a TO-247 package type. This type of package is designed for high-power applications, providing efficient thermal performance and electrical characteristics suitable for various industrial uses.
