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STGWA50IH65DF
+BOMTRENCH GATE FIELD-STOP IGBT 650
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제조업체ST마이크로일렉트로닉스(주)
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제조업체 부품 #STGWA50IH65DF
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데이터시트 STGWA50IH65DF DataSheet
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패키지 TO-247-3
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사양
| 속성 | 가치 |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | IH |
| ProductStatus | Active |
| IGBTType | Trench Field Stop |
| Voltage-CollectorEmitterBreakdown(Max) | 650 V |
| Current-Collector(Ic)(Max) | 100 A |
| Current-CollectorPulsed(Icm) | 150 A |
| Vce(on)(Max)@VgeIc | 2V @ 15V, 50A |
| Power-Max | 300 W |
| SwitchingEnergy | 284µJ (off) |
| InputType | Standard |
| GateCharge | 158 nC |
| Td(on/off)@25°C | -/260ns |
| TestCondition | 400V, 50A, 22Ohm, 15V |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
개요
Description
In such components, the model number helps in identifying the specific features like voltage and current ratings, packaging type, and intended applications. For instance, a power transistor like an IGBT (Insulated Gate Bipolar Transistor) or MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) might be used in motor drives, power supplies, or other high-power applications.
Manufacturers often publish datasheets for these components, detailing their electrical characteristics, thermal performance, and pin configurations. To fully understand the STGWA50IH65DF, it is advisable to consult the manufacturer's datasheet, which will provide comprehensive information about its specifications and potential uses.
Equivalent
Features
1. Voltage and Current Ratings: It typically supports a collector-emitter voltage (V_CE) of 650V and a current capability of around 50A, making it suitable for medium to high power applications.
2. Switching Performance: The device provides fast switching speeds, which enhance efficiency in power conversion applications like inverters, motor drives, and power supplies.
3. Low Saturation Voltage: It features a low V_CE(sat), which reduces conduction losses, improving overall system efficiency.
4. Ruggedness: It is designed to withstand high current and voltage stress, assuring reliability and durability in harsh operating conditions.
5. Thermal Performance: The device is optimized for good thermal performance, often housed in packages that support efficient heat dissipation.
6. Short Circuit and Overcurrent Protection: Some models may include integrated protection features to prevent damage under fault conditions.
These features make the STGWA50IH65DF suitable for use in industrial and consumer electronics requiring reliable and efficient power management solutions.
Pinout
The pin functions are as follows:
1. Collector (C): The collector is the main current-carrying terminal. This is the terminal through which the main current enters the IGBT.
2. Gate (G): The gate is used to control the IGBT. By applying a voltage to the gate, the device is turned on, allowing current to flow between the collector and the emitter.
3. Emitter (E): The emitter is the terminal through which the current exits the IGBT.
The STGWA50IH65DF is designed for high-efficiency and fast-switching applications, making it suitable for use in devices such as motor drives, inverters, and power supplies.
Manufacturer
Application
1. Industrial Motor Drives: Used in variable frequency drives for efficient motor control.
2. Renewable Energy: Integral in solar inverters and wind turbine systems for converting DC to AC power.
3. Power Supplies: Utilized in switch-mode power supplies for efficient energy conversion.
4. Lighting: Employed in high-efficiency lighting systems like LED drivers.
5. Electric Vehicles: Supports power management in EV chargers and traction inverters.
6. Uninterruptible Power Supplies (UPS): Ensures reliable power delivery during outages.
These applications benefit from the IGBT's high efficiency, fast switching capabilities, and robust thermal performance.