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STGWT60H65DFB
+BOMIGBT TRENCH FS 650V 80A TO-3P
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제조업체ST마이크로일렉트로닉스(주)
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제조업체 부품 #STGWT60H65DFB
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사양
| 속성 | 가치 |
| PartStatus | Active |
| IGBTType | Trench Field Stop |
| Voltage-CollectorEmitterBreakdown(Max) | 650 V |
| Current-Collector(Ic)(Max) | 80 A |
| Current-CollectorPulsed(Icm) | 240 A |
| Vce(on)(Max)@Vge,Ic | 2V @ 15V, 60A |
| Power-Max | 375 W |
| SwitchingEnergy | 1.09mJ (on), 626µJ (off) |
| InputType | Standard |
| GateCharge | 306 nC |
| Td(on/off)@25°C | 51ns/160ns |
| TestCondition | 400V, 60A, 5Ohm, 15V |
| ReverseRecoveryTime(trr) | 60 ns |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-3P-3, SC-65-3 |
| SupplierDevicePackage | TO-3P |
| BaseProductNumber | STGWT60 |
개요
Description
The MOSFET is optimized for fast switching speeds, making it suitable for high-frequency applications, including switch-mode power supplies and inverters. It also exhibits excellent thermal stability, which is crucial for reliable operation under varying temperature conditions.
Packaging in a TO-247 format allows for effective heat dissipation, further promoting its usability in high-power applications. Overall, the STGWT60H65DFB is an ideal choice for engineers seeking a reliable, efficient, and high-voltage MOSFET solution.
Equivalent
Features
1. Voltage Rating: It has a maximum voltage rating of 650V, suitable for medium to high voltage applications.
2. Current Rating: The device can handle a continuous drain current of up to 60A, making it suitable for high-power applications.
3. Low Gate Charge: This MOSFET features a low gate charge (Qg), which enhances switching efficiency and reduces power losses in applications.
4. RDS(on): It offers a low on-resistance, resulting in improved conduction efficiency and reduced heat generation.
5. Temperature Range: The device operates effectively across a wide temperature range, allowing for versatile application in challenging environments.
6. Package: Typically available in a TO-220 or similar package, facilitating easy integration into circuit designs.
These features make the STGWT60H65DFB ideal for use in power supplies, inverters, and motor control applications.
Pinout
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The output terminal where the current flows out.
3. Source (S): The terminal that connects to ground or the negative voltage in the case of a high-side switch.
4. Body Diode: Integrated within the MOSFET, allowing current flow in the reverse direction when the MOSFET is off.
This component is designed for applications requiring efficient switching at high voltages, offering low R_DS(on) and fast switching capabilities, making it suitable for use in converters, inverters, and other power electronic circuits.
Manufacturer
STMicroelectronics is known for its innovation in power technologies and is a key player in the semiconductor market, focusing on enabling energy-efficient products and applications. Their products are widely used in consumer electronics, automotive systems, and industrial automation, among other areas. The company emphasizes sustainability and aims to create solutions that address environmental challenges while enhancing technological capabilities.
Application
1. Power Supplies: Efficient switching in AC-DC converters and DC-DC converters.
2. Motor Drives: Used in inverter circuits for driving electric motors.
3. Renewable Energy: Inverters for solar power systems and wind energy.
4. Industrial Equipment: Control systems for automation and robotics.
5. Automotive: Power management in electric vehicles and hybrid systems.
Its high voltage and low on-resistance characteristics enhance performance and energy efficiency in these applications.