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STH240N10F7-6
+BOMMOSFET N-CH 100V 180A H2PAK-6
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제조업체ST마이크로일렉트로닉스(주)
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제조업체 부품 #STH240N10F7-6
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데이터시트 STH240N10F7-6 DataSheet
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사양
| 속성 | 가치 |
| Series | STripFET™ F7 |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 180A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 2.5mOhm @ 60A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 160 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 11550 pF @ 25 V |
| PowerDissipation(Max) | 300W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | H2PAK-6 |
| Package/Case | TO-263-7, D2PAK (6 Leads + Tab) |
| BaseProductNumber | STH240 |
개요
Description
This MOSFET is commonly used in areas like power supplies, motor drives, and automotive applications, where effective switching and thermal performance are crucial. The F7-6 designation indicates specific packaging and performance features, enhancing its reliability and suitability for modern electronics.
Overall, the STH240N10F7-6 is ideal for demanding applications where efficiency, thermal performance, and compact design are essential.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power applications.
2. Current Rating: With a continuous drain current (I_D) of 240A, it can handle significant loads.
3. On-Resistance: The low on-resistance (R_DS(on)) typically around 7.6 mΩ at V_GS = 10V enhances efficiency by reducing conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges between 2V and 4V, allowing for easy drive.
5. Package Type: It comes in a TO-220 package, providing good thermal performance for heat dissipation.
6. Fast Switching: Designed for high-speed switching applications, making it suitable for power supplies and motor drives.
7. High Reliability: Built with advanced technology for enhanced reliability and robustness in demanding environments.
Overall, the STH240N10F7-6 is an effective choice for power management and switching applications.
Pinout
1. Gate (G) - The control terminal used to turn the MOSFET on or off.
2. Drain (D) - The terminal through which the main current flows when the MOSFET is in the on state.
3. Source (S) - The terminal connected to the ground or the lower potential in the circuit.
The STH240N10F7-6 is designed for high-efficiency switching applications, featuring low on-resistance and fast switching speeds. It can handle high voltages and currents, making it suitable for power management applications in various electronic devices.
Manufacturer
Founded in 1987, STMicroelectronics is headquartered in Geneva, Switzerland, and is recognized for its innovation and commitment to sustainability. It plays a crucial role in the development of technologies for smart applications, including power management, microcontrollers, and sensors. The STH240N10F7-6 is a N-channel MOSFET, typically used in power conversion and switching applications, showcasing STMicroelectronics' expertise in power semiconductor technologies. The company is also known for its focus on research and development, fostering continuous advancements in the semiconductor industry.
Application
1. Power Supply: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
2. DC-DC Converters: Employed in buck, boost, and buck-boost converters to improve energy efficiency.
3. Motor Control: Acts as a switch in motor drivers for industrial and automotive applications.
4. LED Drivers: Utilized in driving high-power LED lighting systems.
5. Battery Management: Optimizes performance in battery-powered devices and electric vehicles.
Its high efficiency and fast switching capabilities make it suitable for these applications.