STH315N10F7-6

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STH315N10F7-6

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MOSFET N-CH 100V 180A H2PAK-6

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  • 데이터시트 STH315N10F7-6 DataSheet

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사양

속성 가치
Supplier STMicroelectronics
Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101, DeepGATE™, STripFET™ VII
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 180A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 2.3mOhm @ 60A, 10V
Vgs(th)(Max)@Id 4.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 180 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 12800 pF @ 25 V
PowerDissipation(Max) 315W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage H2PAK-6

개요

Description

The STH315N10F7-6 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. Manufactured by STMicroelectronics, it features a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 120A. This MOSFET is part of the Power MOSFET series, optimized for minimizing on-state resistance (R_DS(on)) and reducing conduction and switching losses.
Key specifications include a low R_DS(on) of 3.1 mΩ, which enhances power efficiency and thermal performance. The STH315N10F7-6 is suitable for DC-DC converters, power supply units, motor control systems, and other high-frequency applications where efficiency and compact size are crucial.
It is housed in a TO-220 package, supporting ease of mounting and thermal management. The device also incorporates advanced materials and design features that ensure robust performance in demanding environments, making it a reliable choice for both industrial and consumer applications.

Equivalent

The STH315N10F7-6 is an N-channel MOSFET typically used for power management applications. Equivalent products would include similar N-channel MOSFETs with comparable voltage, current ratings, and package types from other manufacturers. Examples include:
1. IRLB3034PBF from Infineon Technologies.
2. IPP037N10N3 G from Infineon Technologies.
3. FDP2532 from ON Semiconductor.
Ensure the substitutes match key parameters like V_ds, I_d, R_ds(on), and the package format to ensure compatibility.

Features

The STH315N10F7-6 is a power MOSFET from STMicroelectronics, specifically designed for applications requiring efficient power switching. Here are some key features:
1. N-channel MOSFET: It is an N-channel device, which is typically used in low-side switching applications.
2. Voltage and Current Ratings: It is designed to handle high currents and voltages, with specifications usually around 100V and a high current capacity.
3. Low On-Resistance: This MOSFET features a low R_DS(on), which minimizes conduction losses and improves efficiency.
4. Fast Switching: It offers fast switching capabilities, making it suitable for high-frequency applications.
5. Thermal Performance: Enhanced thermal performance due to optimized packaging and construction.
6. Package: Typically available in a surface-mount package like PowerFLAT or D2PAK, which aids in heat dissipation and compact design.
7. Applications: Ideal for use in power management, automotive, and industrial applications where efficient power conversion is required.
These features make the STH315N10F7-6 a reliable choice for efficient power conversion in demanding applications.

Pinout

The STH315N10F7-6 is a power MOSFET manufactured by STMicroelectronics. It is part of the N-channel MOSFET family, specifically designed for high-efficiency switching applications. This component comes in the H2PAK package.
In terms of pin count and function:
- Pin Count: The STH315N10F7-6 typically has 3 main pins.

- Pin Functions:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here is used to turn the MOSFET on or off.
2. Drain (D): This is the main current-carrying terminal. When the MOSFET is on, current flows from the drain to the source.
3. Source (S): This pin serves as the return path for the current flowing through the drain.
The STH315N10F7-6 is optimized for high-speed switching, making it suitable for applications like DC-DC converters and power management in various electronics.

Manufacturer

The STH315N10F7-6 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of electronic components and systems. The company serves various industries, including automotive, industrial, personal electronics, communications equipment, and computers. STMicroelectronics is known for its expertise in developing advanced semiconductor solutions, including microcontrollers, sensors, power management devices, and analog ICs. With a focus on innovation and sustainability, the company aims to provide technologies that enable smarter, safer, and more efficient products.

Application

The STH315N10F7-6 is a power MOSFET typically used in applications requiring high efficiency and reliability. Key application areas include:
1. Power Supply Units: Used in switch-mode power supplies (SMPS) for improved efficiency.
2. Motor Control: Suitable for motor drivers in industrial and automotive applications.
3. Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS) for energy conversion.
4. LED Drivers: Employed in high-efficiency LED lighting systems.
5. Consumer Electronics: Applied in various electronic devices to manage power distribution.
Its characteristics like low on-resistance and high-speed switching make it ideal for these applications.

Package

The STH315N10F7-6 is typically available in a TO-220 package. This package type is commonly used for power semiconductors and offers a good balance of thermal performance and size, making it suitable for various applications requiring high current and voltage handling capabilities.

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