STL24N60M2

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STL24N60M2

+BOM

MOSFET N-CH 600V 18A PWRFLAT HV

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사양

속성 가치
Supplier STMicroelectronics
Package Tape & Reel (TR),Cut Tape (CT)
Series MDmesh™ II Plus
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 210mOhm @ 9A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 29 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 1060 pF @ 100 V
PowerDissipation(Max) 125W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerFlat™ (8x8) HV

개요

Description

STL24N60M2 is STMicroelectronics’ 600 V N-channel power MOSFET designed for high‑voltage switch‑mode power conversion. It targets offline power supplies, PFC stages, motor drives, and inverters, offering a continuous drain current around 24 A with a suitable Rds(on) for switching applications. It is not a logic‑level device; a gate drive of about +10 V is typically required to fully turn it on. The part features rugged avalanche energy performance and is available in common power‑MOSFET packages (eg, D²PAK/DPAK for surface mount, TO‑220 for through‑hole). Design notes: proper heatsinking, appropriate gate drive with protection, and snubber or Zener clamp networks to limit Vgs and dv/dt are important. Always consult the latest datasheet for exact figures (Rds(on), Vgs(th), gate charge, avalanche rating, packaging) and to choose the correct variant for your topology.

Features

STL24N60M2 is a 600 V N-channel power MOSFET. Key features:
- Blocking voltage: 600 V
- Continuous drain current: around 24 A
- Low conduction loss: Rds(on) typically about 0.9–1.2 Ω (at Vgs ≈ 10 V)
- Fast switching suitable for SMPS, inverters, motor drives
- Avalanche rugged with defined EAS energy rating
- Robust body diode and dv/dt capability
- Available in common power-package options (D²PAK/DPAK and similar; through-hole variants may exist)
- RoHS compliant and suitable for industrial/automotive use
For exact numbers (Rds(on), gate charge, EAS, packaging), please refer to the current ST datasheet.

Pinout

STL24N60M2 is a 600 V N-channel enhancement-mode power MOSFET.
- Pin count: 3 pins (Gate, Drain, Source). The Drain is also the metal tab, so the package has 4 electrical connections (3 pins + tab).
- Pinout (typical): Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S). The drain tab is connected to Drain.
- Function: Used as a high-voltage switch/drive element; Gate controls conduction between Drain and Source.

Manufacturer

- Manufacturer: STMicroelectronics (ST)
- What kind of company: A global, multinational semiconductor company headquartered in Europe that designs and manufactures a wide range of semiconductor devices and electronics components (e.g., power semiconductors, sensors, MCUs) for automotive, industrial, consumer, and other markets.

Application

STL24N60M2 is a high-voltage N-channel MOSFET (600 V) suitable for switching applications. Common uses include:
- Offline switch-mode power supplies (SMPS) and PFC stages
- High-voltage DC-DC converters
- Solar/grid-tied inverters and PV power systems
- Motor drives and PWM inverters for AC/BLDC motors
- UPS and energy-storage DC/AC conversion
- Power supplies for consumer electronics
- Industrial and automotive power-electronics equipment

Package

Typical package: TO-220AB (through-hole). A surface-mount D²PAK (TO-263) version is also available.

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