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STL50DN6F7
+BOMMOSFET N-CH 60V 57A POWERFLAT
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제조업체ST마이크로일렉트로닉스(주)
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제조업체 부품 #STL50DN6F7
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데이터시트 STL50DN6F7 DataSheet
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패키지 VDFN-8
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사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | STripFET™ |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain(Id) @ 25°C | 57A (Tc) |
| Rds On(Max) @ Id Vgs | 11mOhm @ 7.5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 17nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 1035pF @ 30V |
| Power - Max | 62.5W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
개요
Description
Key features of the STL50DN6F7 include low gate charge and low on-resistance, which enhance its efficiency by reducing power loss during operation. It is encapsulated in a PowerFLAT 5x6 package, offering excellent thermal performance and a compact footprint ideal for densely packed circuit designs.
The STL50DN6F7 is commonly used in applications such as DC-DC converters, motor control, and power management systems. Its design supports high-speed switching while maintaining thermal stability, making it a popular choice among engineers for enhancing the efficiency and performance of electronic devices.
Equivalent
1. IRLB8721PBF from Infineon Technologies.
2. NTD5867NL from ON Semiconductor.
3. AON7520 from Alpha & Omega Semiconductor.
Ensure to compare datasheets for exact specifications, as equivalent products may vary in parameters like Rds(on), package type, and gate charge.
Features
1. Voltage and Current Ratings: It can handle a drain-source voltage (V_ds) of 60V and a continuous drain current (I_d) of 50A, making it suitable for medium to high power applications.
2. Low On-Resistance: The device boasts a low R_ds(on) value, which minimizes power loss and heat generation, enhancing efficiency.
3. Fast Switching Speed: The MOSFET supports fast switching, which is ideal for applications requiring quick response times, such as switching power supplies and motor drives.
4. Logic-Level Gate Drive: It operates with logic-level gate drive voltages, ensuring compatibility with low-voltage control circuits.
5. Package Type: Typically available in a PowerFLAT 5x6 package, which provides excellent thermal performance and compactness.
6. Thermal Performance: The packaging and design allow for efficient heat dissipation, which is critical for maintaining performance under high-load conditions.
These features make the STL50DN6F7 suitable for applications like DC-DC converters, motor controllers, and other power management systems.
Pinout
The MOSFET is provided in a PowerFLAT 5x6 package. Typically, these packages have a pin count of 8. However, not all of these pins are always used for electrical connections; some may be connected internally or reserved for mechanical stability.
Functionally, the STL50DN6F7 is an N-channel MOSFET with a low on-resistance (R_DS(on)), making it suitable for applications that require efficient current switching and minimal power loss. It is often used in DC-DC converters, power management systems, and load switching due to its fast switching capabilities and low gate charge.
In summary, the STL50DN6F7 has an 8-pin package with functions suited for high-efficiency switching applications in power management scenarios. For precise pin configuration and electrical characteristics, refer to the manufacturer's datasheet.
Manufacturer
Application
1. Switching Power Supplies: Utilized for its high-speed switching capabilities and efficiency.
2. DC-DC Converters: Suitable for applications requiring efficient voltage regulation and conversion.
3. Motor Control: Employed in brushless DC motor drives and other motor control circuits for its reliability.
4. Lighting: Used in LED drivers and other lighting applications for improving energy efficiency.
5. Telecommunications: Applied in telecom power management systems.
6. Automotive: Suitable for automotive applications requiring reliable power handling and efficiency.
These applications leverage the MOSFET's low on-state resistance and fast switching characteristics.