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STP10NK70ZFP
+BOMMOSFET N-CH 700V 8.6A TO220FP
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제조업체ST마이크로일렉트로닉스(주)
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제조업체 부품 #STP10NK70ZFP
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데이터시트 STP10NK70ZFP DataSheet
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패키지 TO-220FP
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사양
| 속성 | 가치 |
| Package | Tube |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 700 V |
| Current-ContinuousDrain(Id)@25°C | 8.6A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 850mOhm @ 4.5A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 90 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 2000 pF @ 25 V |
| PowerDissipation(Max) | 35W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
개요
Description
Key features of the STP10NK70ZFP include low gate charge and low on-state resistance, which contribute to efficient performance and reduced energy losses. The fast switching characteristics of this MOSFET enable it to handle rapid changes in load current effectively. Additionally, the device offers high avalanche ruggedness and a robust design, ensuring reliability under challenging operational conditions. The STP10NK70ZFP is often chosen for its balance of performance, durability, and cost-effectiveness in power electronics applications.
Equivalent
1. IRF740by International Rectifier
2. FQP11N90 by ON Semiconductor
3. IPP60R190C6by Infineon Technologies
4. FDPF12N60NZ by ON Semiconductor
Ensure compatibility by checking datasheets for parameters like breakdown voltage, current rating, RDS(on), and package type.
Features
1. VDSS Rating: It offers a drain-source voltage (VDSS) of 700V, making it suitable for high-voltage applications.
2. Current Capacity: It can handle continuous drain current up to 8A.
3. RDS(on): The typical on-resistance is 0.85 ohms, which helps minimize conduction losses.
4. Package: Available in a TO-220FP package, which provides thermal efficiency with an insulated tab for improved safety.
5. Technology: Utilizes MDmesh™ technology, enhancing dynamic performance and reducing switching losses.
6. Temperature Range: Operates effectively within a wide temperature range, typically -55°C to +150°C.
7. Applications: Ideal for use in power supplies, lighting systems, and motor drivers, among other high-efficiency applications.
8. Gate Threshold Voltage: Features a gate-source threshold voltage range to ensure stable operation and reduced gate drive requirements.
This combination of features makes the STP10NK70ZFP a versatile choice for designers looking for a robust and efficient MOSFET solution.
Pinout
1. Gate (G): This is the control terminal used to switch the MOSFET on or off. A voltage applied to the gate controls the current flow between the drain and source.
2. Drain (D): This is one of the main terminals through which the main current flows when the MOSFET is in the "on" state.
3. Source (S): This terminal acts as the return path for the current flowing through the drain when the MOSFET is conducting.
The STP10NK70ZFP is designed for high-voltage, high-speed applications and typically used in switching power supplies, motor control, and other power electronics applications. The package type is fully isolated, helping in thermal management and safety.
Manufacturer
Application
1. Switching Power Supplies: Utilized in converters and inverters for efficient power regulation.
2. Motor Control: Employed in drives and controllers for precise motor operation.
3. LED Lighting: Serves in LED drivers for efficient brightness control.
4. Renewable Energy Systems: Used in solar inverters and other renewable applications for energy conversion.
5. Automotive Electronics: Applied in battery management systems and other vehicle electronic systems.
6. Telecommunications: Used in power amplifiers and signal modulation systems.
Its robustness and efficiency make it suitable for high-performance electronic solutions.