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STP15N80K5
+BOMMOSFET N-CH 800V 14A TO220
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제조업체ST마이크로일렉트로닉스(주)
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제조업체 부품 #STP15N80K5
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데이터시트 STP15N80K5 DataSheet
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사양
| 속성 | 가치 |
| Series | SuperMESH5™ |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 14A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 375mOhm @ 7A, 10V |
| Vgs(th)(Max)@Id | 5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 32 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1100 pF @ 100 V |
| PowerDissipation(Max) | 190W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
| Package/Case | TO-220-3 |
| BaseProductNumber | STP15 |
개요
Description
The STP15N80K5 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. It belongs to STMicroelectronics' 15A series and is characterized by its ability to handle high voltage, with a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 15A at 25°C.
This MOSFET features a low R_DS(on) (on-resistance) value, allowing for minimized power losses during operation, making it suitable for use in power supply circuits, motor drives, and other applications requiring high efficiency. The device operates at high frequencies and is designed to switch quickly, which is essential for modern electronic applications.
Additionally, it comes in a TO-220 package, providing good thermal management, facilitating heat dissipation. The STP15N80K5 is widely used in designs that require robust performance under high voltage and current conditions.
This MOSFET features a low R_DS(on) (on-resistance) value, allowing for minimized power losses during operation, making it suitable for use in power supply circuits, motor drives, and other applications requiring high efficiency. The device operates at high frequencies and is designed to switch quickly, which is essential for modern electronic applications.
Additionally, it comes in a TO-220 package, providing good thermal management, facilitating heat dissipation. The STP15N80K5 is widely used in designs that require robust performance under high voltage and current conditions.
Equivalent
The STP15N80K5 is an N-channel MOSFET with a 15A, 800V rating. Equivalent products include:
1. STP15N80M5 - Similar specifications with improved performance.
2. IRF840 - 8A, 500V, but lower voltage rating.
3. MTP15N80E - Comparable ratings with slight variations in RDS(on).
4. FQA15N80 - 15A, 800V, with similar characteristics.
Always verify specific parameters like RDS(on), gate threshold voltage, and package type for compatibility.
1. STP15N80M5 - Similar specifications with improved performance.
2. IRF840 - 8A, 500V, but lower voltage rating.
3. MTP15N80E - Comparable ratings with slight variations in RDS(on).
4. FQA15N80 - 15A, 800V, with similar characteristics.
Always verify specific parameters like RDS(on), gate threshold voltage, and package type for compatibility.
Features
The STP15N80K5 is an N-channel MOSFET designed for high voltage applications. Its key features include:
1. Voltage Rating: 800V drain-source voltage (V_DS), making it suitable for high-voltage circuits.
2. Continuous Drain Current: Up to 15A, allowing for substantial current handling.
3. On-Resistance (R_DS(on)): Low on-resistance of approximately 0.15Ω at V_GS = 10V, which helps minimize power losses during operation.
4. Gate Threshold Voltage: A threshold voltage (V_GS(th)) ranging from 2V to 4V, ensuring efficient switching.
5. Package Type: Available in a TO-220 package, which aids in heat dissipation.
6. High Speed: Suitable for fast switching applications in power supplies and converters.
7. Thermal Resistance: Provides good thermal stability with a maximum junction temperature of 150°C.
These features make the STP15N80K5 ideal for use in various applications, including industrial power supplies and motor drives.
1. Voltage Rating: 800V drain-source voltage (V_DS), making it suitable for high-voltage circuits.
2. Continuous Drain Current: Up to 15A, allowing for substantial current handling.
3. On-Resistance (R_DS(on)): Low on-resistance of approximately 0.15Ω at V_GS = 10V, which helps minimize power losses during operation.
4. Gate Threshold Voltage: A threshold voltage (V_GS(th)) ranging from 2V to 4V, ensuring efficient switching.
5. Package Type: Available in a TO-220 package, which aids in heat dissipation.
6. High Speed: Suitable for fast switching applications in power supplies and converters.
7. Thermal Resistance: Provides good thermal stability with a maximum junction temperature of 150°C.
These features make the STP15N80K5 ideal for use in various applications, including industrial power supplies and motor drives.
Pinout
The STP15N80K5 is an N-channel MOSFET with a pin count of 3. Its pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the main current flows out when the MOSFET is turned on.
3. Source (S): This terminal is connected to the ground or the low side of the circuit, allowing current to flow from the drain to the source when the device is activated.
The STP15N80K5 is designed for high-voltage applications, rated for a maximum drain-source voltage of 800V and continuous drain current of 15A. It features low on-resistance, making it suitable for power management and switching applications.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the main current flows out when the MOSFET is turned on.
3. Source (S): This terminal is connected to the ground or the low side of the circuit, allowing current to flow from the drain to the source when the device is activated.
The STP15N80K5 is designed for high-voltage applications, rated for a maximum drain-source voltage of 800V and continuous drain current of 15A. It features low on-resistance, making it suitable for power management and switching applications.
Manufacturer
The STP15N80K5 is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics designs, develops, manufactures, and markets a wide range of semiconductor solutions, including analog, digital, and mixed-signal devices. The company serves various markets, including automotive, industrial, personal electronics, and communications. STMicroelectronics is known for its innovative technologies and sustainable practices, offering products that address energy efficiency, connectivity, and IoT applications. The STP15N80K5 itself is a power MOSFET designed for high-voltage applications, showcasing the company’s expertise in power management solutions.
Application
The STP15N80K5 is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its key areas include:
1. Switching Power Supplies: Efficiently managing power conversion in AC-DC and DC-DC converters.
2. Motor Drivers: Controlling motors in industrial applications and home appliances.
3. Inverters: Used in renewable energy systems for converting DC to AC power.
4. LED Lighting: Driving high-power LED arrays.
5. Telecommunications: Power management in communication devices.
Its attributes, such as high voltage rating (800V) and low on-resistance, make it suitable for these applications.
1. Switching Power Supplies: Efficiently managing power conversion in AC-DC and DC-DC converters.
2. Motor Drivers: Controlling motors in industrial applications and home appliances.
3. Inverters: Used in renewable energy systems for converting DC to AC power.
4. LED Lighting: Driving high-power LED arrays.
5. Telecommunications: Power management in communication devices.
Its attributes, such as high voltage rating (800V) and low on-resistance, make it suitable for these applications.
Package
The STP15N80K5 is typically packaged in a TO-220 form factor. This package type allows for efficient heat dissipation and is commonly used for power MOSFETs in various applications.
