STP25NM60N

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STP25NM60N

+BOM

MOSFET N-CH 600V 21A TO220AB

  • 제조업체ST마이크로일렉트로닉스(주)

  • 제조업체 부품 #STP25NM60N

  • 데이터시트 STP25NM60N DataSheet

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사양

속성 가치
Supplier STMicroelectronics
Package Tube
Series MDmesh™ II
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 21A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 160mOhm @ 10.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 84 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 2400 pF @ 50 V
PowerDissipation(Max) 160W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

개요

Description

STP25NM60N is a high-voltage N-channel MOSFET from STMicroelectronics (STPower family). It targets switching power electronics, offering a blocking voltage up to about 600 V and a current rating in the tens of amperes. Built with ST’s trench MOSFET process, it provides relatively low on-resistance and fast switching, and is available in common power packages (surface-mount and through-hole) such as D²PAK and TO‑220 variants. Typical applications include switch-mode power supplies, motor drivers, solar inverters, and industrial controls. Design considerations include appropriate gate-drive voltage, thermal management, and operating-area/SOA limits for high-current operation. For exact electrical parameters (Vds, Id, Rds(on), Qgs, switching characteristics), consult the latest ST datasheet for STP25NM60N and the specific package/revision.

Features

STP25NM60N features (concise):
- N-channel power MOSFET
- Vds: 600 V; Id: ~25 A (continuous)
- Rds(on): around 0.8–1.0 Ω (typical at Vgs = 10 V; max varies by package)
- Gate threshold: ~2–4 V; designed for standard 10 V drive
- Trench MOSFET technology for reliable switching
- Fast switching with low gate charge (easy drive)
- Avalanche rugged with robust SOA for protection against overload
- RoHS-compliant; available in multiple packages (through-hole and surface-mount variants)
- Suitable for offline SMPS, boost/buck converters, inverters, motor drives, and power-management applications
Note: exact Rds(on) and packaging options may vary by lot and package; consult the datasheet for precise numbers.

Pinout

Pin count: 3 pins (G, D, S) with the metal tab also connected to Drain.
Function: STP25NM60N is a 600 V, 25 A N-channel enhancement-mode power MOSFET, used as a high-voltage switch or power pass element. Pinout (typical): Gate = pin 1, Drain = pin 2 (and tab), Source = pin 3.

Manufacturer

- Manufacturer: STMicroelectronics (ST).
- What kind of company: A global, multinational semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products (including power MOSFETs, ICs, MEMS/sensors) for automotive, industrial, consumer, and communications markets.

Application

STP25NM60N is a 600V N-channel MOSFET. Common application areas include:
- Offline AC-DC power supplies and PFC stages
- High-voltage DC-DC converters in telecom/server power modules
- AC motor drives, inverters and servo systems
- Solar and other renewable-energy inverters, battery/UPS systems
- Industrial power electronics and automation equipment
- Grid-tied and standalone UPS/power modules and related power electronics
- General switch-mode power applications requiring high-voltage switching and moderate current.

Package

TO-220AB (through-hole) power MOSFET package.

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