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STP5NK100Z
+BOMMOSFET N-CH 1000V 3.5A TO220AB
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제조업체ST마이크로일렉트로닉스(주)
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제조업체 부품 #STP5NK100Z
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데이터시트 STP5NK100Z DataSheet
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사양
| 속성 | 가치 |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | SuperMESH3™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1000 V |
| Current-ContinuousDrain(Id)@25°C | 3.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 3.7Ohm @ 1.75A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 59 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1154 pF @ 25 V |
| PowerDissipation(Max) | 125W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
개요
Description
Key features of the STP5NK100Z include fast switching speeds, low gate charge, and a robust design that enhances its reliability and performance in demanding environments. It also supports avalanche energy capability, providing protection against voltage spikes. This component comes in a TO-220 package, which is suitable for through-hole mounting, and it has a relatively low thermal resistance, aiding in efficient heat dissipation.
Overall, the STP5NK100Z is a versatile and reliable choice for high voltage and high power applications where efficiency and performance are critical.
Equivalent
1. IXFH5N100 from IXYS
2. IRFBG30 from Infineon Technologies
3. AOTF11N60 from Alpha & Omega Semiconductor
4. FCPF11N60 from ON Semiconductor
Always check the datasheets for detailed comparisons to ensure compatibility in your specific application.
Features
1. Voltage Rating: It has a drain-source voltage (V_DS) of 1000V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of 4A at a temperature of 25°C.
3. R_DS(on): It boasts a low on-resistance of 3.6 ohms, contributing to reduced conduction losses.
4. Technology: Utilizes Zener-Protected STMicroelectronics PowerMESHTM technology, enhancing ruggedness and reliability.
5. Package: Available in a TO-220 package, which is common for through-hole applications and provides efficient heat dissipation.
6. Applications: Ideal for use in high-efficiency power supplies, power converters, and motor control circuits.
7. Switching Performance: Provides fast switching performance due to low gate charge, improving efficiency in high-frequency applications.
These features make the STP5NK100Z a versatile choice for designers needing a robust and efficient N-channel MOSFET for demanding electronic applications.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate controls the current flow between the drain and source.
2. Drain (D): This pin is the output of the MOSFET and is connected to the load. Current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is the return path for the current flowing through the drain. It is typically connected to the ground or negative voltage source in a circuit.
The STP5NK100Z is designed for high-voltage applications with a voltage rating of 1000V and a current rating of 4A, making it suitable for use in switching power supplies and other high-voltage circuits.
Manufacturer
Application
1. Power Supply Units (PSUs): Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
2. Motor Drives: Provides control and regulation in motor drive circuits.
3. Lighting Systems: Utilized in applications such as LED drivers for efficient lighting solutions.
4. Industrial Automation: Employed in various control systems and automation circuits.
5. Telecommunications: Supports power management in telecom infrastructures.
6. Consumer Electronics: Integral in power management for devices like TVs and audio systems.
These applications leverage its high voltage tolerance and efficiency in switching operations.