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STP6N120K3
+BOMMOSFET N-CH 1200V 6A TO220
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제조업체ST마이크로일렉트로닉스(주)
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제조업체 부품 #STP6N120K3
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데이터시트 STP6N120K3 DataSheet
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사양
| 속성 | 가치 |
| Package | Tube |
| Series | SuperMESH3™ |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 6A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2.4Ohm @ 2.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 34 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1050 pF @ 100 V |
| PowerDissipation(Max) | 150W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
개요
Description
The STP6N120K3 is a high-voltage N-channel Power MOSFET designed for use in various electronic applications, particularly in power switching and conversion systems. It is part of STMicroelectronics' MDmesh™ K3 series, which combines advanced technology for improved performance in terms of efficiency and speed.
Key features of the STP6N120K3 include a maximum drain-source voltage (V_DS) of 1200V, a continuous drain current (I_D) of up to 6A, and low on-state resistance, which enhances overall efficiency by minimizing power loss during operation. The MOSFET's fast switching capabilities make it suitable for high-frequency applications, while its robust design ensures reliability in demanding environments.
The device is typically housed in a TO-220 package, providing an efficient thermal path for heat dissipation, which is crucial for maintaining performance under high power conditions. Common applications include power supplies, motor drives, and lighting systems, where high efficiency and reliability are essential.
Key features of the STP6N120K3 include a maximum drain-source voltage (V_DS) of 1200V, a continuous drain current (I_D) of up to 6A, and low on-state resistance, which enhances overall efficiency by minimizing power loss during operation. The MOSFET's fast switching capabilities make it suitable for high-frequency applications, while its robust design ensures reliability in demanding environments.
The device is typically housed in a TO-220 package, providing an efficient thermal path for heat dissipation, which is crucial for maintaining performance under high power conditions. Common applications include power supplies, motor drives, and lighting systems, where high efficiency and reliability are essential.
Equivalent
The STP6N120K3 is an N-channel MOSFET. Equivalent products can include similar MOSFETs with matching voltage, current, and Rds(on) ratings. Some possible equivalents are:
1. IPW60R120P6 from Infineon
2. FDPF12N60NZ from ON Semiconductor
3. IRFBG30 from Vishay
Ensure to verify parameters like maximum drain-source voltage, continuous drain current, and packaging before substituting. Always consult datasheets for compatibility.
1. IPW60R120P6 from Infineon
2. FDPF12N60NZ from ON Semiconductor
3. IRFBG30 from Vishay
Ensure to verify parameters like maximum drain-source voltage, continuous drain current, and packaging before substituting. Always consult datasheets for compatibility.
Features
The STP6N120K3 is a N-channel Power MOSFET designed for high-voltage applications. Key features include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 1200V and a continuous drain current (I_D) capability of 6A.
2. Low On-State Resistance: It features a low R_DS(on), enhancing efficiency by minimizing conduction losses.
3. Fast Switching: The device is optimized for fast switching speeds, which reduces the switching losses and makes it suitable for high-frequency applications.
4. Robust Design: It is designed to handle high power and voltage stress, ensuring reliability in demanding environments.
5. TO-220 Package: The STP6N120K3 comes in a TO-220 package, which provides a good balance of thermal performance and ease of use in various electronic applications.
6. Applications: Commonly used in power supplies, converters, motor control, and other high-voltage electrical systems.
These features make the STP6N120K3 a versatile and efficient component for power management applications.
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 1200V and a continuous drain current (I_D) capability of 6A.
2. Low On-State Resistance: It features a low R_DS(on), enhancing efficiency by minimizing conduction losses.
3. Fast Switching: The device is optimized for fast switching speeds, which reduces the switching losses and makes it suitable for high-frequency applications.
4. Robust Design: It is designed to handle high power and voltage stress, ensuring reliability in demanding environments.
5. TO-220 Package: The STP6N120K3 comes in a TO-220 package, which provides a good balance of thermal performance and ease of use in various electronic applications.
6. Applications: Commonly used in power supplies, converters, motor control, and other high-voltage electrical systems.
These features make the STP6N120K3 a versatile and efficient component for power management applications.
Pinout
The STP6N120K3 is a power MOSFET manufactured by STMicroelectronics. It typically comes in a TO-220 package, which has three pins. The pin count and their functions are as follows:
1. Gate (G): This pin is used to trigger the MOSFET's operation by applying a voltage. It controls the flow of current between the drain and source.
2. Drain (D): This pin is connected to one of the main current-carrying terminals. It is where the current enters the MOSFET from the external circuit.
3. Source (S): This pin is the other main current-carrying terminal, where the current exits the MOSFET into the external circuit.
The STP6N120K3 is designed for high-voltage applications, with a drain-source voltage (V_DS) of up to 1200V. It is used in various power management applications, including switching power supplies and motor controllers, due to its efficiency and reliability in handling high power levels.
1. Gate (G): This pin is used to trigger the MOSFET's operation by applying a voltage. It controls the flow of current between the drain and source.
2. Drain (D): This pin is connected to one of the main current-carrying terminals. It is where the current enters the MOSFET from the external circuit.
3. Source (S): This pin is the other main current-carrying terminal, where the current exits the MOSFET into the external circuit.
The STP6N120K3 is designed for high-voltage applications, with a drain-source voltage (V_DS) of up to 1200V. It is used in various power management applications, including switching power supplies and motor controllers, due to its efficiency and reliability in handling high power levels.
Manufacturer
The STP6N120K3 is manufactured by STMicroelectronics. STMicroelectronics is a multinational corporation that designs, develops, manufactures, and markets a wide range of semiconductor and microelectronic devices, including integrated circuits, discrete devices, and MEMS (Micro-Electro-Mechanical Systems) products. The company serves various industries such as automotive, industrial, personal electronics, and communications. Established in 1987 through the merger of Italian and French semiconductor companies, STMicroelectronics is headquartered in Geneva, Switzerland. It is recognized as one of the leading semiconductor companies globally, known for its innovation and technological advancements in the semiconductor industry.
Application
The STP6N120K3 is an N-channel MOSFET designed for high-voltage applications. Key application areas include:
1. Power Supplies: Used in the design of switched-mode power supplies (SMPS) for improved efficiency and compact size.
2. Motor Control: Suitable for controlling small to medium-sized motors in industrial and consumer applications.
3. Lighting: Employed in electronic ballasts and LED drivers due to its high-voltage handling capabilities.
4. Inverters: Used in inverter circuits for renewable energy systems like solar inverters.
5. Telecommunications: Supports power management tasks in telecom equipment.
Each application benefits from its high-speed switching and low on-resistance characteristics.
1. Power Supplies: Used in the design of switched-mode power supplies (SMPS) for improved efficiency and compact size.
2. Motor Control: Suitable for controlling small to medium-sized motors in industrial and consumer applications.
3. Lighting: Employed in electronic ballasts and LED drivers due to its high-voltage handling capabilities.
4. Inverters: Used in inverter circuits for renewable energy systems like solar inverters.
5. Telecommunications: Supports power management tasks in telecom equipment.
Each application benefits from its high-speed switching and low on-resistance characteristics.
Package
The STP6N120K3 is a silicon N-channel Power MOSFET. It typically comes in a TO-220 package type, which is common for devices that need to handle significant power dissipation while providing ease of mounting and thermal management.
