STP6NK60Z

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STP6NK60Z

+BOM

MOSFET N-CH 600V 6A TO220AB

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  • 데이터시트 STP6NK60Z DataSheet

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사양

속성 가치
Supplier STMicroelectronics
Package Tube
Series SuperMESH™
ProductStatus Not For New Designs
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 1.2Ohm @ 3A, 10V
Vgs(th)(Max)@Id 4.5V @ 100µA
GateCharge(Qg)(Max)@Vgs 46 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 905 pF @ 25 V
PowerDissipation(Max) 110W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

개요

Description

The STP6NK60Z is a high-voltage N-channel MOSFET designed for various electronic applications, particularly in power management and switching. Manufactured by STMicroelectronics, it belongs to the MDmesh™ series, known for its low on-resistance and optimized gate charge, which enhance efficiency and performance. The device features a breakdown voltage of 600V, making it suitable for high-voltage applications, and it can handle a continuous drain current of up to 6A.
Key characteristics include its fast switching capabilities and robust avalanche energy rating, which ensure reliability in demanding environments. The STP6NK60Z is commonly used in applications such as power supplies, lighting, and motor drives.
Encapsulated in a TO-220 package, it offers excellent thermal performance and ease of mounting, contributing to its widespread use in both consumer and industrial applications. Its rugged design and high efficiency make it a preferred choice for engineers looking to optimize power systems while minimizing energy loss.

Equivalent

The STP6NK60Z is an N-channel MOSFET. Equivalent products might include the IRF730, IRF740, and NTE2393, among others. When selecting an equivalent, ensure that the voltage, current, and power ratings match your application's requirements. Always refer to the datasheets for detailed specifications to ensure compatibility.

Features

The STP6NK60Z is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in switching applications. Here are some key features:
1. Voltage Rating: It has a drain-source breakdown voltage of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current is rated at 6A, providing moderate current handling capabilities.
3. RDS(on): The on-resistance is low, typically around 0.75 ohms, which contributes to higher efficiency by reducing power loss during operation.
4. Package: This MOSFET is usually available in TO-220 package, which allows for effective heat dissipation.
5. Fast Switching: It offers fast switching times, which is beneficial in applications where speed is crucial.
6. High Avalanche Ruggedness: Designed to handle high-energy pulses, offering reliable performance during avalanche conditions.
7. Applications: Commonly used in power supplies, converters, and motor control circuits due to its efficiency and reliability.
These features make the STP6NK60Z suitable for a variety of electronic applications, particularly those requiring robust high-voltage switching capabilities.

Pinout

The STP6NK60Z is an N-channel MOSFET manufactured by STMicroelectronics. It features a total of 3 pins. Here are the pin functions:
1. Gate (G): This pin is responsible for turning the MOSFET on or off. It is the control terminal where the input voltage is applied to create an electric field that controls the current flow between the Drain and Source.
2. Drain (D): This is the output terminal through which the main current flows from the Source to the Drain when the MOSFET is turned on by the Gate voltage.
3. Source (S): This terminal is connected to the ground or return path of the circuit and is the source of charge carriers (electrons for N-channel MOSFETs) that flow towards the Drain when the MOSFET is activated.
The STP6NK60Z is typically used for high-efficiency switching applications, as it supports high voltage and current ratings, suitable for use in power supplies, converters, and other power management applications.

Manufacturer

The STP6NK60Z is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products and solutions. The company serves various markets, including automotive, industrial, personal electronics, and communications equipment. STMicroelectronics is known for its innovation in microelectronics and its comprehensive portfolio of semiconductor products, including microcontrollers, sensors, power management devices, and more. Founded in 1987 from the merger of Italian and French semiconductor companies, STMicroelectronics has its headquarters in Geneva, Switzerland, and operates worldwide with a strong focus on sustainability and technological advancement.

Application

The STP6NK60Z is an N-channel MOSFET commonly used in applications requiring high voltage and current handling capabilities. Typical application areas include:
1. Switching Power Supplies: Used in power supply circuits for efficient energy conversion.
2. DC-DC Converters: Employed in voltage regulation and conversion tasks.
3. Motor Drivers: Utilized in controlling motors by switching current flow.
4. Lighting Ballasts: Implemented in fluorescent and LED lamp circuits.
5. Inverters: Used in converting DC to AC power in various systems.
6. Battery Management: Applied in battery protection and charging circuits.
These applications benefit from the MOSFET's high efficiency, fast switching speed, and robustness in handling high power loads.

Package

The STP6NK60Z is packaged in a TO-220 form factor. This is a common package type for power transistors, characterized by its three leads and a metal tab for heat dissipation.

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