이미지는 참조용입니다.
STP6NK60ZFP
+BOMMOSFET N-CH 600V 6A TO220FP
-
제조업체ST마이크로일렉트로닉스(주)
-
제조업체 부품 #STP6NK60ZFP
-
데이터시트 STP6NK60ZFP DataSheet
-
패키지 TO220
-
재고1846
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Package | Tube |
| Series | SuperMESH™ |
| ProductStatus | Not For New Designs |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 6A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 1.2Ohm @ 3A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 46 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 905 pF @ 25 V |
| PowerDissipation(Max) | 30W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
개요
Description
Key specifications:
- Drain-Source Voltage (VDS): 600V
- Continuous Drain Current (ID): 5.6A
- RDS(on) (max): 1.2Ω @ 10V VGS
- Fast switching with low gate drive requirements
- Avalanche ruggedness for reliability
Packaged in TO-220FP (isolated tab), it offers thermal efficiency and electrical isolation. Ideal for SMPS, inverters, and industrial controls where high voltage and efficiency are critical.
For detailed performance curves and application notes, refer to the STMicroelectronics datasheet.
Equivalent
- IRF840 (500V, 8A)
- FQP6N60C (600V, 6A)
- STP6NK60Z (600V, 5.6A, similar specs)
- 2SK3562 (600V, 6A)
- IRFB9N60A (600V, 9A)
Check datasheets for exact compatibility in your circuit.
Features
- Low On-Resistance (RDS(on)): 1.2Ω (typ.) at 10V VGS, reducing conduction losses.
- Fast Switching: Optimized for high-efficiency power applications.
- Avalanche Rugged: High energy capability for reliability in harsh conditions.
- Low Gate Charge (Qg): Enhances switching performance.
- Low Input Capacitance (Ciss): Improves high-frequency operation.
- TO-220FP (Insulated) Package: Provides electrical isolation for easier mounting.
- Applications: SMPS, lighting, motor control, and industrial systems.
Its high voltage rating and low power dissipation make it suitable for energy-efficient designs.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the high-voltage load.
3. Source (S) – Connected to ground/common return.
Key features:
- Low gate charge for efficient switching.
- Avalanche rugged for reliability in inductive loads.
- Zener-protected gate for enhanced ESD protection.
Commonly used in power supplies, motor control, and lighting applications.
