사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, ECOPACK®2 |
| Part Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified(Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 60 µA @ 1200 V |
| Capacitance @ Vr F | 725pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK HV |
개요
Description
The STPSC10H12G2Y-TR is a silicon carbide (SiC) power Schottky diode manufactured by STMicroelectronics. It is designed for high-efficiency power applications, offering benefits such as reduced power loss and enhanced thermal management. This diode is notable for its high breakdown voltage of 1200V and a forward current capability of up to 10A.
Key features include its low forward voltage drop, which minimizes conduction losses, and its fast switching capabilities, which improve efficiency in power conversion systems. The SiC technology ensures high-temperature operation, making it suitable for demanding environments. The device is housed in a TO-220AC package, which is common for power diodes, providing ease of mounting and effective heat dissipation.
Applications for the STPSC10H12G2Y-TR include power factor correction (PFC) circuits, solar inverters, electrical vehicle chargers, and other high-frequency power conversion systems. Its robust performance and reliability make it an optimal choice for designers aiming to improve efficiency and reduce the size of power electronics systems.
Key features include its low forward voltage drop, which minimizes conduction losses, and its fast switching capabilities, which improve efficiency in power conversion systems. The SiC technology ensures high-temperature operation, making it suitable for demanding environments. The device is housed in a TO-220AC package, which is common for power diodes, providing ease of mounting and effective heat dissipation.
Applications for the STPSC10H12G2Y-TR include power factor correction (PFC) circuits, solar inverters, electrical vehicle chargers, and other high-frequency power conversion systems. Its robust performance and reliability make it an optimal choice for designers aiming to improve efficiency and reduce the size of power electronics systems.
Equivalent
The STPSC10H12G2Y-TR is a silicon carbide (SiC) Schottky diode. Equivalent products from other manufacturers include the C3D1P120 from Wolfspeed, the SCT10N120 from ROHM, and the APT10SCD120 from Microsemi. It's important to verify specific electrical characteristics and package compatibility before substituting to ensure they meet the requirements of your application.
Features
The STPSC10H12G2Y-TR is a SiC (Silicon Carbide) Schottky diode from STMicroelectronics, designed for high-efficiency power applications. Key features include:
1. SiC Technology: Offers high thermal performance and efficiency due to low forward voltage drop and reduced switching losses.
2. High Voltage Rating: Rated for 1200V, making it suitable for high-voltage applications.
3. Current Rating: Capable of handling a continuous forward current of 10A.
4. Temperature Range: Operates efficiently over a wide temperature range, enhancing reliability in various environments.
5. High-Speed Switching: Enables faster switching compared to conventional silicon diodes.
6. Low Reverse Recovery Charge (Qrr): Minimizes energy loss during switching, improving overall efficiency.
7. Package Type: Comes in a D²PAK surface-mount package, facilitating compact and efficient PCB design.
8. Robust Construction: Designed for high durability and longevity under demanding conditions.
These features make the STPSC10H12G2Y-TR ideal for applications like power factor correction, solar inverters, and onboard chargers in electric vehicles.
1. SiC Technology: Offers high thermal performance and efficiency due to low forward voltage drop and reduced switching losses.
2. High Voltage Rating: Rated for 1200V, making it suitable for high-voltage applications.
3. Current Rating: Capable of handling a continuous forward current of 10A.
4. Temperature Range: Operates efficiently over a wide temperature range, enhancing reliability in various environments.
5. High-Speed Switching: Enables faster switching compared to conventional silicon diodes.
6. Low Reverse Recovery Charge (Qrr): Minimizes energy loss during switching, improving overall efficiency.
7. Package Type: Comes in a D²PAK surface-mount package, facilitating compact and efficient PCB design.
8. Robust Construction: Designed for high durability and longevity under demanding conditions.
These features make the STPSC10H12G2Y-TR ideal for applications like power factor correction, solar inverters, and onboard chargers in electric vehicles.
Pinout
The STPSC10H12G2Y-TR is a silicon carbide (SiC) power Schottky diode manufactured by STMicroelectronics. It is designed for high efficiency and high-temperature operation. This component is typically used in applications such as power supplies, photovoltaic inverters, and motor drives.
Pin Count:
The STPSC10H12G2Y-TR comes in a D²PAK package, which is a surface-mount package. It typically features two main pins for connection: an anode and a cathode.
Function:
The primary function of the STPSC10H12G2Y-TR is to serve as a rectifying diode, allowing current to flow in one direction while blocking it in the opposite direction. It is optimized for high surge current capability and low forward voltage drop, leading to reduced power losses and improved efficiency in circuits. Its silicon carbide construction enables it to operate at higher voltages and temperatures compared to traditional silicon diodes, making it suitable for demanding power applications.
Pin Count:
The STPSC10H12G2Y-TR comes in a D²PAK package, which is a surface-mount package. It typically features two main pins for connection: an anode and a cathode.
Function:
The primary function of the STPSC10H12G2Y-TR is to serve as a rectifying diode, allowing current to flow in one direction while blocking it in the opposite direction. It is optimized for high surge current capability and low forward voltage drop, leading to reduced power losses and improved efficiency in circuits. Its silicon carbide construction enables it to operate at higher voltages and temperatures compared to traditional silicon diodes, making it suitable for demanding power applications.
Manufacturer
The STPSC10H12G2Y-TR is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products, including integrated circuits (ICs) and discrete devices. It serves a variety of markets, including automotive, industrial, personal electronics, and communications equipment. The company's products are used in applications such as sensors, power management systems, microcontrollers, and digital and analog ICs.
STMicroelectronics is known for its innovation and commitment to sustainability, focusing on energy efficiency and reducing environmental impacts. It operates in a high-tech industry and is involved in the research and development of cutting-edge technologies that power modern electronics and systems. The company has a diverse product portfolio catering to various sectors and helps drive advancements in technology with its semiconductor solutions.
STMicroelectronics is known for its innovation and commitment to sustainability, focusing on energy efficiency and reducing environmental impacts. It operates in a high-tech industry and is involved in the research and development of cutting-edge technologies that power modern electronics and systems. The company has a diverse product portfolio catering to various sectors and helps drive advancements in technology with its semiconductor solutions.
Application
The STPSC10H12G2Y-TR is a silicon carbide (SiC) Schottky diode. Its application areas include power factor correction (PFC) in power supplies, solar inverters, uninterruptible power supplies (UPS), motor drives, and electric vehicle (EV) charging systems. The diode's high efficiency, fast switching, and high-temperature performance make it suitable for applications demanding reduced power losses and improved thermal management. Additionally, its robustness and reliability are advantageous in industrial and renewable energy applications where efficiency and durability are critical.
Package
The STPSC10H12G2Y-TR is a silicon carbide (SiC) Schottky diode in a TO-220AB package type. This package is commonly used for high-power components and provides efficient thermal performance, making it suitable for applications requiring high efficiency and reliability.
